DE69015511D1 - Verfahren und Vorrichtung zum Verbinden von Halbleitersubstraten. - Google Patents
Verfahren und Vorrichtung zum Verbinden von Halbleitersubstraten.Info
- Publication number
- DE69015511D1 DE69015511D1 DE69015511T DE69015511T DE69015511D1 DE 69015511 D1 DE69015511 D1 DE 69015511D1 DE 69015511 T DE69015511 T DE 69015511T DE 69015511 T DE69015511 T DE 69015511T DE 69015511 D1 DE69015511 D1 DE 69015511D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor substrates
- connecting semiconductor
- substrates
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1221337A JPH0744135B2 (ja) | 1989-08-28 | 1989-08-28 | 半導体基板の接着方法及び接着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69015511D1 true DE69015511D1 (de) | 1995-02-09 |
DE69015511T2 DE69015511T2 (de) | 1995-05-24 |
Family
ID=16765225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69015511T Expired - Lifetime DE69015511T2 (de) | 1989-08-28 | 1990-08-28 | Verfahren und Vorrichtung zum Verbinden von Halbleitersubstraten. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5129827A (de) |
EP (1) | EP0415340B1 (de) |
JP (1) | JPH0744135B2 (de) |
KR (1) | KR940009993B1 (de) |
DE (1) | DE69015511T2 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE36890E (en) * | 1990-07-31 | 2000-10-03 | Motorola, Inc. | Gradient chuck method for wafer bonding employing a convex pressure |
KR100289348B1 (ko) * | 1992-05-25 | 2001-12-28 | 이데이 노부유끼 | 절연기판실리콘반도체장치와그제조방법 |
US5300175A (en) * | 1993-01-04 | 1994-04-05 | Motorola, Inc. | Method for mounting a wafer to a submount |
JP3321882B2 (ja) * | 1993-02-28 | 2002-09-09 | ソニー株式会社 | 基板はり合わせ方法 |
JP2723787B2 (ja) * | 1993-08-20 | 1998-03-09 | 信越半導体株式会社 | 結合型基板の製造方法 |
US5401670A (en) * | 1993-09-15 | 1995-03-28 | Yen; Yung-Chau | Technique to manufacture a SOI wafer and its applications in integrated circuits manufacturing |
US6116316A (en) * | 1996-05-13 | 2000-09-12 | Toolex Alpha Ab | Device for bending a flat, round disc element |
JP3720515B2 (ja) * | 1997-03-13 | 2005-11-30 | キヤノン株式会社 | 基板処理装置及びその方法並びに基板の製造方法 |
JPH1174164A (ja) | 1997-08-27 | 1999-03-16 | Canon Inc | 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法 |
US6106657A (en) * | 1998-05-19 | 2000-08-22 | First Light Technology, Inc. | System and method for dispensing a resin between substrates of a bonded storage disk |
FR2802340B1 (fr) * | 1999-12-13 | 2003-09-05 | Commissariat Energie Atomique | Structure comportant des cellules photovoltaiques et procede de realisation |
DE10030431A1 (de) * | 2000-06-21 | 2002-01-10 | Karl Suess Kg Praez Sgeraete F | Verfahren und Vorrichtung zum Reinigen und/oder Bonden von Substraten |
KR20020032042A (ko) * | 2000-10-25 | 2002-05-03 | 최우범 | 기판 접합장치의 조절형 원뿔탐침 스페이서 |
GB2375733B (en) * | 2001-01-15 | 2004-11-03 | Lintec Corp | Laminating apparatus and laminating method |
US6635941B2 (en) * | 2001-03-21 | 2003-10-21 | Canon Kabushiki Kaisha | Structure of semiconductor device with improved reliability |
DE10140133A1 (de) * | 2001-08-16 | 2003-03-13 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Herstellen einer klebenden Verbindung zwischen einer Halbleiterscheibe und einer Trägerplatte |
TWI283906B (en) * | 2001-12-21 | 2007-07-11 | Esec Trading Sa | Pick-up tool for mounting semiconductor chips |
JP4233802B2 (ja) * | 2002-04-26 | 2009-03-04 | 東レエンジニアリング株式会社 | 実装方法および実装装置 |
FR2848337B1 (fr) * | 2002-12-09 | 2005-09-09 | Commissariat Energie Atomique | Procede de realisation d'une structure complexe par assemblage de structures contraintes |
JP4777681B2 (ja) * | 2005-04-08 | 2011-09-21 | Okiセミコンダクタ株式会社 | 陽極接合装置、陽極接合方法及び加速度センサの製造方法 |
JP4671841B2 (ja) * | 2005-11-09 | 2011-04-20 | パナソニック株式会社 | 対象物間の脱ガス方法および脱ガス装置 |
JP4958147B2 (ja) * | 2006-10-18 | 2012-06-20 | Hoya株式会社 | 露光用反射型マスクブランク及び露光用反射型マスク、多層反射膜付き基板、並びに半導体装置の製造方法 |
US8037918B2 (en) * | 2006-12-04 | 2011-10-18 | Stats Chippac, Inc. | Pick-up heads and systems for die bonding and related applications |
JP5303883B2 (ja) * | 2007-09-04 | 2013-10-02 | 株式会社Sumco | 貼り合わせウェーハの製造装置及び製造方法 |
KR101562021B1 (ko) * | 2009-08-11 | 2015-10-20 | 삼성전자주식회사 | 반도체 칩 부착 장치 및 반도체 칩 부착 방법 |
US8334191B2 (en) * | 2009-12-11 | 2012-12-18 | Twin Creeks Technology, Inc. | Two-chamber system and method for serial bonding and exfoliation of multiple workpieces |
CN102947923B (zh) * | 2010-06-02 | 2015-11-25 | 库卡系统有限责任公司 | 制造装置和方法 |
JP2012004296A (ja) * | 2010-06-16 | 2012-01-05 | Sumitomo Electric Ind Ltd | 複合基板の製造方法および複合基板 |
FR2965974B1 (fr) | 2010-10-12 | 2013-11-29 | Soitec Silicon On Insulator | Procédé de collage moléculaire de substrats en silicium et en verre |
TWI564982B (zh) * | 2011-04-26 | 2017-01-01 | 尼康股份有限公司 | A substrate holding device, a substrate bonding device, a substrate holding method, a substrate bonding method, a laminated semiconductor device, and a laminated substrate |
KR102350216B1 (ko) * | 2011-08-12 | 2022-01-11 | 에베 그룹 에. 탈너 게엠베하 | 기판의 접합을 위한 장치 및 방법 |
JP2013165219A (ja) * | 2012-02-13 | 2013-08-22 | Toshiba Corp | ダイボンディング装置、コレット、および、ダイボンディング方法 |
US20130312907A1 (en) * | 2012-05-23 | 2013-11-28 | Lg Display Co., Ltd. | Substrate-bonding apparatus for display device and method for manufacturing bonded substrate |
KR101990854B1 (ko) * | 2012-05-23 | 2019-06-19 | 엘지디스플레이 주식회사 | 디스플레이장치용 합착장치 및 합착기판 제조방법 |
KR101932124B1 (ko) * | 2013-04-03 | 2018-12-26 | 삼성디스플레이 주식회사 | 지그 조립체, 라미네이트 장치 및 이를 이용한 라미네이트 방법 |
CN109449082B (zh) * | 2013-05-29 | 2023-06-02 | Ev 集团 E·索尔纳有限责任公司 | 用以接合衬底的装置及方法 |
US9837291B2 (en) * | 2014-01-24 | 2017-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer processing method and apparatus |
US9576827B2 (en) | 2014-06-06 | 2017-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for wafer level bonding |
JP6177739B2 (ja) * | 2014-08-07 | 2017-08-09 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
US10446728B2 (en) * | 2014-10-31 | 2019-10-15 | eLux, Inc. | Pick-and remove system and method for emissive display repair |
US9490158B2 (en) | 2015-01-08 | 2016-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond chuck, methods of bonding, and tool including bond chuck |
JP6407803B2 (ja) * | 2015-06-16 | 2018-10-17 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
JP6616181B2 (ja) * | 2015-12-25 | 2019-12-04 | 東京エレクトロン株式会社 | 接合装置 |
JP6685154B2 (ja) * | 2016-03-14 | 2020-04-22 | 東京エレクトロン株式会社 | 接合装置および接合方法 |
US10991609B2 (en) * | 2016-08-12 | 2021-04-27 | Ev Group E. Thallner Gmbh | Method and substrate holder for the controlled bonding of substrates |
KR20200133634A (ko) | 2019-05-20 | 2020-11-30 | 삼성전자주식회사 | 기판 본딩 장치 및 이를 이용한 반도체 소자 제조 방법 |
EP4055624B1 (de) * | 2019-11-08 | 2023-09-27 | EV Group E. Thallner GmbH | Vorrichtung und verfahren zum verbinden von substraten |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3417459A (en) * | 1965-05-06 | 1968-12-24 | Mallory & Co Inc P R | Bonding electrically conductive metals to insulators |
JPH0691006B2 (ja) * | 1984-05-10 | 1994-11-14 | 株式会社東芝 | 半導体ウエハの接合方法 |
US4752180A (en) * | 1985-02-14 | 1988-06-21 | Kabushiki Kaisha Toshiba | Method and apparatus for handling semiconductor wafers |
JPS62158905A (ja) * | 1985-12-28 | 1987-07-14 | Tokyo Gas Co Ltd | コ−クス炉に於ける排ガス再循環切換燃焼方法 |
DE3670178D1 (de) * | 1986-08-13 | 1990-05-10 | Toshiba Kawasaki Kk | Apparat zum zusammenfuegen von halbleiterscheiben. |
US4830984A (en) * | 1987-08-19 | 1989-05-16 | Texas Instruments Incorporated | Method for heteroepitaxial growth using tensioning layer on rear substrate surface |
JPH0256918A (ja) * | 1988-05-24 | 1990-02-26 | Nippon Denso Co Ltd | 半導体ウェハの直接接合方法 |
US4939101A (en) * | 1988-09-06 | 1990-07-03 | General Electric Company | Method of making direct bonded wafers having a void free interface |
-
1989
- 1989-08-28 JP JP1221337A patent/JPH0744135B2/ja not_active Expired - Lifetime
-
1990
- 1990-08-24 US US07/571,980 patent/US5129827A/en not_active Expired - Lifetime
- 1990-08-28 EP EP90116463A patent/EP0415340B1/de not_active Expired - Lifetime
- 1990-08-28 KR KR90013287A patent/KR940009993B1/ko not_active IP Right Cessation
- 1990-08-28 DE DE69015511T patent/DE69015511T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0384919A (ja) | 1991-04-10 |
KR910005382A (ko) | 1991-03-30 |
DE69015511T2 (de) | 1995-05-24 |
US5129827A (en) | 1992-07-14 |
EP0415340A1 (de) | 1991-03-06 |
JPH0744135B2 (ja) | 1995-05-15 |
KR940009993B1 (en) | 1994-10-19 |
EP0415340B1 (de) | 1994-12-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |