KR910005382A - 반도체기판의 접착방법 및 접착장치 - Google Patents
반도체기판의 접착방법 및 접착장치 Download PDFInfo
- Publication number
- KR910005382A KR910005382A KR1019900013287A KR900013287A KR910005382A KR 910005382 A KR910005382 A KR 910005382A KR 1019900013287 A KR1019900013287 A KR 1019900013287A KR 900013287 A KR900013287 A KR 900013287A KR 910005382 A KR910005382 A KR 910005382A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor substrate
- mirror
- semiconductor
- holding
- bonding
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 실시예에 따른 반도체기판 접착용 장치의 개략을 나타낸 단면도.
Claims (2)
- 경면연마된 2장의 반도체기판(23,23,25)을 청정한 대기중에서 접착시키는데 있어서, 적어도 한쪽 반도체기판의 경면 연마면을 휘어지게 해서 중앙부분에 형성한 볼록한 부분과 다른쪽 반도체기판의 경면연마면의 중앙부분을 접촉시킨후에 양반도체기판을 둘러싼 대기를 감압상태로 하는 것을 특징으로 하는 반도체기판의 접착방법.
- 대기중에 배치된 반도체기판(23)의 경면연마면을 휘어지게 해서 중앙부분이 볼록한 상태로 되도록 유지하는 제1유지기구(27,41)와 다른쪽 반도체기판(24,25)을 유지하는 제2유지기구(27,41), 볼록한 상태로 변형시킨 반도체기판의 경면연마면의 중앙부분에 다른 반도체기판의 경면연마면의 중앙부분을 접촉시키는 기구, 제1 및 제2 유지기구(26 및 24,25)에 부착되어 일정한 분위기를 형성하는 덮개부(38,39), 이 덮개부(38,39)에 설치된 배기구멍(32,33) 및 이 배기구멍(32,33)에 연결된 감압기구가 구비된 것을 특징으로 하는 반도체 기판의 접착장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1221337A JPH0744135B2 (ja) | 1989-08-28 | 1989-08-28 | 半導体基板の接着方法及び接着装置 |
JP1-221337 | 1989-08-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910005382A true KR910005382A (ko) | 1991-03-30 |
KR940009993B1 KR940009993B1 (en) | 1994-10-19 |
Family
ID=16765225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR90013287A KR940009993B1 (en) | 1989-08-28 | 1990-08-28 | Method and apparatus for bonding semiconductor substrates |
Country Status (5)
Country | Link |
---|---|
US (1) | US5129827A (ko) |
EP (1) | EP0415340B1 (ko) |
JP (1) | JPH0744135B2 (ko) |
KR (1) | KR940009993B1 (ko) |
DE (1) | DE69015511T2 (ko) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE36890E (en) * | 1990-07-31 | 2000-10-03 | Motorola, Inc. | Gradient chuck method for wafer bonding employing a convex pressure |
US5478782A (en) * | 1992-05-25 | 1995-12-26 | Sony Corporation | Method bonding for production of SOI transistor device |
US5300175A (en) * | 1993-01-04 | 1994-04-05 | Motorola, Inc. | Method for mounting a wafer to a submount |
JP3321882B2 (ja) * | 1993-02-28 | 2002-09-09 | ソニー株式会社 | 基板はり合わせ方法 |
JP2723787B2 (ja) * | 1993-08-20 | 1998-03-09 | 信越半導体株式会社 | 結合型基板の製造方法 |
US5401670A (en) * | 1993-09-15 | 1995-03-28 | Yen; Yung-Chau | Technique to manufacture a SOI wafer and its applications in integrated circuits manufacturing |
US6116316A (en) * | 1996-05-13 | 2000-09-12 | Toolex Alpha Ab | Device for bending a flat, round disc element |
JP3720515B2 (ja) * | 1997-03-13 | 2005-11-30 | キヤノン株式会社 | 基板処理装置及びその方法並びに基板の製造方法 |
JPH1174164A (ja) | 1997-08-27 | 1999-03-16 | Canon Inc | 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法 |
US6106657A (en) * | 1998-05-19 | 2000-08-22 | First Light Technology, Inc. | System and method for dispensing a resin between substrates of a bonded storage disk |
FR2802340B1 (fr) * | 1999-12-13 | 2003-09-05 | Commissariat Energie Atomique | Structure comportant des cellules photovoltaiques et procede de realisation |
DE10030431A1 (de) * | 2000-06-21 | 2002-01-10 | Karl Suess Kg Praez Sgeraete F | Verfahren und Vorrichtung zum Reinigen und/oder Bonden von Substraten |
KR20020032042A (ko) * | 2000-10-25 | 2002-05-03 | 최우범 | 기판 접합장치의 조절형 원뿔탐침 스페이서 |
WO2002056352A1 (fr) * | 2001-01-15 | 2002-07-18 | Lintec Corporation | Appareil d'assemblage et procede d'assemblage |
US6635941B2 (en) * | 2001-03-21 | 2003-10-21 | Canon Kabushiki Kaisha | Structure of semiconductor device with improved reliability |
DE10140133A1 (de) * | 2001-08-16 | 2003-03-13 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Herstellen einer klebenden Verbindung zwischen einer Halbleiterscheibe und einer Trägerplatte |
TWI283906B (en) * | 2001-12-21 | 2007-07-11 | Esec Trading Sa | Pick-up tool for mounting semiconductor chips |
JP4233802B2 (ja) * | 2002-04-26 | 2009-03-04 | 東レエンジニアリング株式会社 | 実装方法および実装装置 |
FR2848337B1 (fr) * | 2002-12-09 | 2005-09-09 | Commissariat Energie Atomique | Procede de realisation d'une structure complexe par assemblage de structures contraintes |
JP4777681B2 (ja) * | 2005-04-08 | 2011-09-21 | Okiセミコンダクタ株式会社 | 陽極接合装置、陽極接合方法及び加速度センサの製造方法 |
JP4671841B2 (ja) * | 2005-11-09 | 2011-04-20 | パナソニック株式会社 | 対象物間の脱ガス方法および脱ガス装置 |
JP4958147B2 (ja) * | 2006-10-18 | 2012-06-20 | Hoya株式会社 | 露光用反射型マスクブランク及び露光用反射型マスク、多層反射膜付き基板、並びに半導体装置の製造方法 |
US8037918B2 (en) * | 2006-12-04 | 2011-10-18 | Stats Chippac, Inc. | Pick-up heads and systems for die bonding and related applications |
JP5303883B2 (ja) * | 2007-09-04 | 2013-10-02 | 株式会社Sumco | 貼り合わせウェーハの製造装置及び製造方法 |
KR101562021B1 (ko) * | 2009-08-11 | 2015-10-20 | 삼성전자주식회사 | 반도체 칩 부착 장치 및 반도체 칩 부착 방법 |
US8334191B2 (en) * | 2009-12-11 | 2012-12-18 | Twin Creeks Technology, Inc. | Two-chamber system and method for serial bonding and exfoliation of multiple workpieces |
DE112011101868A5 (de) * | 2010-06-02 | 2013-04-18 | Dirk Albrecht | Fertigungseinrichtung und Verfahren |
JP2012004296A (ja) * | 2010-06-16 | 2012-01-05 | Sumitomo Electric Ind Ltd | 複合基板の製造方法および複合基板 |
FR2965974B1 (fr) | 2010-10-12 | 2013-11-29 | Soitec Silicon On Insulator | Procédé de collage moléculaire de substrats en silicium et en verre |
EP2704182B1 (en) * | 2011-04-26 | 2018-01-03 | Nikon Corporation | Substrate bonding apparatus and substrate bonding method |
US9613840B2 (en) * | 2011-08-12 | 2017-04-04 | Ev Group E. Thallner Gmbh | Apparatus and method for bonding substrates |
JP2013165219A (ja) * | 2012-02-13 | 2013-08-22 | Toshiba Corp | ダイボンディング装置、コレット、および、ダイボンディング方法 |
KR101990854B1 (ko) * | 2012-05-23 | 2019-06-19 | 엘지디스플레이 주식회사 | 디스플레이장치용 합착장치 및 합착기판 제조방법 |
US20130312907A1 (en) * | 2012-05-23 | 2013-11-28 | Lg Display Co., Ltd. | Substrate-bonding apparatus for display device and method for manufacturing bonded substrate |
KR101932124B1 (ko) * | 2013-04-03 | 2018-12-26 | 삼성디스플레이 주식회사 | 지그 조립체, 라미네이트 장치 및 이를 이용한 라미네이트 방법 |
WO2014191033A1 (de) * | 2013-05-29 | 2014-12-04 | Ev Group E. Thallner Gmbh | Vorrichtung und verfahren zum bonden von substraten |
US9837291B2 (en) * | 2014-01-24 | 2017-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer processing method and apparatus |
US9576827B2 (en) | 2014-06-06 | 2017-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for wafer level bonding |
JP6177739B2 (ja) * | 2014-08-07 | 2017-08-09 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
US10446728B2 (en) * | 2014-10-31 | 2019-10-15 | eLux, Inc. | Pick-and remove system and method for emissive display repair |
US9490158B2 (en) | 2015-01-08 | 2016-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond chuck, methods of bonding, and tool including bond chuck |
JP6407803B2 (ja) * | 2015-06-16 | 2018-10-17 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
JP6616181B2 (ja) * | 2015-12-25 | 2019-12-04 | 東京エレクトロン株式会社 | 接合装置 |
JP6685154B2 (ja) * | 2016-03-14 | 2020-04-22 | 東京エレクトロン株式会社 | 接合装置および接合方法 |
US10991609B2 (en) * | 2016-08-12 | 2021-04-27 | Ev Group E. Thallner Gmbh | Method and substrate holder for the controlled bonding of substrates |
KR20200133634A (ko) | 2019-05-20 | 2020-11-30 | 삼성전자주식회사 | 기판 본딩 장치 및 이를 이용한 반도체 소자 제조 방법 |
EP4055624B1 (de) * | 2019-11-08 | 2023-09-27 | EV Group E. Thallner GmbH | Vorrichtung und verfahren zum verbinden von substraten |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3417459A (en) * | 1965-05-06 | 1968-12-24 | Mallory & Co Inc P R | Bonding electrically conductive metals to insulators |
JPH0691006B2 (ja) * | 1984-05-10 | 1994-11-14 | 株式会社東芝 | 半導体ウエハの接合方法 |
EP0256150B1 (en) * | 1986-08-13 | 1990-04-04 | Kabushiki Kaisha Toshiba | Apparatus for bonding semiconductor wafers |
US4752180A (en) * | 1985-02-14 | 1988-06-21 | Kabushiki Kaisha Toshiba | Method and apparatus for handling semiconductor wafers |
JPS62158905A (ja) * | 1985-12-28 | 1987-07-14 | Tokyo Gas Co Ltd | コ−クス炉に於ける排ガス再循環切換燃焼方法 |
US4830984A (en) * | 1987-08-19 | 1989-05-16 | Texas Instruments Incorporated | Method for heteroepitaxial growth using tensioning layer on rear substrate surface |
JPH0256918A (ja) * | 1988-05-24 | 1990-02-26 | Nippon Denso Co Ltd | 半導体ウェハの直接接合方法 |
US4939101A (en) * | 1988-09-06 | 1990-07-03 | General Electric Company | Method of making direct bonded wafers having a void free interface |
-
1989
- 1989-08-28 JP JP1221337A patent/JPH0744135B2/ja not_active Expired - Lifetime
-
1990
- 1990-08-24 US US07/571,980 patent/US5129827A/en not_active Expired - Lifetime
- 1990-08-28 DE DE69015511T patent/DE69015511T2/de not_active Expired - Lifetime
- 1990-08-28 EP EP90116463A patent/EP0415340B1/en not_active Expired - Lifetime
- 1990-08-28 KR KR90013287A patent/KR940009993B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69015511T2 (de) | 1995-05-24 |
JPH0384919A (ja) | 1991-04-10 |
KR940009993B1 (en) | 1994-10-19 |
DE69015511D1 (de) | 1995-02-09 |
US5129827A (en) | 1992-07-14 |
EP0415340A1 (en) | 1991-03-06 |
EP0415340B1 (en) | 1994-12-28 |
JPH0744135B2 (ja) | 1995-05-15 |
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