DE3854541D1 - Verfahren und Vorrichtung zur Behandlung eines Materials durch Plasma. - Google Patents

Verfahren und Vorrichtung zur Behandlung eines Materials durch Plasma.

Info

Publication number
DE3854541D1
DE3854541D1 DE3854541T DE3854541T DE3854541D1 DE 3854541 D1 DE3854541 D1 DE 3854541D1 DE 3854541 T DE3854541 T DE 3854541T DE 3854541 T DE3854541 T DE 3854541T DE 3854541 D1 DE3854541 D1 DE 3854541D1
Authority
DE
Germany
Prior art keywords
plasma
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3854541T
Other languages
English (en)
Other versions
DE3854541T2 (de
Inventor
Hiroshi Saito
Yasumichi Suzuki
Shunji Sasabe
Kazuhiro Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62178997A external-priority patent/JPS6423536A/ja
Priority claimed from JP19820087A external-priority patent/JPH0831443B2/ja
Priority claimed from JP62279239A external-priority patent/JPH0819529B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3854541D1 publication Critical patent/DE3854541D1/de
Application granted granted Critical
Publication of DE3854541T2 publication Critical patent/DE3854541T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
DE3854541T 1987-07-20 1988-07-20 Verfahren und Vorrichtung zur Behandlung eines Materials durch Plasma. Expired - Fee Related DE3854541T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62178997A JPS6423536A (en) 1987-07-20 1987-07-20 Sputter-etching device
JP19820087A JPH0831443B2 (ja) 1987-08-10 1987-08-10 プラズマ処理装置
JP62279239A JPH0819529B2 (ja) 1987-11-06 1987-11-06 プラズマ処理装置

Publications (2)

Publication Number Publication Date
DE3854541D1 true DE3854541D1 (de) 1995-11-09
DE3854541T2 DE3854541T2 (de) 1996-03-14

Family

ID=27324662

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854541T Expired - Fee Related DE3854541T2 (de) 1987-07-20 1988-07-20 Verfahren und Vorrichtung zur Behandlung eines Materials durch Plasma.

Country Status (4)

Country Link
US (1) US5021114A (de)
EP (1) EP0300447B1 (de)
KR (1) KR920002864B1 (de)
DE (1) DE3854541T2 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2993675B2 (ja) * 1989-02-08 1999-12-20 株式会社日立製作所 プラズマ処理方法及びその装置
FR2646557B1 (fr) * 1989-04-28 1997-07-18 Canon Kk Procede pour former un film de semiconducteur polycristallin sur un substrat isolant
DE3924916A1 (de) * 1989-07-27 1991-01-31 Technics Plasma Gmbh Verfahren und vorrichtung zur behandlung eines perforationen aufweisenden objektes mit hochfrequenzentladungsprodukten eines plasmas
JP2602336B2 (ja) * 1989-11-29 1997-04-23 株式会社日立製作所 プラズマ処理装置
JPH088243B2 (ja) * 1989-12-13 1996-01-29 三菱電機株式会社 表面クリーニング装置及びその方法
EP0478283B1 (de) * 1990-09-26 1996-12-27 Hitachi, Ltd. Verfahren und Gerät zur Bearbeitung mittels Mikrowellenplasma
JP3020580B2 (ja) * 1990-09-28 2000-03-15 株式会社日立製作所 マイクロ波プラズマ処理装置
DE4037091C2 (de) * 1990-11-22 1996-06-20 Leybold Ag Vorrichtung für die Erzeugung eines homogenen Mikrowellenfeldes
DE4310258A1 (de) * 1993-03-30 1994-10-06 Bosch Gmbh Robert Vorrichtung zur Herstellung einer Plasmapolymerschutzschicht auf Werkstücken, insbesondere Scheinwerferreflektoren
US5556475A (en) * 1993-06-04 1996-09-17 Applied Science And Technology, Inc. Microwave plasma reactor
US5518547A (en) * 1993-12-23 1996-05-21 International Business Machines Corporation Method and apparatus for reducing particulates in a plasma tool through steady state flows
JPH07245193A (ja) * 1994-03-02 1995-09-19 Nissin Electric Co Ltd プラズマ発生装置及びプラズマ処理装置
EP0774772A1 (de) * 1995-11-17 1997-05-21 Applied Materials, Inc. Verfahren zum physikalischen Ätzen von elektrisch leitenden Siliziumoberflächen
JP3555797B2 (ja) * 1996-03-11 2004-08-18 富士写真フイルム株式会社 成膜装置および成膜方法
US6322661B1 (en) * 1999-11-15 2001-11-27 Lam Research Corporation Method and apparatus for controlling the volume of a plasma
AU1606101A (en) * 1999-11-15 2001-05-30 Lam Research Corporation Materials and gas chemistries for processing systems
US6341574B1 (en) 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US8114245B2 (en) * 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
JP3996771B2 (ja) * 2000-01-12 2007-10-24 東京エレクトロン株式会社 真空処理装置及び真空処理方法
JP2001203099A (ja) * 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
DE10018143C5 (de) * 2000-04-12 2012-09-06 Oerlikon Trading Ag, Trübbach DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems
US6676760B2 (en) 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
NL1019781C2 (nl) * 2002-01-18 2003-07-21 Tno Deklaag alsmede werkwijzen en inrichtingen voor de vervaardiging daarvan.
FR2838020B1 (fr) * 2002-03-28 2004-07-02 Centre Nat Rech Scient Dispositif de confinement de plasma
KR20030085769A (ko) * 2002-05-01 2003-11-07 주식회사 피에스티 화학기상 증착장치 및 증착방법
WO2004006321A1 (ja) * 2002-07-08 2004-01-15 Kansai Technology Licensing Organization Co.,Ltd. シリコン窒化膜の形成方法および形成装置
CN100413021C (zh) * 2005-12-02 2008-08-20 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体反应室温控系统在线故障检测装置及其方法
KR101501426B1 (ko) * 2006-06-02 2015-03-11 어플라이드 머티어리얼스, 인코포레이티드 차압 측정들에 의한 가스 유동 제어
RU2326006C1 (ru) 2006-12-21 2008-06-10 Федеральное Государственное Унитарное Предприятие "Гознак" (Фгуп "Гознак") Защитный элемент (варианты), способ его изготовления, защищенный от подделки материал и ценный документ
US8268116B2 (en) 2007-06-14 2012-09-18 Lam Research Corporation Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber
MX345403B (es) 2009-05-13 2017-01-30 Sio2 Medical Products Inc Revestimiento por pecvd utilizando un precursor organosilícico.
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
JP5774778B2 (ja) * 2011-06-09 2015-09-09 コリア ベーシック サイエンス インスティテュート プラズマ発生源、スパッタリング装置、中性粒子ビーム発生源及び薄膜蒸着システム
EP2776603B1 (de) 2011-11-11 2019-03-06 SiO2 Medical Products, Inc. Passivierungs-, ph-schutz- oder schmierbeschichtung für arzneimittelverpackung, beschichtungsverfahren und vorrichtung
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
CA2887352A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
EP2914762B1 (de) 2012-11-01 2020-05-13 SiO2 Medical Products, Inc. Verfahren zur inspektion einer beschichtung
US9903782B2 (en) 2012-11-16 2018-02-27 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
WO2014085348A2 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US9662450B2 (en) 2013-03-01 2017-05-30 Sio2 Medical Products, Inc. Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
KR102472240B1 (ko) 2013-03-11 2022-11-30 에스아이오2 메디컬 프로덕츠, 인크. 코팅된 패키징
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
WO2014144926A1 (en) 2013-03-15 2014-09-18 Sio2 Medical Products, Inc. Coating method
US11066745B2 (en) 2014-03-28 2021-07-20 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
US11077233B2 (en) 2015-08-18 2021-08-03 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate

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FR2402301A1 (fr) * 1977-09-02 1979-03-30 Commissariat Energie Atomique Appareil de micro-usinage par erosion ionique utilisant une source de plasma
JPS5726441A (en) * 1980-07-23 1982-02-12 Hitachi Ltd Cvd method and device therefor
US4521286A (en) * 1983-03-09 1985-06-04 Unisearch Limited Hollow cathode sputter etcher
JPS6130036A (ja) * 1984-07-23 1986-02-12 Fujitsu Ltd マイクロ波プラズマ処理装置
DE3500328A1 (de) * 1985-01-07 1986-07-10 Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa Zerstaeubungsaetzvorrichtung
US4588490A (en) * 1985-05-22 1986-05-13 International Business Machines Corporation Hollow cathode enhanced magnetron sputter device
FR2583250B1 (fr) * 1985-06-07 1989-06-30 France Etat Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique
EP0264913B1 (de) * 1986-10-20 1994-06-22 Hitachi, Ltd. Plasmabearbeitungsgerät
JPS63210275A (ja) * 1987-02-24 1988-08-31 Semiconductor Energy Lab Co Ltd プラズマ反応装置内を清浄にする方法
JPH0672306B2 (ja) * 1987-04-27 1994-09-14 株式会社半導体エネルギー研究所 プラズマ処理装置およびプラズマ処理方法
US4819118A (en) * 1988-06-02 1989-04-04 Westinghouse Electric Corp. Electromagnetic contactor tandem control system for thermal protection of a bidirectional motor drive

Also Published As

Publication number Publication date
EP0300447A3 (en) 1990-08-29
US5021114A (en) 1991-06-04
EP0300447A2 (de) 1989-01-25
EP0300447B1 (de) 1995-10-04
KR890003266A (ko) 1989-04-13
KR920002864B1 (ko) 1992-04-06
DE3854541T2 (de) 1996-03-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee