KR920003412A - 기판을 프로세싱하는 동안 가스를 기초로 하여 기판의 이면을 보호하는 방법 및 장치 - Google Patents

기판을 프로세싱하는 동안 가스를 기초로 하여 기판의 이면을 보호하는 방법 및 장치 Download PDF

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KR920003412A
KR920003412A KR1019910012002A KR910012002A KR920003412A KR 920003412 A KR920003412 A KR 920003412A KR 1019910012002 A KR1019910012002 A KR 1019910012002A KR 910012002 A KR910012002 A KR 910012002A KR 920003412 A KR920003412 A KR 920003412A
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substrate
platen
gas
surface portion
backside
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KR1019910012002A
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KR100217351B1 (ko
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이. 토마스 마이클
피.반 데 반 에버하더스
케이. 브로드벤트 엘리오트
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존 지. 웨브
내쇼날 세미컨덕터 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract

내용 없음

Description

기판을 프로세싱하는 동안 가스를 기초로 하여 기판의 이면을 보호하는 방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 화학적 증착 시스템에 대한 프로세스 쳄버의 일부를 잘라낸 다음에 상방에서 본 평면도,
제2도는 제1도의 프로세스 쳄버의 일부를 잘라낸 다음에 측방에서 본 평면도,
제3도는 제1도에서 도시된 복수개의 플래튼중 한 플래튼의 평면도.

Claims (21)

  1. 프로세스 챔버에서 기판을 지지하는 장치에 있어서, 상기 기판을 플래튼의 표면 부분상에 보유하기 위해 기판 보유기를 지니되,상기 기판 보유기가 플래튼의 표면부분에 대하여 프로세스될 기판의 에지를 봉입하는데 영향을 주지 않게 하는 플래톤, 가스가 도입됨에 따라 지지된 웨이퍼의 이면으로 부터 상기 지지된 웨이퍼의 정면 까지 존재하는 정량의 압력차를 설정하기 위해 상기 플래튼의 표면 부분에 제공된 가스 분배기를 포함하는 장치.
  2. 제1항에 있어서, 상기 가스가 비활성 열 가스인 장치.
  3. 제2항에 있어서, 상기 가스가 아르곤을 포함하는 장치.
  4. 제1항에 있어서, 상기 가스분배기가 상기 플래톤 표면 부분의 주변에 있는 윤형의 흠을 포함하는 장치.
  5. 제1항에 있어서, 상기 가스 분배기와 합체되어 있으며 상기 플래튼을 통해 연장하는 가스 라인을 부가적으로 포함하는 장치.
  6. 제5항에 있어서, 상기 가스 라인은 상기 플래튼에 내재하는 방사상의 보어 네트워크를 포함하며, 상기 보어 네트워크는 각각의 윤형 위치에서 상기 윤형의 홈과 교차하는 장치.
  7. 제6항에 있어서, 상기 보어 네트워크의 보어는 상기 플래튼의 에지로부터 시작하여 상기 플래튼의 중앙에 모여지며, 상기 보어중 한 보어는 외부 가스원에 연결되기에 적합하며 상기 보어의 나머지 보어는 각각의 외측 개구부에 플러그되는 장치.
  8. 제1항에 있어서, 상기 플래튼 표면 부분은 상기 플래튼 표면의 매립 영역이며, 상기 기판 보유기는 상기 매립 영역의 측벽인 장치.
  9. 제8항에 있어서, 상기 가스 분배기는 상기 측벽에 근접해 있으며 상기 매립 영역에 배치된 윤형의 홈을 포함하는 장치.
  10. 제1항에 있어서, 상기 기판 보유기는 상기 플래튼 표면부분의 에지에 있는 각각의 위치로부터 돌출한 2개의 핀을 포함하는 장치.
  11. 제10항에 있어서, 상기 가스 분배기는 상기 핀에 근접해 있으며 플래튼 표면 부분에 배치된 윤형의 흠을 포함하는 장치.
  12. 프로세스 쳄버에서 기판을 지지하는 장치에 있어서, 상기 쳄버에 장착된 베이스, 상기 베이스상에 장착된 플래튼으로서, 상기 기판을 상기 플래튼 표면부분상에 보유하기 위하여 기판 보유기를 지니되, 상기 기판 보유기가 상기 플래톤 표면 부분에 대하여 프로세스될 기판의 에지를 봉입하는데 영향을 주지 않게 하는 플래톤, 상기 플래톤 표면 부분에 의해 한정된 주변 영역 및 상기 기판 보유기에 의해 보유된 기판의 이면 주변을 통해 이면 가스를 균일하게 분배하기 위하여 상기 플래톤 표면 부분에 제공된 수단, 상기 가스 분배 수단과 합체되어 있으며 상기 플래튼을 통해 연장하는 가스 라인, 및 상기 프로세스 쳄버에 프로세스 가스를 사용하는 동안 상기 가스 분배기의 압력하에서 상기 미리 선택된 다량의 이면 가스를 공급하기 위하여 상기 가스라인에 연결되어 있되, 상기 다량의 이면 가스는, 상기 주변 영역을 통해 상기 프로세스 쳄버내로 상기 이면 가스가 외부로 방사 유출되는 것을 설정하도록 선택되게 하며 상기 외부로의 방사 유출은 상기 프로세스 가스가 상기 주변 영역을 관통하지 못하게 할 정도로 충분하게 되는 가스 원을 포함하는 장치.
  13. 프로세스 쳄버에서 기판을 지지하며 이송하는 장치에 있어서, 베이스, 상기 베이스상에 장착된 플래튼으로서, 플래튼 표면 부분상에 상기 기판을 보유하기 위하여 기판 보유기를 지니되, 상기 기판 보유기가 상기 플래튼 표면 부분상에 상기 기판을 보유하기 위하여 기판 보유기를 지니되, 상기 기판 보유기가 상기 플래튼,아암을 지니되, 상기 아암이 상기 플래톤 표면 부분상에 접합 이송 영역으로 및 상기 플래톤으로부터 이격된 공간으로 선택성있게 가동되게 하는 웨이퍼 이송 기구, 상기 플래튼 표면 부분에 제공된 가스 분배기, 및 상기 가스 분배기와 합체되어 있으며 상기 플래튼을 통해 연장되어 있는 가스 라인을 포함하고, 상기 가스 분배기는 가스가 상기 가스라인을 도입됨에 따라 상기 이송 영역에서 기판을 부양시키는 기능을 하는 장치.
  14. 제12항에 있어서, 상기 가스 라인에 연결된 가스원을 부가적으로 포함하는 장치.
  15. 제13항에 있어서, 상기 기판 이송 기구의 아암이 적어도 하나의 기지(tine)에서 마무리되는 장치.
  16. 제13항에 있어서, 상기 기판 이송 기구의 아암이 좁은 간격의 폭을 지닌 2개의 가지에서 마무리되고, 상기 가지는 기판을 지지하기 위하여 이격되어 있는 장치.
  17. 제16항에 있어서, 상기 가지는 관통된 구멍을 지니는 장치.
  18. 프로세스 쳄버에서 복수개의 기판을 지지하는 장치에 있어서, 상기 기판중 각각의 기판을 플래픈 표면부분상에 보유하기 위하여 기판 보유기를 각각 지니되, 상기 기판 보유기가 플래튼 표면 부분에 대하여 프로세스될 기판의 에지를 봉입시키는 데 영향을 주지 않게 하는 복수개의 플래튼, 가스가 도입됨에 따라 지지된 웨이퍼의 이면으로 부터 정면까지 존재하는 정량의 압력차를 설정하기 위해 상기 플래튼 표면 부분에 제공된 가스 분배기, 상기 가스 분배기와 합체되어 있으며 상기 플래튼을 통해 연장되어 있는 가스 라인, 상기 플래튼의 합체된 가스 라인으로 도입되기 전에 가스를 가열하기 위하여 상기 플래튼중 각각의 플래튼과 각각 연관되어 있는 복수개의 가열기, 가스를 수용하고 장착 블록을 통해 회전운동을 하기 위하여 장착 블록과 가동성있게 정합하는 데 적합한 지지 블록, 및 상기 가열기 및 상기 플래튼중 연관된 플래튼을 지지하고 가스를 이송시키기 위하여 상기 가열기중 각각의 가열기를 상기 지지 블록에 각각 연결시키는 복수개의 튜브를 포함하는 장치.
  19. 프로세스 쳄버에서 지원되는 기판 이면의 데포지션을 방지하는 방법에 있어서, 상기 기판을 플래튼상에 수용하는 단계, 상기 프로세스 쳄버내에 프로세스 가스를 도입시키는 단계상기 플래튼으로부터 상기 기판의 이면 주변 및 플래튼 사이의 주변 영역으로 다량의 이면가스를 균일하게 분산시키는 단계, 및 상기 플래튼에 대하여 프로세스될 기판의 에지를 완전히 봉입시키지 않고서도 상기 플래튼상에 상기 기판을 보유하는 단계를 포함하며, 상기 다량의 이면 가스는 상기 주변 영역을 통해 상기 프로세스 쳄버내로 상기 이면 가스의 외부로 향하는 방사 유출을 설정하기 위해 선택되는 방법.
  20. 제19항에 있어서, 상기 기판을 수용하는 단계는 상기 플래튼 상에 걸쳐져 있는 이송 영역으로 기판을 이송시키는 단계, 및 상기 이송 영역상에 상기 기판을 부양시키기에 충분하도록 상기 플래튼상에 상기 다량의 이면가스를 분배시키는 단계를 포함하는 방법.
  21. 제19항에 있어서, 상기 보유 단가는 상기 플랜튼의 매립 영역내에 상기 기판을 배치시키는 단계를 포함하며, 상기 다량의 이면 가스는 상기 매립영역의 기초판상 및 상기 매립 영역내에 상기 기판을 유지하도록 선택되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910012002A 1990-07-16 1991-07-15 기판을 프로세싱하는 동안 가스를 기초로하여 기판의 이면을 보호하는 방법 및 장치 KR100217351B1 (ko)

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KR1019910012213A KR970008323B1 (ko) 1990-07-16 1991-07-16 처리가공이 가스베이스 기판 후면을 보호하는 장치 및 방법

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JPH06283431A (ja) 1994-10-07
DE69127865D1 (de) 1997-11-13
EP0467624A1 (en) 1992-01-22
KR920003410A (ko) 1992-02-29
EP0467624B1 (en) 1997-10-08
DE69127865T2 (de) 1998-02-05
US5679405A (en) 1997-10-21

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