DE4142065C2 - Leseverstärkersteuerungsschaltkreis für eine Halbleiterspeichervorrichtung - Google Patents

Leseverstärkersteuerungsschaltkreis für eine Halbleiterspeichervorrichtung

Info

Publication number
DE4142065C2
DE4142065C2 DE4142065A DE4142065A DE4142065C2 DE 4142065 C2 DE4142065 C2 DE 4142065C2 DE 4142065 A DE4142065 A DE 4142065A DE 4142065 A DE4142065 A DE 4142065A DE 4142065 C2 DE4142065 C2 DE 4142065C2
Authority
DE
Germany
Prior art keywords
sense amplifier
mos transistor
supply voltage
vcc
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4142065A
Other languages
German (de)
English (en)
Other versions
DE4142065A1 (de
Inventor
Hong-Seon Hwang
Jong-Hyun Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE4142065A1 publication Critical patent/DE4142065A1/de
Application granted granted Critical
Publication of DE4142065C2 publication Critical patent/DE4142065C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE4142065A 1991-07-31 1991-12-19 Leseverstärkersteuerungsschaltkreis für eine Halbleiterspeichervorrichtung Expired - Fee Related DE4142065C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910013279A KR940003409B1 (ko) 1991-07-31 1991-07-31 반도체 메모리 장치의 센스앰프 제어회로

Publications (2)

Publication Number Publication Date
DE4142065A1 DE4142065A1 (de) 1993-02-04
DE4142065C2 true DE4142065C2 (de) 1996-04-18

Family

ID=19318120

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4142065A Expired - Fee Related DE4142065C2 (de) 1991-07-31 1991-12-19 Leseverstärkersteuerungsschaltkreis für eine Halbleiterspeichervorrichtung

Country Status (8)

Country Link
US (1) US5267203A (OSRAM)
JP (1) JPH0756752B2 (OSRAM)
KR (1) KR940003409B1 (OSRAM)
DE (1) DE4142065C2 (OSRAM)
FR (1) FR2680040B1 (OSRAM)
GB (1) GB2258329B (OSRAM)
IT (1) IT1252592B (OSRAM)
TW (1) TW250589B (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06267275A (ja) * 1993-03-10 1994-09-22 Fujitsu Ltd センスアンプ制御回路及びセンスアンプ制御方法
KR960009953B1 (ko) * 1994-01-27 1996-07-25 삼성전자 주식회사 반도체 메모리 장치의 센스앰프 제어회로
DK0688772T3 (da) * 1994-06-16 1999-11-01 Lg Chemical Ltd Quinolincarboxylsyrederivater med 7-(4-aminomethyl-3-oxim)-pyrrolidinsubstituenter og fremgangsmåde til deres fremstilling
KR0121137B1 (ko) * 1994-12-31 1997-12-04 문정환 센스 앰프의 구동 신호 발생 회로
US5561629A (en) * 1995-03-10 1996-10-01 Xilinx, Inc. Latching sense amplifier for a programmable logic device
KR0166505B1 (ko) * 1995-08-18 1999-02-01 김주용 분리된 다수의 내부 전원전압을 사용하는 디램 및 감지증폭기 어레이
JP3672384B2 (ja) * 1996-07-24 2005-07-20 沖電気工業株式会社 センス回路
KR100223849B1 (ko) * 1996-10-24 1999-10-15 구본준 반도체 메모리장치
JP3742191B2 (ja) * 1997-06-06 2006-02-01 株式会社東芝 半導体集積回路装置
KR100300026B1 (ko) * 1997-11-08 2001-09-03 김영환 블록디코드칼럼선택장치
US6009031A (en) * 1998-08-18 1999-12-28 Advanced Array Corp Supply line controlled sense amplifier
US6535426B2 (en) * 2001-08-02 2003-03-18 Stmicroelectronics, Inc. Sense amplifier circuit and method for nonvolatile memory devices
KR100550632B1 (ko) * 2003-04-30 2006-02-10 주식회사 하이닉스반도체 외부 전원전압의 변화에 무관하게 균일한 센싱마진시간을갖는비트라인 센싱 방법 및 그를 위한 메모리 장치
JP2009199675A (ja) * 2008-02-22 2009-09-03 Seiko Instruments Inc 不揮発性半導体記憶装置
KR101855295B1 (ko) * 2011-09-08 2018-05-09 삼성전자주식회사 데이터 리드회로, 이를 포함하는 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 데이터 리드 방법
JP7661268B2 (ja) * 2022-03-24 2025-04-14 株式会社東芝 センスタイミング生成回路および半導体記憶装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104734A (en) * 1977-06-30 1978-08-01 Fairchild Camera And Instrument Corporation Low voltage data retention bias circuitry for volatile memories
US4585955B1 (en) * 1982-12-15 2000-11-21 Tokyo Shibaura Electric Co Internally regulated power voltage circuit for mis semiconductor integrated circuit
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
JP2598412B2 (ja) * 1987-07-10 1997-04-09 株式会社日立製作所 半導体記憶装置
US4888503A (en) * 1987-10-13 1989-12-19 Intel Corporation Constant current biased common gate differential sense amplifier
US4903237A (en) * 1988-08-02 1990-02-20 Catalyst Semiconductor, Inc. Differential sense amplifier circuit for high speed ROMS, and flash memory devices
JP2883625B2 (ja) * 1989-03-30 1999-04-19 株式会社東芝 Ｍｏｓ型充電回路
JP2789779B2 (ja) * 1990-04-14 1998-08-20 日本電気株式会社 メモリ装置
JP3037377B2 (ja) * 1990-08-27 2000-04-24 沖電気工業株式会社 半導体記憶装置
US5175451A (en) * 1990-10-08 1992-12-29 Sharp Kabushiki Kaisha Biasing circuit for sense amplifier

Also Published As

Publication number Publication date
JPH0756752B2 (ja) 1995-06-14
ITMI913496A0 (it) 1991-12-27
ITMI913496A1 (it) 1993-06-27
FR2680040A1 (fr) 1993-02-05
US5267203A (en) 1993-11-30
IT1252592B (it) 1995-06-19
GB9127519D0 (en) 1992-02-19
DE4142065A1 (de) 1993-02-04
FR2680040B1 (fr) 1994-05-13
TW250589B (OSRAM) 1995-07-01
KR940003409B1 (ko) 1994-04-21
GB2258329B (en) 1995-08-16
JPH0541086A (ja) 1993-02-19
KR930003147A (ko) 1993-02-24
GB2258329A (en) 1993-02-03

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee