DE4010610A1 - Dram-zellen anordnung unter verwendung geschichteter, kombinierter kondensatoren und verfahren zu deren herstellung - Google Patents
Dram-zellen anordnung unter verwendung geschichteter, kombinierter kondensatoren und verfahren zu deren herstellungInfo
- Publication number
- DE4010610A1 DE4010610A1 DE4010610A DE4010610A DE4010610A1 DE 4010610 A1 DE4010610 A1 DE 4010610A1 DE 4010610 A DE4010610 A DE 4010610A DE 4010610 A DE4010610 A DE 4010610A DE 4010610 A1 DE4010610 A1 DE 4010610A1
- Authority
- DE
- Germany
- Prior art keywords
- capacitor
- layer
- channel
- layered
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000003990 capacitor Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 238000003860 storage Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 3
- 238000002955 isolation Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890012491A KR950000500B1 (ko) | 1989-08-31 | 1989-08-31 | 디램셀 커패시터 제조방법 및 구조 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4010610A1 true DE4010610A1 (de) | 1991-03-14 |
Family
ID=19289455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4010610A Ceased DE4010610A1 (de) | 1989-08-31 | 1990-04-02 | Dram-zellen anordnung unter verwendung geschichteter, kombinierter kondensatoren und verfahren zu deren herstellung |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH03116970A (ko) |
| KR (1) | KR950000500B1 (ko) |
| DE (1) | DE4010610A1 (ko) |
| FR (1) | FR2651374A1 (ko) |
| GB (1) | GB2235578A (ko) |
| NL (1) | NL9000800A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4103596A1 (de) * | 1990-10-11 | 1992-04-16 | Samsung Electronics Co Ltd | Misi-dram-zelle und verfahren zu ihrer herstellung |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930007194B1 (ko) * | 1990-08-14 | 1993-07-31 | 삼성전자 주식회사 | 반도체 장치 및 그 제조방법 |
| KR960026870A (ko) * | 1994-12-31 | 1996-07-22 | 김주용 | 반도체소자의 캐패시터 제조방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0223616A2 (en) * | 1985-11-20 | 1987-05-27 | Kabushiki Kaisha Toshiba | Semiconductor memory device and manufacturing method |
| DE3916228A1 (de) * | 1988-05-18 | 1989-11-30 | Toshiba Kawasaki Kk | Halbleiterspeichervorrichtung mit stapelkondensatorzellenstruktur und verfahren zu ihrer herstellung |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0685427B2 (ja) * | 1986-03-13 | 1994-10-26 | 三菱電機株式会社 | 半導体記憶装置 |
| JPS63146461A (ja) * | 1986-12-10 | 1988-06-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPS63239969A (ja) * | 1987-03-27 | 1988-10-05 | Sony Corp | メモリ装置 |
| JPH01101664A (ja) * | 1987-10-15 | 1989-04-19 | Nec Corp | 半導体集積回路装置 |
| JPH0666437B2 (ja) * | 1987-11-17 | 1994-08-24 | 富士通株式会社 | 半導体記憶装置及びその製造方法 |
| JPH01192163A (ja) * | 1988-01-28 | 1989-08-02 | Toshiba Corp | 半導体装置の製造方法 |
-
1989
- 1989-08-31 KR KR1019890012491A patent/KR950000500B1/ko not_active IP Right Cessation
-
1990
- 1990-03-30 GB GB9007157A patent/GB2235578A/en not_active Withdrawn
- 1990-04-02 DE DE4010610A patent/DE4010610A1/de not_active Ceased
- 1990-04-05 NL NL9000800A patent/NL9000800A/nl not_active Application Discontinuation
- 1990-06-13 FR FR9007343A patent/FR2651374A1/fr active Pending
- 1990-07-10 JP JP2182550A patent/JPH03116970A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0223616A2 (en) * | 1985-11-20 | 1987-05-27 | Kabushiki Kaisha Toshiba | Semiconductor memory device and manufacturing method |
| DE3916228A1 (de) * | 1988-05-18 | 1989-11-30 | Toshiba Kawasaki Kk | Halbleiterspeichervorrichtung mit stapelkondensatorzellenstruktur und verfahren zu ihrer herstellung |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4103596A1 (de) * | 1990-10-11 | 1992-04-16 | Samsung Electronics Co Ltd | Misi-dram-zelle und verfahren zu ihrer herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2651374A1 (fr) | 1991-03-01 |
| KR950000500B1 (ko) | 1995-01-24 |
| JPH03116970A (ja) | 1991-05-17 |
| NL9000800A (nl) | 1991-03-18 |
| GB9007157D0 (en) | 1990-05-30 |
| KR910005305A (ko) | 1991-03-30 |
| GB2235578A (en) | 1991-03-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8131 | Rejection |