GB9007157D0 - Dynamic random access memory and method of manufacturing the same - Google Patents

Dynamic random access memory and method of manufacturing the same

Info

Publication number
GB9007157D0
GB9007157D0 GB909007157A GB9007157A GB9007157D0 GB 9007157 D0 GB9007157 D0 GB 9007157D0 GB 909007157 A GB909007157 A GB 909007157A GB 9007157 A GB9007157 A GB 9007157A GB 9007157 D0 GB9007157 D0 GB 9007157D0
Authority
GB
United Kingdom
Prior art keywords
manufacturing
same
random access
access memory
dynamic random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB909007157A
Other versions
GB2235578A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Goldstar Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Electron Co Ltd filed Critical Goldstar Electron Co Ltd
Publication of GB9007157D0 publication Critical patent/GB9007157D0/en
Publication of GB2235578A publication Critical patent/GB2235578A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
GB9007157A 1989-08-31 1990-03-30 Capacitors for dram cells Withdrawn GB2235578A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890012491A KR950000500B1 (en) 1989-08-31 1989-08-31 Manufacturing method and structure of dram cell capacitor

Publications (2)

Publication Number Publication Date
GB9007157D0 true GB9007157D0 (en) 1990-05-30
GB2235578A GB2235578A (en) 1991-03-06

Family

ID=19289455

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9007157A Withdrawn GB2235578A (en) 1989-08-31 1990-03-30 Capacitors for dram cells

Country Status (6)

Country Link
JP (1) JPH03116970A (en)
KR (1) KR950000500B1 (en)
DE (1) DE4010610A1 (en)
FR (1) FR2651374A1 (en)
GB (1) GB2235578A (en)
NL (1) NL9000800A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930007194B1 (en) * 1990-08-14 1993-07-31 삼성전자 주식회사 Semiconductor device and its manufacturing method
KR930005738B1 (en) * 1990-10-11 1993-06-24 삼성전자 주식회사 Mist type dynamic random access memory cell and method for fabricating thereof
KR960026870A (en) * 1994-12-31 1996-07-22 김주용 Capacitor Manufacturing Method of Semiconductor Device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120070A (en) * 1985-11-20 1987-06-01 Toshiba Corp Semiconductor memory
JPH0685427B2 (en) * 1986-03-13 1994-10-26 三菱電機株式会社 Semiconductor memory device
JPS63146461A (en) * 1986-12-10 1988-06-18 Mitsubishi Electric Corp Semiconductor memory device
JPS63239969A (en) * 1987-03-27 1988-10-05 Sony Corp Memory device
JPH01101664A (en) * 1987-10-15 1989-04-19 Nec Corp Semiconductor integrated circuit device
JPH0666437B2 (en) * 1987-11-17 1994-08-24 富士通株式会社 Semiconductor memory device and manufacturing method thereof
JPH01192163A (en) * 1988-01-28 1989-08-02 Toshiba Corp Manufacture of semiconductor device
DE3916228C2 (en) * 1988-05-18 1995-06-22 Toshiba Kawasaki Kk Semiconductor memory device with stacked capacitor cell structure and method for its production

Also Published As

Publication number Publication date
DE4010610A1 (en) 1991-03-14
FR2651374A1 (en) 1991-03-01
KR950000500B1 (en) 1995-01-24
JPH03116970A (en) 1991-05-17
NL9000800A (en) 1991-03-18
KR910005305A (en) 1991-03-30
GB2235578A (en) 1991-03-06

Similar Documents

Publication Publication Date Title
EP0318277A3 (en) Dynamic random access memory device and method for producing the same
EP0486901A3 (en) Ferroelectric random access memory and methods of its operation
DE3856528T2 (en) Dynamic random access memory device and method of making the same
EP0175378A3 (en) Dynamic random access memory (dram)
EP0317199A3 (en) Layer structure of a memory cell for a dynamic random access memory device and method for producing the same
GB2138230B (en) Dynamic random access memory arrangements
EP0278155A3 (en) Dynamic random access memory
EP0706186A3 (en) Dynamic random access memory devices
KR930007835B1 (en) Dynamic random access memory device
EP0142376A3 (en) Dynamic random access memory
EP0470742A3 (en) Dynamic random access memory
DE69132998D1 (en) Random access memory array and manufacturing method therefor
KR920001329B1 (en) Dynamic random access momory
GB2231718B (en) A dynamic random access memory cell and method of making the same
KR950001424B1 (en) 3-transistor dynamic random access memory
EP0454020A3 (en) Semiconductor memory device and method of manufacturing the same
GB2223127B (en) Static random access memory
GB2212637B (en) Dynamic type memories and memory structures
GB2204756B (en) Dynamic random access memory
GB2199695B (en) Dynamic random access memory with selective well biasing
GB9007157D0 (en) Dynamic random access memory and method of manufacturing the same
EP0274390A3 (en) Semiconductor memory device and method of manufacturing the same
GB2239539B (en) Method of refreshing memory devices
DE3176605D1 (en) Dynamic semiconductor memory cell with random access and method of making the same
GB2200004B (en) Dynamic random access memory array

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)