DE3789172T2 - Verfahren zum Montieren eines Silizium-Würfels. - Google Patents

Verfahren zum Montieren eines Silizium-Würfels.

Info

Publication number
DE3789172T2
DE3789172T2 DE3789172T DE3789172T DE3789172T2 DE 3789172 T2 DE3789172 T2 DE 3789172T2 DE 3789172 T DE3789172 T DE 3789172T DE 3789172 T DE3789172 T DE 3789172T DE 3789172 T2 DE3789172 T2 DE 3789172T2
Authority
DE
Germany
Prior art keywords
layer
die
silicon
bonding
adhesion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3789172T
Other languages
English (en)
Other versions
DE3789172D1 (de
Inventor
Harlan Lawler
William S Phy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE3789172D1 publication Critical patent/DE3789172D1/de
Publication of DE3789172T2 publication Critical patent/DE3789172T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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DE3789172T 1986-06-17 1987-06-11 Verfahren zum Montieren eines Silizium-Würfels. Expired - Lifetime DE3789172T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/875,345 US4772935A (en) 1984-12-19 1986-06-17 Die bonding process

Publications (2)

Publication Number Publication Date
DE3789172D1 DE3789172D1 (de) 1994-04-07
DE3789172T2 true DE3789172T2 (de) 1994-08-25

Family

ID=25365640

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789172T Expired - Lifetime DE3789172T2 (de) 1986-06-17 1987-06-11 Verfahren zum Montieren eines Silizium-Würfels.

Country Status (4)

Country Link
US (1) US4772935A (de)
EP (1) EP0253691B1 (de)
JP (1) JPS632332A (de)
DE (1) DE3789172T2 (de)

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GB8807729D0 (en) * 1988-03-31 1988-05-05 British Telecomm Device mounting
US5076486A (en) * 1989-02-28 1991-12-31 Rockwell International Corporation Barrier disk
DE69021438T2 (de) * 1989-05-16 1996-01-25 Marconi Gec Ltd Verfahren zur Herstellung einer Flip-Chip-Lötstruktur für Anordnungen mit Gold-Metallisierung.
US5027997A (en) * 1990-04-05 1991-07-02 Hughes Aircraft Company Silicon chip metallization system
DE4129654B4 (de) * 1990-09-28 2004-11-25 Siemens Ag Rückseitenkontakt für einen Halbleiterkörper
DE4107660C2 (de) * 1991-03-09 1995-05-04 Bosch Gmbh Robert Verfahren zur Montage von Silizium-Plättchen auf metallischen Montageflächen
JPH0574824A (ja) * 1991-08-26 1993-03-26 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
US5197654A (en) * 1991-11-15 1993-03-30 Avishay Katz Bonding method using solder composed of multiple alternating gold and tin layers
GB9204731D0 (en) * 1992-03-05 1992-04-15 Westinghouse Brake & Signal A solder joint
US5234153A (en) * 1992-08-28 1993-08-10 At&T Bell Laboratories Permanent metallic bonding method
EP0622837B1 (de) * 1993-04-27 2000-10-11 Nec Corporation Verfahren zur Herstellung einer optische Halbleitervorrichtung
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EP0253691A3 (en) 1989-01-18
JPS632332A (ja) 1988-01-07
EP0253691B1 (de) 1994-03-02
US4772935A (en) 1988-09-20
DE3789172D1 (de) 1994-04-07

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