DE3688231D1 - Dynamische speichervorrichtung mit wahlfreiem zugriff mit einem monokristallinen transistor auf einer rillenartigen kondensatorstruktur und herstellungsverfahren dafuer. - Google Patents

Dynamische speichervorrichtung mit wahlfreiem zugriff mit einem monokristallinen transistor auf einer rillenartigen kondensatorstruktur und herstellungsverfahren dafuer.

Info

Publication number
DE3688231D1
DE3688231D1 DE8686111645T DE3688231T DE3688231D1 DE 3688231 D1 DE3688231 D1 DE 3688231D1 DE 8686111645 T DE8686111645 T DE 8686111645T DE 3688231 T DE3688231 T DE 3688231T DE 3688231 D1 DE3688231 D1 DE 3688231D1
Authority
DE
Germany
Prior art keywords
monocristalline
transistor
manufacturing
storage device
capacitor structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686111645T
Other languages
English (en)
Other versions
DE3688231T2 (de
Inventor
Nicky Chau-Chun Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3688231D1 publication Critical patent/DE3688231D1/de
Application granted granted Critical
Publication of DE3688231T2 publication Critical patent/DE3688231T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE86111645T 1985-10-21 1986-08-22 Dynamische speichervorrichtung mit wahlfreiem zugriff mit einem monokristallinen transistor auf einer rillenartigen kondensatorstruktur und herstellungsverfahren dafuer. Expired - Fee Related DE3688231T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/789,675 US4649625A (en) 1985-10-21 1985-10-21 Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor

Publications (2)

Publication Number Publication Date
DE3688231D1 true DE3688231D1 (de) 1993-05-13
DE3688231T2 DE3688231T2 (de) 1993-11-04

Family

ID=25148357

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86111645T Expired - Fee Related DE3688231T2 (de) 1985-10-21 1986-08-22 Dynamische speichervorrichtung mit wahlfreiem zugriff mit einem monokristallinen transistor auf einer rillenartigen kondensatorstruktur und herstellungsverfahren dafuer.

Country Status (13)

Country Link
US (1) US4649625A (de)
EP (1) EP0220410B1 (de)
JP (1) JPH06101546B2 (de)
KR (1) KR900002885B1 (de)
CN (1) CN1005883B (de)
AU (1) AU575499B2 (de)
BR (1) BR8604546A (de)
CA (1) CA1232362A (de)
DE (1) DE3688231T2 (de)
ES (1) ES2003376A6 (de)
HK (1) HK90993A (de)
IN (1) IN167820B (de)
ZA (1) ZA866625B (de)

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Also Published As

Publication number Publication date
US4649625A (en) 1987-03-17
EP0220410A2 (de) 1987-05-06
HK90993A (en) 1993-09-10
JPH06101546B2 (ja) 1994-12-12
EP0220410A3 (en) 1989-05-10
CN1005883B (zh) 1989-11-22
ES2003376A6 (es) 1988-11-01
KR870004513A (ko) 1987-05-11
KR900002885B1 (ko) 1990-05-01
AU575499B2 (en) 1988-07-28
EP0220410B1 (de) 1993-04-07
CA1232362A (en) 1988-02-02
DE3688231T2 (de) 1993-11-04
JPS6298766A (ja) 1987-05-08
BR8604546A (pt) 1987-05-26
IN167820B (de) 1990-12-22
AU6307186A (en) 1987-04-30
ZA866625B (en) 1987-06-24
CN86105868A (zh) 1987-06-10

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