DE3332995C2 - - Google Patents
Info
- Publication number
- DE3332995C2 DE3332995C2 DE3332995A DE3332995A DE3332995C2 DE 3332995 C2 DE3332995 C2 DE 3332995C2 DE 3332995 A DE3332995 A DE 3332995A DE 3332995 A DE3332995 A DE 3332995A DE 3332995 C2 DE3332995 C2 DE 3332995C2
- Authority
- DE
- Germany
- Prior art keywords
- silicon dioxide
- treatment liquid
- substrate
- treatment
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 234
- 239000000377 silicon dioxide Substances 0.000 claims description 117
- 238000011282 treatment Methods 0.000 claims description 92
- 235000012239 silicon dioxide Nutrition 0.000 claims description 91
- 239000007788 liquid Substances 0.000 claims description 69
- 238000000576 coating method Methods 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 52
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 50
- 239000011248 coating agent Substances 0.000 claims description 48
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 44
- 239000004327 boric acid Substances 0.000 claims description 43
- 239000007864 aqueous solution Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 29
- 238000007654 immersion Methods 0.000 claims description 14
- 229920006395 saturated elastomer Polymers 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 6
- 239000012047 saturated solution Substances 0.000 claims description 6
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- UCLRHEGLZXQJKQ-UHFFFAOYSA-N silicic acid hydrofluoride Chemical compound F.[Si](O)(O)(O)O UCLRHEGLZXQJKQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910003638 H2SiF6 Inorganic materials 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 238000010025 steaming Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 15
- 229910052681 coesite Inorganic materials 0.000 description 15
- 229910052906 cristobalite Inorganic materials 0.000 description 15
- 229910052682 stishovite Inorganic materials 0.000 description 15
- 229910052905 tridymite Inorganic materials 0.000 description 15
- 239000010410 layer Substances 0.000 description 12
- 229910052783 alkali metal Inorganic materials 0.000 description 10
- 150000001340 alkali metals Chemical class 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910004039 HBF4 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003197 gene knockdown Methods 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/111—Deposition methods from solutions or suspensions by dipping, immersion
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Chemically Coating (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12826183A JPS6021810A (ja) | 1983-07-14 | 1983-07-14 | 酸化珪素厚膜被覆体の形成方法 |
| JP13721783A JPS6033233A (ja) | 1983-07-27 | 1983-07-27 | 酸化珪素被膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3332995A1 DE3332995A1 (de) | 1985-01-24 |
| DE3332995C2 true DE3332995C2 (forum.php) | 1992-12-24 |
Family
ID=26463982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833332995 Granted DE3332995A1 (de) | 1983-07-14 | 1983-09-13 | Verfahren zum herstellen einer siliciumdioxidbeschichtung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4468420A (forum.php) |
| DD (1) | DD215996A5 (forum.php) |
| DE (1) | DE3332995A1 (forum.php) |
| FR (1) | FR2549035A1 (forum.php) |
| GB (1) | GB2144733B (forum.php) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4413575B4 (de) * | 1993-04-19 | 2005-09-29 | Olympus Corporation | Verfahren zur Herstellung eines optischen Elements |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61281047A (ja) * | 1985-06-06 | 1986-12-11 | Nippon Sheet Glass Co Ltd | 二酸化珪素被膜の製造方法 |
| JPH0627347B2 (ja) * | 1985-07-19 | 1994-04-13 | 日本板硝子株式会社 | 二酸化珪素被膜の製造方法 |
| JP2541269B2 (ja) * | 1987-08-27 | 1996-10-09 | 日本板硝子株式会社 | 酸化物薄膜の製造方法 |
| EP0413482B1 (en) * | 1989-08-18 | 1997-03-12 | Galileo Electro-Optics Corp. | Thin-film continuous dynodes |
| DE3936654C1 (forum.php) * | 1989-11-03 | 1990-12-20 | Schott Glaswerke, 6500 Mainz, De | |
| DE69033019T2 (de) * | 1989-12-28 | 1999-10-21 | Sumitomo Electric Industries, Ltd. | Anorganisches isolierungsherstellungsverfahren |
| EP0450780A3 (en) * | 1990-04-05 | 1992-04-15 | Matsushita Electric Industrial Co., Ltd. | Optical microelement array and its production method |
| JP2803355B2 (ja) * | 1990-09-29 | 1998-09-24 | 日本板硝子株式会社 | 二酸化珪素被膜の製造方法 |
| EP0510191A4 (en) * | 1990-10-25 | 1993-03-03 | Nippon Sheet Glass Co., Ltd. | Process for preparing silicon dioxide coating |
| JP3202253B2 (ja) * | 1991-03-29 | 2001-08-27 | 株式会社東芝 | 露光用マスクの製造方法及び露光用マスク |
| US5939188A (en) * | 1991-07-15 | 1999-08-17 | Pilkington Aerospace, Inc. | Transparent coating systems for improving the environmental durability of transparency substrates |
| JP2928664B2 (ja) * | 1991-08-12 | 1999-08-03 | 株式会社東芝 | 酸化珪素成膜方法およびこの方法に用いる成膜装置 |
| DE4130930A1 (de) * | 1991-09-13 | 1993-03-25 | Flachglas Ag | Vorsatzaggregat fuer bildschirme oder dergleichen |
| JPH0597474A (ja) * | 1991-10-04 | 1993-04-20 | Nippon Sheet Glass Co Ltd | 撥水性物品およびその製造方法 |
| CA2084247A1 (en) | 1992-03-18 | 1993-09-19 | Francis Paul Fehlner | Lcd panel production |
| JPH05304202A (ja) * | 1992-04-02 | 1993-11-16 | Nec Corp | 半導体装置の製造方法 |
| US5863337A (en) * | 1993-02-16 | 1999-01-26 | Ppg Industries, Inc. | Apparatus for coating a moving glass substrate |
| US5599387A (en) * | 1993-02-16 | 1997-02-04 | Ppg Industries, Inc. | Compounds and compositions for coating glass with silicon oxide |
| US5356718A (en) * | 1993-02-16 | 1994-10-18 | Ppg Industries, Inc. | Coating apparatus, method of coating glass, compounds and compositions for coating glasss and coated glass substrates |
| CA2131668C (en) * | 1993-12-23 | 1999-03-02 | Carol Galli | Isolation structure using liquid phase oxide deposition |
| US5470681A (en) * | 1993-12-23 | 1995-11-28 | International Business Machines Corporation | Phase shift mask using liquid phase oxide deposition |
| US5578103A (en) * | 1994-08-17 | 1996-11-26 | Corning Incorporated | Alkali metal ion migration control |
| US5614270A (en) * | 1996-02-09 | 1997-03-25 | National Science Council | Method of improving electrical characteristics of a liquid phase deposited silicon dioxide film by plasma treatment |
| US5753311A (en) * | 1996-10-01 | 1998-05-19 | National Science Council | Method for forming oxide layer |
| US6001425A (en) | 1997-07-08 | 1999-12-14 | Northrop Grumman Corporation | Ceramic RAM film coating process |
| US6593077B2 (en) | 1999-03-22 | 2003-07-15 | Special Materials Research And Technology, Inc. | Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate |
| US6080683A (en) * | 1999-03-22 | 2000-06-27 | Special Materials Research And Technology, Inc. | Room temperature wet chemical growth process of SiO based oxides on silicon |
| US6569243B2 (en) * | 2000-02-23 | 2003-05-27 | Odawara Automation, Inc. | Method and apparatus for coating an electric coil including vibration |
| US6613697B1 (en) | 2001-06-26 | 2003-09-02 | Special Materials Research And Technology, Inc. | Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof |
| US6593221B1 (en) * | 2002-08-13 | 2003-07-15 | Micron Technology, Inc. | Selective passivation of exposed silicon |
| EP1579490B1 (en) * | 2002-11-19 | 2014-05-14 | William Marsh Rice University | Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth |
| US7154086B2 (en) * | 2003-03-19 | 2006-12-26 | Burle Technologies, Inc. | Conductive tube for use as a reflectron lens |
| US6998204B2 (en) * | 2003-11-13 | 2006-02-14 | International Business Machines Corporation | Alternating phase mask built by additive film deposition |
| US7393779B2 (en) * | 2005-10-31 | 2008-07-01 | International Business Machines Corporation | Shrinking contact apertures through LPD oxide |
| JP2007201252A (ja) * | 2006-01-27 | 2007-08-09 | Canon Inc | 露光装置及びデバイス製造方法 |
| US20080073516A1 (en) * | 2006-03-10 | 2008-03-27 | Laprade Bruce N | Resistive glass structures used to shape electric fields in analytical instruments |
| FR2929860B1 (fr) * | 2008-04-11 | 2010-12-17 | Commissariat Energie Atomique | Dispositif d'extraction de particules de l'haleine expiree |
| WO2012112516A1 (en) * | 2011-02-14 | 2012-08-23 | Natcore Technology, Inc. | Systems and methods for rapid liquid phase deposition of films |
| US9994714B2 (en) * | 2013-05-16 | 2018-06-12 | Thomas E. Kane | Silica protected pigments for use in artist media |
| KR102344486B1 (ko) * | 2015-03-19 | 2021-12-29 | 한국전자통신연구원 | 신경 신호 측정용 신경전극 및 이의 제조 방법 |
| KR102775783B1 (ko) | 2019-08-29 | 2025-02-28 | 디지렌즈 인코포레이티드. | 진공 격자 및 이의 제조 방법 |
| US12158612B2 (en) * | 2021-03-05 | 2024-12-03 | Digilens Inc. | Evacuated periodic structures and methods of manufacturing |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB626810A (en) * | 1946-08-16 | 1949-07-21 | Rca Corp | Process of depositing silica films |
| US2505629A (en) * | 1949-06-30 | 1950-04-25 | Rca Corp | Method of depositing silica films and preparation of solutions therefor |
| US2695247A (en) * | 1952-03-05 | 1954-11-23 | Pittsburgh Plate Glass Co | Production of transparent electroconductive article |
| JPS5682203A (en) * | 1979-12-10 | 1981-07-04 | Meinan Machinery Works | Method of treating tender of veneer |
| JPS57166337A (en) * | 1981-04-01 | 1982-10-13 | Nippon Sheet Glass Co Ltd | Preparation of glass for preventing reflection |
-
1983
- 1983-09-13 DE DE19833332995 patent/DE3332995A1/de active Granted
- 1983-09-14 FR FR8314651A patent/FR2549035A1/fr active Granted
- 1983-09-15 DD DD83254853A patent/DD215996A5/de not_active IP Right Cessation
- 1983-09-15 GB GB08324760A patent/GB2144733B/en not_active Expired
- 1983-10-03 US US06/538,289 patent/US4468420A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4413575B4 (de) * | 1993-04-19 | 2005-09-29 | Olympus Corporation | Verfahren zur Herstellung eines optischen Elements |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2144733A (en) | 1985-03-13 |
| US4468420A (en) | 1984-08-28 |
| FR2549035A1 (en) | 1985-01-18 |
| GB2144733B (en) | 1987-02-25 |
| FR2549035B1 (forum.php) | 1987-03-06 |
| GB8324760D0 (en) | 1983-10-19 |
| DD215996A5 (de) | 1984-11-28 |
| DE3332995A1 (de) | 1985-01-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |