DE3312720A1 - Verfahren zur herstellung von komplementaeren mos-transistoren in hochintegrierten schaltungen fuer hohe spannungen - Google Patents

Verfahren zur herstellung von komplementaeren mos-transistoren in hochintegrierten schaltungen fuer hohe spannungen

Info

Publication number
DE3312720A1
DE3312720A1 DE19833312720 DE3312720A DE3312720A1 DE 3312720 A1 DE3312720 A1 DE 3312720A1 DE 19833312720 DE19833312720 DE 19833312720 DE 3312720 A DE3312720 A DE 3312720A DE 3312720 A1 DE3312720 A1 DE 3312720A1
Authority
DE
Germany
Prior art keywords
substrate
layer
mask
dopants
intermediate zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833312720
Other languages
German (de)
English (en)
Other versions
DE3312720C2 (enExample
Inventor
Gianfranco 20100 Milano Cerofolini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of DE3312720A1 publication Critical patent/DE3312720A1/de
Application granted granted Critical
Publication of DE3312720C2 publication Critical patent/DE3312720C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/07—Guard rings and cmos

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
DE19833312720 1982-04-08 1983-04-08 Verfahren zur herstellung von komplementaeren mos-transistoren in hochintegrierten schaltungen fuer hohe spannungen Granted DE3312720A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8220661A IT1210872B (it) 1982-04-08 1982-04-08 Processo per la fabbricazione di transistori mos complementari in circuiti integrati ad alta densita' per tensioni elevate.

Publications (2)

Publication Number Publication Date
DE3312720A1 true DE3312720A1 (de) 1983-10-13
DE3312720C2 DE3312720C2 (enExample) 1992-09-17

Family

ID=11170208

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833312720 Granted DE3312720A1 (de) 1982-04-08 1983-04-08 Verfahren zur herstellung von komplementaeren mos-transistoren in hochintegrierten schaltungen fuer hohe spannungen

Country Status (7)

Country Link
US (1) US4468852A (enExample)
JP (1) JPS58202562A (enExample)
DE (1) DE3312720A1 (enExample)
FR (1) FR2525030B1 (enExample)
GB (1) GB2120844B (enExample)
IT (1) IT1210872B (enExample)
NL (1) NL188607C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3320500A1 (de) * 1982-06-10 1983-12-15 Intel Corp., Santa Clara, Calif. Verfahren zur herstellung einer integrierten cmos-schaltung

Families Citing this family (21)

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JPS60123055A (ja) * 1983-12-07 1985-07-01 Fujitsu Ltd 半導体装置及びその製造方法
US4578859A (en) * 1984-08-22 1986-04-01 Harris Corporation Implant mask reversal process
US4600445A (en) * 1984-09-14 1986-07-15 International Business Machines Corporation Process for making self aligned field isolation regions in a semiconductor substrate
US4598460A (en) * 1984-12-10 1986-07-08 Solid State Scientific, Inc. Method of making a CMOS EPROM with independently selectable thresholds
US4604790A (en) * 1985-04-01 1986-08-12 Advanced Micro Devices, Inc. Method of fabricating integrated circuit structure having CMOS and bipolar devices
US4725875A (en) * 1985-10-01 1988-02-16 General Electric Co. Memory cell with diodes providing radiation hardness
US4692992A (en) * 1986-06-25 1987-09-15 Rca Corporation Method of forming isolation regions in a semiconductor device
US4717683A (en) * 1986-09-23 1988-01-05 Motorola Inc. CMOS process
US4883767A (en) * 1986-12-05 1989-11-28 General Electric Company Method of fabricating self aligned semiconductor devices
US5292671A (en) * 1987-10-08 1994-03-08 Matsushita Electric Industrial, Co., Ltd. Method of manufacture for semiconductor device by forming deep and shallow regions
US5192993A (en) * 1988-09-27 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor device having improved element isolation area
FR2672732B1 (fr) * 1991-02-12 1997-03-21 Sgs Thomson Microelectronics Structure monolithique comprenant deux ensembles de diodes de protection bidirectionnelles.
JPH05267604A (ja) * 1991-05-08 1993-10-15 Seiko Instr Inc 半導体装置の製造方法
KR0138234B1 (ko) * 1994-02-24 1998-04-28 김광호 고전압 모오스 트랜지스터의 구조
US5982012A (en) * 1998-01-14 1999-11-09 Foveon, Inc. Pixel cells and pixel cell arrays having low leakage and improved performance characteristics
JP3621303B2 (ja) * 1999-08-30 2005-02-16 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
US7049669B2 (en) * 2003-09-15 2006-05-23 Infineon Technologies Ag LDMOS transistor
RU2528574C1 (ru) * 2013-03-12 2014-09-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" Способ изготовления изолирующих областей полупроводникового прибора
TWI588918B (zh) * 2014-04-01 2017-06-21 亞太優勢微系統股份有限公司 具精確間隙機電晶圓結構與及其製作方法
CN112447776A (zh) * 2019-08-28 2021-03-05 天津大学青岛海洋技术研究院 一种降低电荷回流的cmos图像传感器像素制作方法
US20210135231A1 (en) * 2019-11-04 2021-05-06 Xnrgi, Inc. Porous two-wafer battery

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3002051A1 (de) * 1979-01-22 1980-07-31 Ates Componenti Elettron Verfahren zur herstellung von komplementaeren mos-transistoren hoher integration fuer hohe spannungen

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3983620A (en) * 1975-05-08 1976-10-05 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
US4013484A (en) * 1976-02-25 1977-03-22 Intel Corporation High density CMOS process
JPS52131483A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Mis-type semiconductor device
US4135955A (en) * 1977-09-21 1979-01-23 Harris Corporation Process for fabricating high voltage cmos with self-aligned guard rings utilizing selective diffusion and local oxidation
US4131907A (en) * 1977-09-28 1978-12-26 Ouyang Paul H Short-channel V-groove complementary MOS device
JPS5529116A (en) * 1978-08-23 1980-03-01 Hitachi Ltd Manufacture of complementary misic
JPS5691461A (en) * 1979-12-25 1981-07-24 Fujitsu Ltd Manufacturing of complementary mos integrated circuit
JPS56118367A (en) * 1980-02-22 1981-09-17 Fujitsu Ltd Preparation of semiconductor device
US4282648A (en) * 1980-03-24 1981-08-11 Intel Corporation CMOS process
US4391650A (en) * 1980-12-22 1983-07-05 Ncr Corporation Method for fabricating improved complementary metal oxide semiconductor devices
JPS5817655A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3002051A1 (de) * 1979-01-22 1980-07-31 Ates Componenti Elettron Verfahren zur herstellung von komplementaeren mos-transistoren hoher integration fuer hohe spannungen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3320500A1 (de) * 1982-06-10 1983-12-15 Intel Corp., Santa Clara, Calif. Verfahren zur herstellung einer integrierten cmos-schaltung

Also Published As

Publication number Publication date
GB2120844A (en) 1983-12-07
JPH0479142B2 (enExample) 1992-12-15
NL188607B (nl) 1992-03-02
NL8301229A (nl) 1983-11-01
IT1210872B (it) 1989-09-29
FR2525030B1 (fr) 1986-04-25
GB2120844B (en) 1985-09-25
FR2525030A1 (fr) 1983-10-14
DE3312720C2 (enExample) 1992-09-17
IT8220661A0 (it) 1982-04-08
JPS58202562A (ja) 1983-11-25
US4468852A (en) 1984-09-04
NL188607C (nl) 1992-08-03

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: KLUNKER, H., DIPL.-ING. DR.RER.NAT. SCHMITT-NILSON

8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 27/092

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee