DE3131991A1 - "zenerdiode und verfahren zu ihrer herstellung" - Google Patents
"zenerdiode und verfahren zu ihrer herstellung"Info
- Publication number
- DE3131991A1 DE3131991A1 DE3131991A DE3131991A DE3131991A1 DE 3131991 A1 DE3131991 A1 DE 3131991A1 DE 3131991 A DE3131991 A DE 3131991A DE 3131991 A DE3131991 A DE 3131991A DE 3131991 A1 DE3131991 A1 DE 3131991A1
- Authority
- DE
- Germany
- Prior art keywords
- window
- area
- junction
- conductivity type
- zener
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title description 7
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000012535 impurity Substances 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 16
- 230000000694 effects Effects 0.000 claims description 13
- 230000012010 growth Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 36
- 239000000758 substrate Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010039509 Scab Diseases 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE8004651,A NL187942C (nl) | 1980-08-18 | 1980-08-18 | Zenerdiode en werkwijze ter vervaardiging daarvan. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3131991A1 true DE3131991A1 (de) | 1982-04-29 |
| DE3131991C2 DE3131991C2 (es) | 1987-01-02 |
Family
ID=19835744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3131991A Granted DE3131991A1 (de) | 1980-08-18 | 1981-08-13 | "zenerdiode und verfahren zu ihrer herstellung" |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4429324A (es) |
| JP (1) | JPS5771186A (es) |
| DE (1) | DE3131991A1 (es) |
| FR (1) | FR2488734B1 (es) |
| GB (1) | GB2082386B (es) |
| IT (1) | IT1139373B (es) |
| NL (1) | NL187942C (es) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4631562A (en) * | 1985-05-31 | 1986-12-23 | Rca Corporation | Zener diode structure |
| US4651178A (en) * | 1985-05-31 | 1987-03-17 | Rca Corporation | Dual inverse zener diode with buried junctions |
| JP2561104B2 (ja) * | 1987-12-11 | 1996-12-04 | 富士通株式会社 | 半導体基板の湿式処理装置 |
| JPH0642555B2 (ja) * | 1989-06-20 | 1994-06-01 | 株式会社東芝 | 半導体装置 |
| DE4130247A1 (de) * | 1991-09-12 | 1993-03-18 | Bosch Gmbh Robert | Halbleiteranordnung und verfahren zu deren herstellung |
| DE69228046T2 (de) * | 1991-12-16 | 1999-07-01 | Koninkl Philips Electronics Nv | Zener-Diode mit Bezugs- und Schutzdiode |
| US7166528B2 (en) * | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
| US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
| US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
| US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
| JP5175285B2 (ja) * | 2006-07-31 | 2013-04-03 | アプライド マテリアルズ インコーポレイテッド | エピタキシャル層形成中の形態制御方法 |
| DE112007001814T5 (de) * | 2006-07-31 | 2009-06-04 | Applied Materials, Inc., Santa Clara | Verfahren zum Bilden kohlenstoffhaltiger Siliziumepitaxieschichten |
| JP6259399B2 (ja) * | 2012-09-27 | 2018-01-10 | ローム株式会社 | チップダイオードおよびその製造方法 |
| US10468402B1 (en) * | 2018-07-25 | 2019-11-05 | Semiconductor Components Industries, Llc | Trench diode and method of forming the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1522532A (fr) * | 1967-03-17 | 1968-04-26 | Europ Des Semiconducteurs Soc | Perfectionnements aux diodes zener |
| DE2133646A1 (de) * | 1970-07-07 | 1972-01-13 | Sescosem Soc Europ De Semi Con | Zenerdiode |
| DE2608813B2 (de) * | 1975-03-10 | 1978-11-23 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Niedrigsperrende Zenerdiode |
| EP0018862A1 (fr) * | 1979-04-20 | 1980-11-12 | Thomson-Csf | Diode à avalanche de type planar à tension de claquage comprise entre 4 et 8 volts et procédé de fabrication |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2026683B2 (de) * | 1970-06-01 | 1973-11-08 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Zenerdiode |
| DE2207654B2 (de) * | 1972-02-18 | 1974-02-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Herstellen einer Zenerdiode |
| JPS4999284A (es) * | 1973-01-27 | 1974-09-19 | ||
| JPS511586A (ja) * | 1974-06-26 | 1976-01-08 | Toyo Kogyo Co | Kariugomutokinzokutono setsuchakuhoho |
-
1980
- 1980-08-18 NL NLAANVRAGE8004651,A patent/NL187942C/xx not_active IP Right Cessation
-
1981
- 1981-07-20 US US06/284,436 patent/US4429324A/en not_active Expired - Fee Related
- 1981-08-13 DE DE3131991A patent/DE3131991A1/de active Granted
- 1981-08-14 IT IT23532/81A patent/IT1139373B/it active
- 1981-08-14 GB GB8124868A patent/GB2082386B/en not_active Expired
- 1981-08-17 FR FR8115820A patent/FR2488734B1/fr not_active Expired
- 1981-08-17 JP JP56128656A patent/JPS5771186A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1522532A (fr) * | 1967-03-17 | 1968-04-26 | Europ Des Semiconducteurs Soc | Perfectionnements aux diodes zener |
| DE2133646A1 (de) * | 1970-07-07 | 1972-01-13 | Sescosem Soc Europ De Semi Con | Zenerdiode |
| DE2608813B2 (de) * | 1975-03-10 | 1978-11-23 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Niedrigsperrende Zenerdiode |
| EP0018862A1 (fr) * | 1979-04-20 | 1980-11-12 | Thomson-Csf | Diode à avalanche de type planar à tension de claquage comprise entre 4 et 8 volts et procédé de fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2488734B1 (fr) | 1986-08-29 |
| NL187942B (nl) | 1991-09-16 |
| IT8123532A0 (it) | 1981-08-14 |
| IT1139373B (it) | 1986-09-24 |
| FR2488734A1 (fr) | 1982-02-19 |
| NL187942C (nl) | 1992-02-17 |
| GB2082386B (en) | 1984-08-15 |
| JPS5771186A (en) | 1982-05-01 |
| US4429324A (en) | 1984-01-31 |
| GB2082386A (en) | 1982-03-03 |
| DE3131991C2 (es) | 1987-01-02 |
| NL8004651A (nl) | 1982-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2317577C2 (de) | Verfahren zur Herstellung dielektrisch isolierter Halbleiteranordnungen | |
| DE2841230C2 (de) | Programmierbare Speicherzelle mit Halbleiterdioden | |
| DE2729171C2 (de) | Verfahren zur Herstellung einer integrierten Schaltung | |
| DE2823967C2 (es) | ||
| DE1439935A1 (de) | Halbleitereinrichtung und Verfahren zu deren Herstellung | |
| DE2749607C3 (de) | Halbleiteranordnung und Verfahren zu deren Herstellung | |
| DE3202608C2 (es) | ||
| EP0001574B1 (de) | Halbleiteranordnung für Widerstandsstrukturen in hochintegrierten Schaltkreisen und Verfahren zur Herstellung dieser Halbleiteranordnung | |
| DE2711562A1 (de) | Halbleiteranordnung und deren herstellung | |
| DE3131991A1 (de) | "zenerdiode und verfahren zu ihrer herstellung" | |
| DE1544329A1 (de) | Verfahren zur Herstellung epitaxialer Schichten bestimmter Form | |
| DE2615754C2 (es) | ||
| DE3116268C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE2655341A1 (de) | Halbleiteranordnung mit passivierter oberflaeche und verfahren zur herstellung dieser anordnung | |
| DE2517690A1 (de) | Verfahren zum herstellen eines halbleiterbauteils | |
| DE2546314A1 (de) | Feldeffekt-transistorstruktur und verfahren zur herstellung | |
| DE2605830A1 (de) | Verfahren zur herstellung von halbleiterbauelementen | |
| DE1130932B (de) | Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren | |
| DE2235185A1 (de) | Monolithische integrierte schaltung | |
| DE2643016A1 (de) | Verfahren zur herstellung eines integrierten halbleiterkreises | |
| DE2904480A1 (de) | Integrierte halbleiterschaltung und verfahren zu ihrem herstellen | |
| DE2800363C2 (de) | Halbleiteranordnung und Verfahren zu deren Herstellung | |
| DE2510951C3 (de) | Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung | |
| DE1644025A1 (de) | Halbleiter-Anordnung mit diffundierten Zonenuebergaengen | |
| DE2802048C2 (es) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
| 8339 | Ceased/non-payment of the annual fee |