IT1139373B - Diodo zener e metodo di fabbricazione dello stesso - Google Patents
Diodo zener e metodo di fabbricazione dello stessoInfo
- Publication number
- IT1139373B IT1139373B IT23532/81A IT2353281A IT1139373B IT 1139373 B IT1139373 B IT 1139373B IT 23532/81 A IT23532/81 A IT 23532/81A IT 2353281 A IT2353281 A IT 2353281A IT 1139373 B IT1139373 B IT 1139373B
- Authority
- IT
- Italy
- Prior art keywords
- zener diode
- manufacturing itself
- itself
- manufacturing
- zener
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE8004651,A NL187942C (nl) | 1980-08-18 | 1980-08-18 | Zenerdiode en werkwijze ter vervaardiging daarvan. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8123532A0 IT8123532A0 (it) | 1981-08-14 |
IT1139373B true IT1139373B (it) | 1986-09-24 |
Family
ID=19835744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT23532/81A IT1139373B (it) | 1980-08-18 | 1981-08-14 | Diodo zener e metodo di fabbricazione dello stesso |
Country Status (7)
Country | Link |
---|---|
US (1) | US4429324A (it) |
JP (1) | JPS5771186A (it) |
DE (1) | DE3131991C2 (it) |
FR (1) | FR2488734B1 (it) |
GB (1) | GB2082386B (it) |
IT (1) | IT1139373B (it) |
NL (1) | NL187942C (it) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4631562A (en) * | 1985-05-31 | 1986-12-23 | Rca Corporation | Zener diode structure |
US4651178A (en) * | 1985-05-31 | 1987-03-17 | Rca Corporation | Dual inverse zener diode with buried junctions |
JP2561104B2 (ja) * | 1987-12-11 | 1996-12-04 | 富士通株式会社 | 半導体基板の湿式処理装置 |
JPH0642555B2 (ja) * | 1989-06-20 | 1994-06-01 | 株式会社東芝 | 半導体装置 |
DE4130247A1 (de) * | 1991-09-12 | 1993-03-18 | Bosch Gmbh Robert | Halbleiteranordnung und verfahren zu deren herstellung |
DE69228046T2 (de) * | 1991-12-16 | 1999-07-01 | Koninklijke Philips Electronics N.V., Eindhoven | Zener-Diode mit Bezugs- und Schutzdiode |
US7166528B2 (en) | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
CN103981568A (zh) * | 2006-07-31 | 2014-08-13 | 应用材料公司 | 形成含碳外延硅层的方法 |
WO2008033186A1 (en) * | 2006-07-31 | 2008-03-20 | Applied Materials, Inc. | Methods of controlling morphology during epitaxial layer formation |
CN104508806B (zh) * | 2012-09-27 | 2018-02-27 | 罗姆股份有限公司 | 片状二极管及其制造方法、电路组件及电子设备 |
US10468402B1 (en) * | 2018-07-25 | 2019-11-05 | Semiconductor Components Industries, Llc | Trench diode and method of forming the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1522532A (fr) * | 1967-03-17 | 1968-04-26 | Europ Des Semiconducteurs Soc | Perfectionnements aux diodes zener |
DE2026683B2 (de) * | 1970-06-01 | 1973-11-08 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Zenerdiode |
FR2096859B2 (it) * | 1970-07-07 | 1973-11-16 | Sescosem | |
DE2207654B2 (de) * | 1972-02-18 | 1974-02-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Herstellen einer Zenerdiode |
JPS4999284A (it) * | 1973-01-27 | 1974-09-19 | ||
JPS511586A (ja) * | 1974-06-26 | 1976-01-08 | Toyo Kogyo Co | Kariugomutokinzokutono setsuchakuhoho |
US4030117A (en) * | 1975-03-10 | 1977-06-14 | International Telephone And Telegraph Corporation | Zener diode |
FR2454704A1 (fr) * | 1979-04-20 | 1980-11-14 | Thomson Csf | Diode a avalanche de type planar a tension de claquage comprise entre 4 et 8 volts |
-
1980
- 1980-08-18 NL NLAANVRAGE8004651,A patent/NL187942C/xx not_active IP Right Cessation
-
1981
- 1981-07-20 US US06/284,436 patent/US4429324A/en not_active Expired - Fee Related
- 1981-08-13 DE DE3131991A patent/DE3131991C2/de not_active Expired
- 1981-08-14 IT IT23532/81A patent/IT1139373B/it active
- 1981-08-14 GB GB8124868A patent/GB2082386B/en not_active Expired
- 1981-08-17 JP JP56128656A patent/JPS5771186A/ja active Pending
- 1981-08-17 FR FR8115820A patent/FR2488734B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4429324A (en) | 1984-01-31 |
IT8123532A0 (it) | 1981-08-14 |
GB2082386A (en) | 1982-03-03 |
NL187942C (nl) | 1992-02-17 |
NL8004651A (nl) | 1982-03-16 |
DE3131991A1 (de) | 1982-04-29 |
JPS5771186A (en) | 1982-05-01 |
FR2488734B1 (fr) | 1986-08-29 |
FR2488734A1 (fr) | 1982-02-19 |
DE3131991C2 (de) | 1987-01-02 |
NL187942B (nl) | 1991-09-16 |
GB2082386B (en) | 1984-08-15 |
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