DE3578485D1 - Rauscharme zenerdiode und verfahren. - Google Patents

Rauscharme zenerdiode und verfahren.

Info

Publication number
DE3578485D1
DE3578485D1 DE8585301566T DE3578485T DE3578485D1 DE 3578485 D1 DE3578485 D1 DE 3578485D1 DE 8585301566 T DE8585301566 T DE 8585301566T DE 3578485 T DE3578485 T DE 3578485T DE 3578485 D1 DE3578485 D1 DE 3578485D1
Authority
DE
Germany
Prior art keywords
low
zener diode
noise
noise zener
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585301566T
Other languages
English (en)
Inventor
Jerry Lee Chruma
Gandy, Jr
Tommie Ray Huffman
Syd R Wilson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE3578485D1 publication Critical patent/DE3578485D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Emergency Protection Circuit Devices (AREA)
DE8585301566T 1984-03-12 1985-03-07 Rauscharme zenerdiode und verfahren. Expired - Lifetime DE3578485D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/588,628 US4732866A (en) 1984-03-12 1984-03-12 Method for producing low noise, high grade constant semiconductor junctions

Publications (1)

Publication Number Publication Date
DE3578485D1 true DE3578485D1 (de) 1990-08-02

Family

ID=24354639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585301566T Expired - Lifetime DE3578485D1 (de) 1984-03-12 1985-03-07 Rauscharme zenerdiode und verfahren.

Country Status (5)

Country Link
US (1) US4732866A (de)
EP (1) EP0159129B1 (de)
JP (1) JPS60208868A (de)
KR (1) KR900008819B1 (de)
DE (1) DE3578485D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886762A (en) * 1985-08-06 1989-12-12 Motorola Inc. Monolithic temperature compensated voltage-reference diode and method for its manufacture
FR2608319B1 (fr) * 1986-12-16 1989-04-14 Thomson Semiconducteurs Dispositif de protection contre les surtensions, a jonction plane
US5066599A (en) * 1989-07-27 1991-11-19 Fujitsu Limited Silicon crystal oxygen evaluation method using fourier transform infrared spectroscopy (ftir) and semiconductor device fabrication method using the same
US5986327A (en) * 1989-11-15 1999-11-16 Kabushiki Kaisha Toshiba Bipolar type diode
EP0547675B1 (de) * 1991-12-16 1998-12-30 Koninklijke Philips Electronics N.V. Zener-Diode mit Bezugs- und Schutzdiode
JP3313432B2 (ja) * 1991-12-27 2002-08-12 株式会社東芝 半導体装置及びその製造方法
US5756387A (en) * 1994-12-30 1998-05-26 Sgs-Thomson Microelectronics S.R.L. Method for forming zener diode with high time stability and low noise
EP0720237A1 (de) * 1994-12-30 1996-07-03 STMicroelectronics S.r.l. Zenerdiode für integrierte Schaltungen
US6306676B1 (en) * 1996-04-04 2001-10-23 Eastman Kodak Company Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors
JP3450163B2 (ja) * 1997-09-12 2003-09-22 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US5978710A (en) 1998-01-23 1999-11-02 Sulzer Intermedics Inc. Implantable cardiac stimulator with safe noise mode
EP1672701B1 (de) * 2004-12-15 2012-02-15 LG Electronics, Inc. Verfahren zur Herstellung und zur Verpackung von Zenerdioden
US8399995B2 (en) * 2009-01-16 2013-03-19 Infineon Technologies Ag Semiconductor device including single circuit element for soldering
WO2014050422A1 (ja) * 2012-09-27 2014-04-03 ローム株式会社 チップダイオードおよびその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB921864A (en) * 1960-08-03 1963-03-27 Hoffman Electronics Corp Method for manufacturing diodes
US3293010A (en) * 1964-01-02 1966-12-20 Motorola Inc Passivated alloy diode
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
US3638300A (en) * 1970-05-21 1972-02-01 Bell Telephone Labor Inc Forming impurity regions in semiconductors
US3634738A (en) * 1970-10-06 1972-01-11 Kev Electronics Corp Diode having a voltage variable capacitance characteristic and method of making same
US3856578A (en) * 1972-03-13 1974-12-24 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US4079402A (en) * 1973-07-09 1978-03-14 National Semiconductor Corporation Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
US4030117A (en) * 1975-03-10 1977-06-14 International Telephone And Telegraph Corporation Zener diode
US4155778A (en) * 1977-12-30 1979-05-22 International Business Machines Corporation Forming semiconductor devices having ion implanted and diffused regions
US4393575A (en) * 1979-03-09 1983-07-19 National Semiconductor Corporation Process for manufacturing a JFET with an ion implanted stabilization layer
JPS56100412A (en) * 1979-12-17 1981-08-12 Sony Corp Manufacture of semiconductor device
JPS5728367A (en) * 1980-07-29 1982-02-16 Nec Corp Manufacture of semiconductor device
US4343832A (en) * 1980-10-02 1982-08-10 Motorola, Inc. Semiconductor devices by laser enhanced diffusion
DD157486A1 (de) * 1981-03-20 1982-11-10 Hartwin Obernik Verfahren zur einstellung der durchbruchsspannung in pn-uebergangsdioden

Also Published As

Publication number Publication date
KR900008819B1 (en) 1990-11-30
EP0159129B1 (de) 1990-06-27
KR850006655A (ko) 1985-10-14
JPS60208868A (ja) 1985-10-21
US4732866A (en) 1988-03-22
EP0159129A1 (de) 1985-10-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee