GB921864A - Method for manufacturing diodes - Google Patents

Method for manufacturing diodes

Info

Publication number
GB921864A
GB921864A GB2659561A GB2659561A GB921864A GB 921864 A GB921864 A GB 921864A GB 2659561 A GB2659561 A GB 2659561A GB 2659561 A GB2659561 A GB 2659561A GB 921864 A GB921864 A GB 921864A
Authority
GB
United Kingdom
Prior art keywords
silicon
slices
temperature
diode
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2659561A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoffman Electronics Corp
Original Assignee
Hoffman Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoffman Electronics Corp filed Critical Hoffman Electronics Corp
Publication of GB921864A publication Critical patent/GB921864A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

921,864. Semi-conductor rectifiers. HOFFMAN ELECTRONICS CORPORATION. July 21, 1961 [Aug. 3, 1960], No. 26595/61. Class 37. In a method of making a diffused junction silicon diode having a very low Zener breakdown voltage, impurities are diffused in the gaseous state into the silicon crystal, the crystal then being annealed (i.e. cooled) after which the crystal is reheated and again allowed to cool. It is stated that a diffused junction diode has generally more satisfactory properties than alloyed junction diodes and that the step of reheating and cooling gives such a diode a Zener voltage of the same order as an alloyed junction type. It is also suggested that the mechanism involved is one in which impurity atoms occupying interstitial positions in the crystal lattice are moved to substitutive positions during the reheating. Slices of boron doped silicon 14 are placed in a furnace 12 which is maintained at a temperature of 1250‹ C. Phosphorus pentoxide is placed in a crucible 15 and is evaporated at a temperature of 600‹ C., the gas being carried into furnace 12 by a carrier gas, such as nitrogen, which is pumped through tube 16 at a rate of one litre per minute. After about an hour when a surface concentration of phosphorus of 10<SP>21</SP> atoms per cubic centimetre has been obtained on the silicon slices, the latter are transferred to a chamber 13 initially at 1000‹ C. The furnace is switched off and the silicon slices are removed when the temperature drops to 200 ‹ C. The slices are then placed in another furnace at a temperature of 1250‹ C. for 20-30 minutes after which the temperature is allowed to drop to 200‹ C., the slices then being removed. Figs. 3 and 4 show the effect of re-annealing on a typical silicon diode, t 0 representing the optimum time for maintaining the second furnace at 1250‹ C. and Vz 2 representing the low Zener voltage achieved using this method. For a fourteen mils. thick slice of silicon which is doped with phosphorus so as to have a resistivity of about 0.003 ohm cm., this time t 0 is about 25 minutes. After re-annealing the silicon slices are sand-blasted or lapped to remove the phosphorus layer and are then plated with nickel and also possibly gold. The slices may be cut into smaller units which are then encapsulated to make Zener diodes, or they may be combined with other units e.g. a similar diode connected in the inverse sense, the combination forming a temperature-compensated Zener diode. Specification 907,120 is referred to.
GB2659561A 1960-08-03 1961-07-21 Method for manufacturing diodes Expired GB921864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4721760A 1960-08-03 1960-08-03

Publications (1)

Publication Number Publication Date
GB921864A true GB921864A (en) 1963-03-27

Family

ID=21947714

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2659561A Expired GB921864A (en) 1960-08-03 1961-07-21 Method for manufacturing diodes

Country Status (2)

Country Link
DE (1) DE1180462B (en)
GB (1) GB921864A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4732866A (en) * 1984-03-12 1988-03-22 Motorola Inc. Method for producing low noise, high grade constant semiconductor junctions

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1233559A (en) * 1959-03-25 1960-10-12 Lignes Telegraph Telephon Improvements in semiconductor device manufacturing processes

Also Published As

Publication number Publication date
DE1180462B (en) 1964-10-29

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