FR2608319B1 - Dispositif de protection contre les surtensions, a jonction plane - Google Patents
Dispositif de protection contre les surtensions, a jonction planeInfo
- Publication number
- FR2608319B1 FR2608319B1 FR8617565A FR8617565A FR2608319B1 FR 2608319 B1 FR2608319 B1 FR 2608319B1 FR 8617565 A FR8617565 A FR 8617565A FR 8617565 A FR8617565 A FR 8617565A FR 2608319 B1 FR2608319 B1 FR 2608319B1
- Authority
- FR
- France
- Prior art keywords
- protection against
- against overvoltages
- plane junction
- junction
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8617565A FR2608319B1 (fr) | 1986-12-16 | 1986-12-16 | Dispositif de protection contre les surtensions, a jonction plane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8617565A FR2608319B1 (fr) | 1986-12-16 | 1986-12-16 | Dispositif de protection contre les surtensions, a jonction plane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2608319A1 FR2608319A1 (fr) | 1988-06-17 |
| FR2608319B1 true FR2608319B1 (fr) | 1989-04-14 |
Family
ID=9341935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8617565A Expired FR2608319B1 (fr) | 1986-12-16 | 1986-12-16 | Dispositif de protection contre les surtensions, a jonction plane |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2608319B1 (fr) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4042949A (en) * | 1974-05-08 | 1977-08-16 | Motorola, Inc. | Semiconductor devices |
| DE2916114A1 (de) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | Halbleitervorrichtung |
| JPS5922368A (ja) * | 1982-07-28 | 1984-02-04 | Hitachi Ltd | ツエナ−ダイオ−ドおよびその製造方法 |
| JPS6097659A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体集積回路 |
| US4732866A (en) * | 1984-03-12 | 1988-03-22 | Motorola Inc. | Method for producing low noise, high grade constant semiconductor junctions |
| JPS6115376A (ja) * | 1984-07-02 | 1986-01-23 | Toshiba Corp | 基準電圧ダイオ−ド |
| JPS6189666A (ja) * | 1984-10-09 | 1986-05-07 | Fujitsu Ltd | 半導体装置 |
-
1986
- 1986-12-16 FR FR8617565A patent/FR2608319B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2608319A1 (fr) | 1988-06-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |