DE2954501C2 - - Google Patents

Info

Publication number
DE2954501C2
DE2954501C2 DE2954501A DE2954501A DE2954501C2 DE 2954501 C2 DE2954501 C2 DE 2954501C2 DE 2954501 A DE2954501 A DE 2954501A DE 2954501 A DE2954501 A DE 2954501A DE 2954501 C2 DE2954501 C2 DE 2954501C2
Authority
DE
Germany
Prior art keywords
layer
connecting conductor
connection
region
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2954501A
Other languages
German (de)
English (en)
Inventor
Hiroshi Tokio/Tokyo Jp Shiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1425278A external-priority patent/JPS54107280A/ja
Priority claimed from JP1425178A external-priority patent/JPS54107279A/ja
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE2954501C2 publication Critical patent/DE2954501C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/019—Contacts of silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
DE2954501A 1978-02-10 1979-02-09 Expired - Lifetime DE2954501C2 (en, 2012)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1425278A JPS54107280A (en) 1978-02-10 1978-02-10 Semiconductor integrated circuit unit
JP1425178A JPS54107279A (en) 1978-02-10 1978-02-10 Semiconductor device

Publications (1)

Publication Number Publication Date
DE2954501C2 true DE2954501C2 (en, 2012) 1990-08-30

Family

ID=26350166

Family Applications (3)

Application Number Title Priority Date Filing Date
DE2954502A Expired - Lifetime DE2954502C2 (en, 2012) 1978-02-10 1979-02-09
DE2954501A Expired - Lifetime DE2954501C2 (en, 2012) 1978-02-10 1979-02-09
DE19792905022 Granted DE2905022A1 (de) 1978-02-10 1979-02-09 Integrierte halbleiterschaltung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE2954502A Expired - Lifetime DE2954502C2 (en, 2012) 1978-02-10 1979-02-09

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19792905022 Granted DE2905022A1 (de) 1978-02-10 1979-02-09 Integrierte halbleiterschaltung

Country Status (5)

Country Link
US (2) US4450470A (en, 2012)
DE (3) DE2954502C2 (en, 2012)
FR (1) FR2417187A1 (en, 2012)
GB (4) GB2102625B (en, 2012)
NL (1) NL190710C (en, 2012)

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US4285117A (en) * 1979-09-06 1981-08-25 Teletype Corporation Method of manufacturing a device in a silicon wafer
DE3064143D1 (en) * 1979-12-03 1983-08-18 Ibm Process for producing a vertical pnp transistor and transistor so produced
EP0056186A3 (en) * 1981-01-08 1983-07-20 Texas Instruments Incorporated Integrated circuit device with interconnect-level logic diodes
US4418468A (en) * 1981-05-08 1983-12-06 Fairchild Camera & Instrument Corporation Process for fabricating a logic structure utilizing polycrystalline silicon Schottky diodes
US4584594A (en) * 1981-05-08 1986-04-22 Fairchild Camera & Instrument Corp. Logic structure utilizing polycrystalline silicon Schottky diodes
JPS582068A (ja) * 1981-06-26 1983-01-07 Toshiba Corp 半導体装置およびその製造方法
EP0078221A3 (en) * 1981-10-27 1986-06-11 Fairchild Semiconductor Corporation Polycrystalline silicon diode with metal silicide contact
US4622575A (en) * 1981-10-27 1986-11-11 Fairchild Semiconductor Corporation Integrated circuit bipolar memory cell
US4488350A (en) * 1981-10-27 1984-12-18 Fairchild Camera & Instrument Corp. Method of making an integrated circuit bipolar memory cell
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US4543595A (en) * 1982-05-20 1985-09-24 Fairchild Camera And Instrument Corporation Bipolar memory cell
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JPS5994849A (ja) * 1982-11-24 1984-05-31 Nec Corp 半導体集積回路装置
JPS60130844A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体装置の製造方法
IT1213120B (it) * 1984-01-10 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari a basse tensioni di soglia in circuiti integrati ad alta densita' e struttura da esso risultante.
US4693925A (en) * 1984-03-01 1987-09-15 Advanced Micro Devices, Inc. Integrated circuit structure having intermediate metal silicide layer
US4581815A (en) * 1984-03-01 1986-04-15 Advanced Micro Devices, Inc. Integrated circuit structure having intermediate metal silicide layer and method of making same
KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
US4616404A (en) * 1984-11-30 1986-10-14 Advanced Micro Devices, Inc. Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects
GB2171249A (en) * 1985-02-14 1986-08-20 Siliconix Ltd Improved monolithic integrated circuits
JPH0654795B2 (ja) * 1986-04-07 1994-07-20 三菱電機株式会社 半導体集積回路装置及びその製造方法
KR0120196B1 (ko) * 1987-05-13 1997-10-17 미다 가쓰시게 반도체 집적회로장치 및 그 제조방법
FR2615326B1 (fr) * 1987-05-15 1990-08-31 Fuji Electric Co Ltd Dispositif a semi-conducteurs du type multi-emetteur
WO1989005516A1 (en) * 1987-12-02 1989-06-15 Advanced Micro Devices, Inc. Self-aligned semiconductor devices
US5057902A (en) * 1987-12-02 1991-10-15 Advanced Micro Devices, Inc. Self-aligned semiconductor devices
JPH02502414A (ja) * 1987-12-02 1990-08-02 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド 半導体素子のための自己整列した相互接続
US5045483A (en) * 1990-04-02 1991-09-03 National Semiconductor Corporation Self-aligned silicided base bipolar transistor and resistor and method of fabrication
DE4121051A1 (de) * 1991-06-26 1993-01-07 Eurosil Electronic Gmbh Halbleiteranordnung und verfahren zur herstellung
US5182627A (en) * 1991-09-30 1993-01-26 Sgs-Thomson Microelectronics, Inc. Interconnect and resistor for integrated circuits
US5332913A (en) * 1991-12-17 1994-07-26 Intel Corporation Buried interconnect structure for semiconductor devices
US5478771A (en) * 1993-05-28 1995-12-26 Sgs-Thomson Microelectronics, Inc. Method of forming local interconnect structure without P-N junction between active elements
US5975685A (en) * 1993-12-28 1999-11-02 Canon Kabushiki Kaisha Ink jet recording head having an oriented p-n junction diode, and recording apparatus using the head
US6112699A (en) * 1994-02-28 2000-09-05 Biozyme Systems, Inc. Euphausiid harvesting and processing method and apparatus
US5589415A (en) * 1995-06-07 1996-12-31 Sgs-Thomson Microelectronics, Inc. Method for forming a semiconductor structure with self-aligned contacts
US5670417A (en) * 1996-03-25 1997-09-23 Motorola, Inc. Method for fabricating self-aligned semiconductor component
KR100215841B1 (ko) * 1997-04-10 1999-08-16 구본준 바이폴라소자 제조방법
KR100313940B1 (ko) * 1999-04-02 2001-11-15 김영환 반도체 소자 및 그 제조방법
US6690083B1 (en) * 2000-06-01 2004-02-10 Koninklijke Philips Electronics N.V. Use of silicide blocking layer to create high valued resistor and diode for sub-1V bandgap
US7449099B1 (en) * 2004-04-13 2008-11-11 Novellus Systems, Inc. Selectively accelerated plating of metal features
US20040235258A1 (en) * 2003-05-19 2004-11-25 Wu David Donggang Method of forming resistive structures
JP2009254260A (ja) * 2008-04-15 2009-11-05 Sony Corp 反応処理装置
JP4544335B2 (ja) * 2008-04-15 2010-09-15 ソニー株式会社 反応処理装置

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DE2101609A1 (de) * 1970-10-29 1972-05-04 Rca Corp Kontaktanordnung für Halbleiterbauelemente
DE2518010A1 (de) * 1974-04-26 1975-11-13 Western Electric Co Ic-halbleiterbauelement mit einer injektions-logikzelle
DE2537564A1 (de) * 1974-08-29 1976-03-11 Centre Electron Horloger Integrierte schaltung mit komplementaeren feldeffekt-transistoren
JPH05140866A (ja) * 1991-11-20 1993-06-08 Mitsubishi Rayon Co Ltd ポリエステル吸水性織編物の製法

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US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
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US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
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US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
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DE2101609A1 (de) * 1970-10-29 1972-05-04 Rca Corp Kontaktanordnung für Halbleiterbauelemente
DE2518010A1 (de) * 1974-04-26 1975-11-13 Western Electric Co Ic-halbleiterbauelement mit einer injektions-logikzelle
DE2537564A1 (de) * 1974-08-29 1976-03-11 Centre Electron Horloger Integrierte schaltung mit komplementaeren feldeffekt-transistoren
JPH05140866A (ja) * 1991-11-20 1993-06-08 Mitsubishi Rayon Co Ltd ポリエステル吸水性織編物の製法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM TDB, Bd. 14, 1972, No. 10, S. 3208 *
IBM TDB, Bd. 20, 1977, No. 1, S. 146-148 *

Also Published As

Publication number Publication date
GB2075259A (en) 1981-11-11
NL7901023A (nl) 1979-08-14
FR2417187A1 (fr) 1979-09-07
NL190710B (nl) 1994-02-01
DE2905022C2 (en, 2012) 1990-09-06
GB2070860A (en) 1981-09-09
GB2075259B (en) 1983-02-23
NL190710C (nl) 1994-07-01
GB2014785A (en) 1979-08-30
FR2417187B1 (en, 2012) 1984-12-14
GB2102625A (en) 1983-02-02
GB2070860B (en) 1982-12-22
DE2905022A1 (de) 1979-10-31
GB2014785B (en) 1983-02-02
US4450470A (en) 1984-05-22
GB2102625B (en) 1983-06-29
US5017503A (en) 1991-05-21
DE2954502C2 (en, 2012) 1990-05-03

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