DE112021002169T5 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE112021002169T5
DE112021002169T5 DE112021002169.9T DE112021002169T DE112021002169T5 DE 112021002169 T5 DE112021002169 T5 DE 112021002169T5 DE 112021002169 T DE112021002169 T DE 112021002169T DE 112021002169 T5 DE112021002169 T5 DE 112021002169T5
Authority
DE
Germany
Prior art keywords
region
trench
semiconductor device
semiconductor substrate
trench bottom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021002169.9T
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German (de)
English (en)
Inventor
Toshiyuki Matsui
Kazuki KAMIMURA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE112021002169T5 publication Critical patent/DE112021002169T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
DE112021002169.9T 2020-12-07 2021-10-21 Halbleitervorrichtung Pending DE112021002169T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020202647 2020-12-07
JP2020-202647 2020-12-07
PCT/JP2021/038976 WO2022123923A1 (ja) 2020-12-07 2021-10-21 半導体装置

Publications (1)

Publication Number Publication Date
DE112021002169T5 true DE112021002169T5 (de) 2023-06-29

Family

ID=81972857

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021002169.9T Pending DE112021002169T5 (de) 2020-12-07 2021-10-21 Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US12593500B2 (https=)
JP (2) JP7456520B2 (https=)
CN (1) CN115699331A (https=)
DE (1) DE112021002169T5 (https=)
WO (1) WO2022123923A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116349006A (zh) * 2021-05-11 2023-06-27 富士电机株式会社 半导体装置
JP7593511B2 (ja) * 2022-01-20 2024-12-03 富士電機株式会社 半導体装置
JP7756607B2 (ja) * 2022-08-22 2025-10-20 株式会社東芝 半導体装置及びその製造方法
CN116230752B (zh) * 2023-02-13 2025-09-19 珠海格力电器股份有限公司 逆导型绝缘栅双极晶体管及其制备方法
JPWO2024185313A1 (https=) * 2023-03-07 2024-09-12
JPWO2025004543A1 (https=) * 2023-06-26 2025-01-02
CN117116996B (zh) * 2023-10-24 2024-05-14 合肥海图微电子有限公司 一种功率器件及其制作方法
JP2025132606A (ja) * 2024-02-29 2025-09-10 ミネベアパワーデバイス株式会社 半導体装置、および、電力変換装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175517A (ja) 2013-03-11 2014-09-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2017135339A (ja) 2016-01-29 2017-08-03 株式会社デンソー 半導体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288386A (ja) 2007-05-17 2008-11-27 Hitachi Ltd 半導体装置
JP5922886B2 (ja) * 2011-07-13 2016-05-24 株式会社豊田中央研究所 ダイオードおよび半導体装置
DE112012007322B3 (de) * 2011-07-27 2022-06-09 Denso Corporation Diode, Halbleitervorrichtung und MOSFET
JP2013051345A (ja) * 2011-08-31 2013-03-14 Toyota Central R&D Labs Inc ダイオード、半導体装置およびｍｏｓｆｅｔ
JP6154292B2 (ja) 2013-11-06 2017-06-28 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6135636B2 (ja) * 2014-10-17 2017-05-31 トヨタ自動車株式会社 半導体装置
JP6728953B2 (ja) 2015-07-16 2020-07-22 富士電機株式会社 半導体装置及びその製造方法
JP6658021B2 (ja) 2016-02-03 2020-03-04 株式会社デンソー 半導体装置
DE102017107174B4 (de) 2017-04-04 2020-10-08 Infineon Technologies Ag IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT
JP6946922B2 (ja) * 2017-10-18 2021-10-13 株式会社デンソー 半導体装置
DE102017124871B4 (de) 2017-10-24 2021-06-17 Infineon Technologies Ag Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung
JP7091714B2 (ja) * 2018-03-01 2022-06-28 株式会社デンソー 半導体装置
US11728333B2 (en) * 2018-05-30 2023-08-15 Rohm Co., Ltd. Semiconductor device
WO2020031551A1 (ja) * 2018-08-10 2020-02-13 富士電機株式会社 半導体装置
JP7327672B2 (ja) * 2020-07-03 2023-08-16 富士電機株式会社 半導体装置
JP7574558B2 (ja) * 2020-07-13 2024-10-29 富士電機株式会社 半導体装置
JP7370309B2 (ja) * 2020-10-21 2023-10-27 三菱電機株式会社 逆導通型半導体装置および逆導通型半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175517A (ja) 2013-03-11 2014-09-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2017135339A (ja) 2016-01-29 2017-08-03 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
US12593500B2 (en) 2026-03-31
US20230071170A1 (en) 2023-03-09
JPWO2022123923A1 (https=) 2022-06-16
JP7456520B2 (ja) 2024-03-27
JP7758079B2 (ja) 2025-10-22
CN115699331A (zh) 2023-02-03
JP2024060027A (ja) 2024-05-01
WO2022123923A1 (ja) 2022-06-16

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