JPWO2022123923A1 - - Google Patents
Info
- Publication number
- JPWO2022123923A1 JPWO2022123923A1 JP2022568089A JP2022568089A JPWO2022123923A1 JP WO2022123923 A1 JPWO2022123923 A1 JP WO2022123923A1 JP 2022568089 A JP2022568089 A JP 2022568089A JP 2022568089 A JP2022568089 A JP 2022568089A JP WO2022123923 A1 JPWO2022123923 A1 JP WO2022123923A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/422—PN diodes having the PN junctions in mesas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H10D62/107—Buried supplementary regions, e.g. buried guard rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/129—Cathode regions of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024035840A JP7758079B2 (ja) | 2020-12-07 | 2024-03-08 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020202647 | 2020-12-07 | ||
| JP2020202647 | 2020-12-07 | ||
| PCT/JP2021/038976 WO2022123923A1 (ja) | 2020-12-07 | 2021-10-21 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024035840A Division JP7758079B2 (ja) | 2020-12-07 | 2024-03-08 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022123923A1 true JPWO2022123923A1 (https=) | 2022-06-16 |
| JPWO2022123923A5 JPWO2022123923A5 (https=) | 2023-02-22 |
| JP7456520B2 JP7456520B2 (ja) | 2024-03-27 |
Family
ID=81972857
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022568089A Active JP7456520B2 (ja) | 2020-12-07 | 2021-10-21 | 半導体装置 |
| JP2024035840A Active JP7758079B2 (ja) | 2020-12-07 | 2024-03-08 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024035840A Active JP7758079B2 (ja) | 2020-12-07 | 2024-03-08 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12593500B2 (https=) |
| JP (2) | JP7456520B2 (https=) |
| CN (1) | CN115699331A (https=) |
| DE (1) | DE112021002169T5 (https=) |
| WO (1) | WO2022123923A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116349006A (zh) * | 2021-05-11 | 2023-06-27 | 富士电机株式会社 | 半导体装置 |
| JP7593511B2 (ja) * | 2022-01-20 | 2024-12-03 | 富士電機株式会社 | 半導体装置 |
| JP7756607B2 (ja) * | 2022-08-22 | 2025-10-20 | 株式会社東芝 | 半導体装置及びその製造方法 |
| CN116230752B (zh) * | 2023-02-13 | 2025-09-19 | 珠海格力电器股份有限公司 | 逆导型绝缘栅双极晶体管及其制备方法 |
| JPWO2024185313A1 (https=) * | 2023-03-07 | 2024-09-12 | ||
| JPWO2025004543A1 (https=) * | 2023-06-26 | 2025-01-02 | ||
| CN117116996B (zh) * | 2023-10-24 | 2024-05-14 | 合肥海图微电子有限公司 | 一种功率器件及其制作方法 |
| JP2025132606A (ja) * | 2024-02-29 | 2025-09-10 | ミネベアパワーデバイス株式会社 | 半導体装置、および、電力変換装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008288386A (ja) * | 2007-05-17 | 2008-11-27 | Hitachi Ltd | 半導体装置 |
| JP2013051345A (ja) * | 2011-08-31 | 2013-03-14 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびｍｏｓｆｅｔ |
| JP2015090917A (ja) * | 2013-11-06 | 2015-05-11 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2018182313A (ja) * | 2017-04-04 | 2018-11-15 | インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ | ｄＶ／ｄｔ可制御性を有するＩＧＢＴ |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5922886B2 (ja) * | 2011-07-13 | 2016-05-24 | 株式会社豊田中央研究所 | ダイオードおよび半導体装置 |
| DE112012007322B3 (de) * | 2011-07-27 | 2022-06-09 | Denso Corporation | Diode, Halbleitervorrichtung und MOSFET |
| JP6144510B2 (ja) | 2013-03-11 | 2017-06-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP6135636B2 (ja) * | 2014-10-17 | 2017-05-31 | トヨタ自動車株式会社 | 半導体装置 |
| JP6728953B2 (ja) | 2015-07-16 | 2020-07-22 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| JP6676988B2 (ja) | 2016-01-29 | 2020-04-08 | 株式会社デンソー | 半導体装置 |
| JP6658021B2 (ja) | 2016-02-03 | 2020-03-04 | 株式会社デンソー | 半導体装置 |
| JP6946922B2 (ja) * | 2017-10-18 | 2021-10-13 | 株式会社デンソー | 半導体装置 |
| DE102017124871B4 (de) | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
| JP7091714B2 (ja) * | 2018-03-01 | 2022-06-28 | 株式会社デンソー | 半導体装置 |
| US11728333B2 (en) * | 2018-05-30 | 2023-08-15 | Rohm Co., Ltd. | Semiconductor device |
| WO2020031551A1 (ja) * | 2018-08-10 | 2020-02-13 | 富士電機株式会社 | 半導体装置 |
| JP7327672B2 (ja) * | 2020-07-03 | 2023-08-16 | 富士電機株式会社 | 半導体装置 |
| JP7574558B2 (ja) * | 2020-07-13 | 2024-10-29 | 富士電機株式会社 | 半導体装置 |
| JP7370309B2 (ja) * | 2020-10-21 | 2023-10-27 | 三菱電機株式会社 | 逆導通型半導体装置および逆導通型半導体装置の製造方法 |
-
2021
- 2021-10-21 JP JP2022568089A patent/JP7456520B2/ja active Active
- 2021-10-21 CN CN202180039434.0A patent/CN115699331A/zh active Pending
- 2021-10-21 WO PCT/JP2021/038976 patent/WO2022123923A1/ja not_active Ceased
- 2021-10-21 DE DE112021002169.9T patent/DE112021002169T5/de active Pending
-
2022
- 2022-11-16 US US18/055,843 patent/US12593500B2/en active Active
-
2024
- 2024-03-08 JP JP2024035840A patent/JP7758079B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008288386A (ja) * | 2007-05-17 | 2008-11-27 | Hitachi Ltd | 半導体装置 |
| JP2013051345A (ja) * | 2011-08-31 | 2013-03-14 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびｍｏｓｆｅｔ |
| JP2015090917A (ja) * | 2013-11-06 | 2015-05-11 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2018182313A (ja) * | 2017-04-04 | 2018-11-15 | インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ | ｄＶ／ｄｔ可制御性を有するＩＧＢＴ |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112021002169T5 (de) | 2023-06-29 |
| US12593500B2 (en) | 2026-03-31 |
| US20230071170A1 (en) | 2023-03-09 |
| JP7456520B2 (ja) | 2024-03-27 |
| JP7758079B2 (ja) | 2025-10-22 |
| CN115699331A (zh) | 2023-02-03 |
| JP2024060027A (ja) | 2024-05-01 |
| WO2022123923A1 (ja) | 2022-06-16 |
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