JPWO2022123923A5 - - Google Patents
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- Publication number
- JPWO2022123923A5 JPWO2022123923A5 JP2022568089A JP2022568089A JPWO2022123923A5 JP WO2022123923 A5 JPWO2022123923 A5 JP WO2022123923A5 JP 2022568089 A JP2022568089 A JP 2022568089A JP 2022568089 A JP2022568089 A JP 2022568089A JP WO2022123923 A5 JPWO2022123923 A5 JP WO2022123923A5
- Authority
- JP
- Japan
- Prior art keywords
- section
- axis
- region
- tungsten
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024035840A JP7758079B2 (ja) | 2020-12-07 | 2024-03-08 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020202647 | 2020-12-07 | ||
| JP2020202647 | 2020-12-07 | ||
| PCT/JP2021/038976 WO2022123923A1 (ja) | 2020-12-07 | 2021-10-21 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024035840A Division JP7758079B2 (ja) | 2020-12-07 | 2024-03-08 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022123923A1 JPWO2022123923A1 (https=) | 2022-06-16 |
| JPWO2022123923A5 true JPWO2022123923A5 (https=) | 2023-02-22 |
| JP7456520B2 JP7456520B2 (ja) | 2024-03-27 |
Family
ID=81972857
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022568089A Active JP7456520B2 (ja) | 2020-12-07 | 2021-10-21 | 半導体装置 |
| JP2024035840A Active JP7758079B2 (ja) | 2020-12-07 | 2024-03-08 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024035840A Active JP7758079B2 (ja) | 2020-12-07 | 2024-03-08 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12593500B2 (https=) |
| JP (2) | JP7456520B2 (https=) |
| CN (1) | CN115699331A (https=) |
| DE (1) | DE112021002169T5 (https=) |
| WO (1) | WO2022123923A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116349006A (zh) * | 2021-05-11 | 2023-06-27 | 富士电机株式会社 | 半导体装置 |
| JP7593511B2 (ja) * | 2022-01-20 | 2024-12-03 | 富士電機株式会社 | 半導体装置 |
| JP7756607B2 (ja) * | 2022-08-22 | 2025-10-20 | 株式会社東芝 | 半導体装置及びその製造方法 |
| CN116230752B (zh) * | 2023-02-13 | 2025-09-19 | 珠海格力电器股份有限公司 | 逆导型绝缘栅双极晶体管及其制备方法 |
| JPWO2024185313A1 (https=) * | 2023-03-07 | 2024-09-12 | ||
| JPWO2025004543A1 (https=) * | 2023-06-26 | 2025-01-02 | ||
| CN117116996B (zh) * | 2023-10-24 | 2024-05-14 | 合肥海图微电子有限公司 | 一种功率器件及其制作方法 |
| JP2025132606A (ja) * | 2024-02-29 | 2025-09-10 | ミネベアパワーデバイス株式会社 | 半導体装置、および、電力変換装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008288386A (ja) | 2007-05-17 | 2008-11-27 | Hitachi Ltd | 半導体装置 |
| JP5922886B2 (ja) * | 2011-07-13 | 2016-05-24 | 株式会社豊田中央研究所 | ダイオードおよび半導体装置 |
| DE112012007322B3 (de) * | 2011-07-27 | 2022-06-09 | Denso Corporation | Diode, Halbleitervorrichtung und MOSFET |
| JP2013051345A (ja) * | 2011-08-31 | 2013-03-14 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびｍｏｓｆｅｔ |
| JP6144510B2 (ja) | 2013-03-11 | 2017-06-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP6154292B2 (ja) | 2013-11-06 | 2017-06-28 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6135636B2 (ja) * | 2014-10-17 | 2017-05-31 | トヨタ自動車株式会社 | 半導体装置 |
| JP6728953B2 (ja) | 2015-07-16 | 2020-07-22 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| JP6676988B2 (ja) | 2016-01-29 | 2020-04-08 | 株式会社デンソー | 半導体装置 |
| JP6658021B2 (ja) | 2016-02-03 | 2020-03-04 | 株式会社デンソー | 半導体装置 |
| DE102017107174B4 (de) | 2017-04-04 | 2020-10-08 | Infineon Technologies Ag | IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT |
| JP6946922B2 (ja) * | 2017-10-18 | 2021-10-13 | 株式会社デンソー | 半導体装置 |
| DE102017124871B4 (de) | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
| JP7091714B2 (ja) * | 2018-03-01 | 2022-06-28 | 株式会社デンソー | 半導体装置 |
| US11728333B2 (en) * | 2018-05-30 | 2023-08-15 | Rohm Co., Ltd. | Semiconductor device |
| WO2020031551A1 (ja) * | 2018-08-10 | 2020-02-13 | 富士電機株式会社 | 半導体装置 |
| JP7327672B2 (ja) * | 2020-07-03 | 2023-08-16 | 富士電機株式会社 | 半導体装置 |
| JP7574558B2 (ja) * | 2020-07-13 | 2024-10-29 | 富士電機株式会社 | 半導体装置 |
| JP7370309B2 (ja) * | 2020-10-21 | 2023-10-27 | 三菱電機株式会社 | 逆導通型半導体装置および逆導通型半導体装置の製造方法 |
-
2021
- 2021-10-21 JP JP2022568089A patent/JP7456520B2/ja active Active
- 2021-10-21 CN CN202180039434.0A patent/CN115699331A/zh active Pending
- 2021-10-21 WO PCT/JP2021/038976 patent/WO2022123923A1/ja not_active Ceased
- 2021-10-21 DE DE112021002169.9T patent/DE112021002169T5/de active Pending
-
2022
- 2022-11-16 US US18/055,843 patent/US12593500B2/en active Active
-
2024
- 2024-03-08 JP JP2024035840A patent/JP7758079B2/ja active Active
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