JPWO2021251011A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2021251011A5
JPWO2021251011A5 JP2022530049A JP2022530049A JPWO2021251011A5 JP WO2021251011 A5 JPWO2021251011 A5 JP WO2021251011A5 JP 2022530049 A JP2022530049 A JP 2022530049A JP 2022530049 A JP2022530049 A JP 2022530049A JP WO2021251011 A5 JPWO2021251011 A5 JP WO2021251011A5
Authority
JP
Japan
Prior art keywords
region
semiconductor device
transistor
boundary
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022530049A
Other languages
English (en)
Japanese (ja)
Other versions
JP7384287B2 (ja
JPWO2021251011A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2021/016322 external-priority patent/WO2021251011A1/ja
Publication of JPWO2021251011A1 publication Critical patent/JPWO2021251011A1/ja
Publication of JPWO2021251011A5 publication Critical patent/JPWO2021251011A5/ja
Application granted granted Critical
Publication of JP7384287B2 publication Critical patent/JP7384287B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022530049A 2020-06-09 2021-04-22 半導体装置 Active JP7384287B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020100458 2020-06-09
JP2020100458 2020-06-09
PCT/JP2021/016322 WO2021251011A1 (ja) 2020-06-09 2021-04-22 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021251011A1 JPWO2021251011A1 (https=) 2021-12-16
JPWO2021251011A5 true JPWO2021251011A5 (https=) 2022-07-26
JP7384287B2 JP7384287B2 (ja) 2023-11-21

Family

ID=78845539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022530049A Active JP7384287B2 (ja) 2020-06-09 2021-04-22 半導体装置

Country Status (5)

Country Link
US (1) US20220278094A1 (https=)
JP (1) JP7384287B2 (https=)
CN (1) CN114730805A (https=)
DE (1) DE112021000166B4 (https=)
WO (1) WO2021251011A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7446198B2 (ja) * 2020-10-01 2024-03-08 三菱電機株式会社 半導体装置
DE112023000330T5 (de) * 2022-07-11 2024-08-14 Fuji Electric Co., Ltd. Halbleitervorrichtung und verfahren zum herstellen einer halbleitervorrichtung
WO2024214461A1 (ja) * 2023-04-14 2024-10-17 富士電機株式会社 半導体装置
CN119092488B (zh) * 2024-11-06 2025-04-01 杭州士兰集昕微电子有限公司 半导体器件及其制造方法、半导体器件的设计方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011210800A (ja) * 2010-03-29 2011-10-20 Toyota Motor Corp 半導体装置
JP6144510B2 (ja) 2013-03-11 2017-06-07 三菱電機株式会社 半導体装置の製造方法
JP6384425B2 (ja) * 2015-08-21 2018-09-05 株式会社デンソー 半導体装置
JP6676988B2 (ja) * 2016-01-29 2020-04-08 株式会社デンソー 半導体装置
JP6614326B2 (ja) * 2016-02-15 2019-12-04 富士電機株式会社 半導体装置
US10559663B2 (en) * 2016-10-14 2020-02-11 Fuji Electric Co., Ltd. Semiconductor device with improved current flow distribution
CN109314134B (zh) * 2016-12-16 2021-11-05 富士电机株式会社 半导体装置及制造方法
JP7325167B2 (ja) * 2017-03-16 2023-08-14 富士電機株式会社 半導体装置の製造方法
CN110546767B (zh) * 2017-11-15 2022-07-29 富士电机株式会社 半导体装置
WO2019111572A1 (ja) * 2017-12-06 2019-06-13 富士電機株式会社 半導体装置
JP7001104B2 (ja) * 2017-12-14 2022-01-19 富士電機株式会社 半導体装置
JP7131003B2 (ja) * 2018-03-16 2022-09-06 富士電機株式会社 半導体装置
JP7181520B2 (ja) * 2018-06-25 2022-12-01 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2020031155A (ja) * 2018-08-23 2020-02-27 トヨタ自動車株式会社 半導体装置
DE112019008041B4 (de) * 2018-10-18 2026-02-05 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon
JP7268330B2 (ja) * 2018-11-05 2023-05-08 富士電機株式会社 半導体装置および製造方法

Similar Documents

Publication Publication Date Title
JPWO2021251011A5 (https=)
JP7743901B2 (ja) 半導体装置
US11094808B2 (en) Semiconductor device
JP6747593B2 (ja) 半導体装置
CN104995737B (zh) 半导体装置
JPWO2022239285A5 (https=)
JP6854598B2 (ja) 半導体装置
JP5886548B2 (ja) 半導体装置
CN107293579A (zh) 一种具有低导通压降的超结igbt
JP2024060027A5 (https=)
JP6192686B2 (ja) 半導体装置
JP2020177973A (ja) 半導体装置
JP6677615B2 (ja) 半導体装置
JPWO2021145080A5 (https=)
JPWO2022239284A5 (https=)
JP6658955B2 (ja) 半導体装置
JP6992476B2 (ja) 半導体装置
JP2022179212A (ja) 半導体装置
CN104335346B (zh) 用于esd保护的半导体器件
US8552467B2 (en) Four-quadrant triac
JP5568904B2 (ja) 半導体装置
JP6455169B2 (ja) 半導体装置
JP2021093556A (ja) Ｒｃ−ｉｇｂｔ半導体装置
JP5375270B2 (ja) 半導体装置
JP2016149429A (ja) 逆導通ｉｇｂｔ