JP2024060027A5 - - Google Patents

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Publication number
JP2024060027A5
JP2024060027A5 JP2024035840A JP2024035840A JP2024060027A5 JP 2024060027 A5 JP2024060027 A5 JP 2024060027A5 JP 2024035840 A JP2024035840 A JP 2024035840A JP 2024035840 A JP2024035840 A JP 2024035840A JP 2024060027 A5 JP2024060027 A5 JP 2024060027A5
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JP
Japan
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region
bottom region
semiconductor device
type
transistor
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JP2024035840A
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English (en)
Japanese (ja)
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JP2024060027A (ja
JP7758079B2 (ja
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Priority claimed from JP2022568089A external-priority patent/JP7456520B2/ja
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Publication of JP2024060027A publication Critical patent/JP2024060027A/ja
Publication of JP2024060027A5 publication Critical patent/JP2024060027A5/ja
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Publication of JP7758079B2 publication Critical patent/JP7758079B2/ja
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JP2024035840A 2020-12-07 2024-03-08 半導体装置 Active JP7758079B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020202647 2020-12-07
JP2020202647 2020-12-07
JP2022568089A JP7456520B2 (ja) 2020-12-07 2021-10-21 半導体装置
PCT/JP2021/038976 WO2022123923A1 (ja) 2020-12-07 2021-10-21 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2022568089A Division JP7456520B2 (ja) 2020-12-07 2021-10-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2024060027A JP2024060027A (ja) 2024-05-01
JP2024060027A5 true JP2024060027A5 (https=) 2024-05-22
JP7758079B2 JP7758079B2 (ja) 2025-10-22

Family

ID=81972857

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022568089A Active JP7456520B2 (ja) 2020-12-07 2021-10-21 半導体装置
JP2024035840A Active JP7758079B2 (ja) 2020-12-07 2024-03-08 半導体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2022568089A Active JP7456520B2 (ja) 2020-12-07 2021-10-21 半導体装置

Country Status (5)

Country Link
US (1) US12593500B2 (https=)
JP (2) JP7456520B2 (https=)
CN (1) CN115699331A (https=)
DE (1) DE112021002169T5 (https=)
WO (1) WO2022123923A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116349006A (zh) * 2021-05-11 2023-06-27 富士电机株式会社 半导体装置
EP4350777A4 (en) * 2022-01-20 2024-11-27 Fuji Electric Co., Ltd. Semiconductor device
JP7756607B2 (ja) * 2022-08-22 2025-10-20 株式会社東芝 半導体装置及びその製造方法
CN116230752B (zh) * 2023-02-13 2025-09-19 珠海格力电器股份有限公司 逆导型绝缘栅双极晶体管及其制备方法
DE112024000109T5 (de) * 2023-03-07 2025-06-05 Fuji Electric Co., Ltd. Halbleitervorrichtung und verfahren zum herstellen einer halbleitervorrichtung
WO2025004543A1 (ja) * 2023-06-26 2025-01-02 ローム株式会社 半導体装置
CN117116996B (zh) * 2023-10-24 2024-05-14 合肥海图微电子有限公司 一种功率器件及其制作方法
JP2025132606A (ja) * 2024-02-29 2025-09-10 ミネベアパワーデバイス株式会社 半導体装置、および、電力変換装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288386A (ja) * 2007-05-17 2008-11-27 Hitachi Ltd 半導体装置
JP5922886B2 (ja) 2011-07-13 2016-05-24 株式会社豊田中央研究所 ダイオードおよび半導体装置
US9520465B2 (en) * 2011-07-27 2016-12-13 Kabushiki Kaisha Toyota Chuo Kenkyusho Diode, semiconductor device, and MOSFET
JP2013051345A (ja) * 2011-08-31 2013-03-14 Toyota Central R&D Labs Inc ダイオード、半導体装置およびｍｏｓｆｅｔ
JP6144510B2 (ja) 2013-03-11 2017-06-07 三菱電機株式会社 半導体装置の製造方法
JP6154292B2 (ja) 2013-11-06 2017-06-28 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6135636B2 (ja) * 2014-10-17 2017-05-31 トヨタ自動車株式会社 半導体装置
JP6728953B2 (ja) 2015-07-16 2020-07-22 富士電機株式会社 半導体装置及びその製造方法
JP6676988B2 (ja) 2016-01-29 2020-04-08 株式会社デンソー 半導体装置
JP6658021B2 (ja) 2016-02-03 2020-03-04 株式会社デンソー 半導体装置
DE102017107174B4 (de) * 2017-04-04 2020-10-08 Infineon Technologies Ag IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT
JP6946922B2 (ja) * 2017-10-18 2021-10-13 株式会社デンソー 半導体装置
DE102017124871B4 (de) 2017-10-24 2021-06-17 Infineon Technologies Ag Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung
JP7091714B2 (ja) 2018-03-01 2022-06-28 株式会社デンソー 半導体装置
WO2019230851A1 (ja) * 2018-05-30 2019-12-05 ローム株式会社 半導体装置
CN111684604B (zh) * 2018-08-10 2023-08-18 富士电机株式会社 半导体装置
DE112021000202T5 (de) * 2020-07-03 2022-08-18 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP7574558B2 (ja) * 2020-07-13 2024-10-29 富士電機株式会社 半導体装置
JP7370309B2 (ja) * 2020-10-21 2023-10-27 三菱電機株式会社 逆導通型半導体装置および逆導通型半導体装置の製造方法

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