JPWO2025033086A5 - - Google Patents
Info
- Publication number
- JPWO2025033086A5 JPWO2025033086A5 JP2025539222A JP2025539222A JPWO2025033086A5 JP WO2025033086 A5 JPWO2025033086 A5 JP WO2025033086A5 JP 2025539222 A JP2025539222 A JP 2025539222A JP 2025539222 A JP2025539222 A JP 2025539222A JP WO2025033086 A5 JPWO2025033086 A5 JP WO2025033086A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- floating
- trench portion
- portions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023128871 | 2023-08-07 | ||
| PCT/JP2024/024954 WO2025033086A1 (ja) | 2023-08-07 | 2024-07-10 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2025033086A1 JPWO2025033086A1 (https=) | 2025-02-13 |
| JPWO2025033086A5 true JPWO2025033086A5 (https=) | 2025-10-16 |
Family
ID=94534039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025539222A Pending JPWO2025033086A1 (https=) | 2023-08-07 | 2024-07-10 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250351553A1 (https=) |
| JP (1) | JPWO2025033086A1 (https=) |
| CN (1) | CN120570084A (https=) |
| DE (1) | DE112024000313T5 (https=) |
| WO (1) | WO2025033086A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6283468B2 (ja) * | 2013-03-01 | 2018-02-21 | 株式会社豊田中央研究所 | 逆導通ｉｇｂｔ |
| JP7024273B2 (ja) * | 2017-07-14 | 2022-02-24 | 富士電機株式会社 | 半導体装置 |
| CN116349006A (zh) * | 2021-05-11 | 2023-06-27 | 富士电机株式会社 | 半导体装置 |
| CN117099215A (zh) * | 2021-10-15 | 2023-11-21 | 富士电机株式会社 | 半导体装置 |
-
2024
- 2024-07-10 JP JP2025539222A patent/JPWO2025033086A1/ja active Pending
- 2024-07-10 WO PCT/JP2024/024954 patent/WO2025033086A1/ja active Pending
- 2024-07-10 DE DE112024000313.3T patent/DE112024000313T5/de active Pending
- 2024-07-10 CN CN202480008739.9A patent/CN120570084A/zh active Pending
-
2025
- 2025-07-22 US US19/277,332 patent/US20250351553A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2021073733A5 (https=) | ||
| US8232593B2 (en) | Power semiconductor device | |
| JP7327672B2 (ja) | 半導体装置 | |
| US6777783B2 (en) | Insulated gate bipolar transistor | |
| CN101847656B (zh) | 绝缘栅双极性晶体管 | |
| JP2024060027A5 (https=) | ||
| JP2018006648A (ja) | 半導体装置 | |
| WO2011118512A1 (ja) | 絶縁ゲート型バイポーラトランジスタ | |
| US20220384578A1 (en) | Semiconductor device | |
| JPWO2022239285A5 (https=) | ||
| KR100873419B1 (ko) | 높은 항복 전압, 낮은 온 저항 및 작은 스위칭 손실을갖는 전력용 반도체 소자 | |
| JP2023179936A5 (https=) | ||
| JP2023053145A (ja) | Ｒｃ－ｉｇｂｔ半導体装置 | |
| JP2024080143A (ja) | スイッチング素子 | |
| JP5568904B2 (ja) | 半導体装置 | |
| JPWO2025033086A5 (https=) | ||
| JP5879732B2 (ja) | トレンチ絶縁ゲート型半導体装置 | |
| JP7147510B2 (ja) | スイッチング素子 | |
| US20140077258A1 (en) | Semiconductor device | |
| JPWO2023224059A5 (https=) | ||
| CN103839986B (zh) | 绝缘栅双极型晶体管 | |
| US20240136436A1 (en) | silicon carbide semiconductor device | |
| KR100621556B1 (ko) | 전력용 반도체 소자 | |
| JPWO2025033084A5 (https=) | ||
| JPWO2025018064A5 (https=) |