JPWO2025033084A5 - - Google Patents

Info

Publication number
JPWO2025033084A5
JPWO2025033084A5 JP2025539221A JP2025539221A JPWO2025033084A5 JP WO2025033084 A5 JPWO2025033084 A5 JP WO2025033084A5 JP 2025539221 A JP2025539221 A JP 2025539221A JP 2025539221 A JP2025539221 A JP 2025539221A JP WO2025033084 A5 JPWO2025033084 A5 JP WO2025033084A5
Authority
JP
Japan
Prior art keywords
region
semiconductor device
trench portion
contact
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025539221A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025033084A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/024939 external-priority patent/WO2025033084A1/ja
Publication of JPWO2025033084A1 publication Critical patent/JPWO2025033084A1/ja
Publication of JPWO2025033084A5 publication Critical patent/JPWO2025033084A5/ja
Pending legal-status Critical Current

Links

JP2025539221A 2023-08-07 2024-07-10 Pending JPWO2025033084A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023128876 2023-08-07
PCT/JP2024/024939 WO2025033084A1 (ja) 2023-08-07 2024-07-10 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2025033084A1 JPWO2025033084A1 (https=) 2025-02-13
JPWO2025033084A5 true JPWO2025033084A5 (https=) 2025-10-16

Family

ID=94534034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025539221A Pending JPWO2025033084A1 (https=) 2023-08-07 2024-07-10

Country Status (5)

Country Link
US (1) US20250351552A1 (https=)
JP (1) JPWO2025033084A1 (https=)
CN (1) CN120604637A (https=)
DE (1) DE112024000331T5 (https=)
WO (1) WO2025033084A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4500530B2 (ja) * 2003-11-05 2010-07-14 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
US9666666B2 (en) * 2015-05-14 2017-05-30 Alpha And Omega Semiconductor Incorporated Dual-gate trench IGBT with buried floating P-type shield
JP2016162855A (ja) * 2015-02-27 2016-09-05 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
US9825128B2 (en) * 2015-10-20 2017-11-21 Maxpower Semiconductor, Inc. Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings
JP2019012762A (ja) * 2017-06-30 2019-01-24 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP2019040954A (ja) * 2017-08-23 2019-03-14 トヨタ自動車株式会社 半導体装置
JP7210956B2 (ja) * 2017-12-14 2023-01-24 富士電機株式会社 半導体装置
CN113690301B (zh) * 2020-05-18 2024-01-26 华润微电子（重庆）有限公司 半导体器件及其制备方法

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