CN116169166A - 逆导型igbt器件的背面栅结构 - Google Patents

逆导型igbt器件的背面栅结构 Download PDF

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CN116169166A
CN116169166A CN202211710169.7A CN202211710169A CN116169166A CN 116169166 A CN116169166 A CN 116169166A CN 202211710169 A CN202211710169 A CN 202211710169A CN 116169166 A CN116169166 A CN 116169166A
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张镜华
郝知行
杨蜀湘
王宇
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Sichuan Aoku Technology Co ltd
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    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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    • H—ELECTRICITY
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    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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Abstract

本发明公开了一种逆导型IGBT器件的背面栅结构，背面栅结构包括背面P区、背面N区和背面最外侧的集电极，还包括依次设于IGBT器件的正面结构上的漂移层、buffer层和背面绝缘层，背面P区和背面N区均与集电极连接，所所述背面绝缘层用于阻断背面电势区和集电极、背面电势区和背面N区或背面电势区和与背面N区靠近的背面P区相连，当在集电极和发射极之间施加反向电压时，如果反向电压高于背面栅的开启电压，则背面P区形成导电区域，将漂移层、buffer层和集电极相连的背面N区导通，实现反向导通的功能；本发明解决了普通逆导型IGBT正向导通时存在snap‑back问题。

Description

逆导型IGBT器件的背面栅结构
技术领域
本发明涉及半导体芯片技术领域，特别是一种逆导型IGBT器件的背面栅结构。
背景技术
在常规场截止型IGBT中，由于集电极短P+掺杂的存在，不具备反向导通的能力。
逆导型绝缘栅双极型晶体管(Reverse Conducting Insulated Gate BipolarTransistor，RC-IGBT)是一种兼备IGBT功能和反向(逆向)导通功能的器件。
逆导型绝缘栅双极型晶体管能够提高集成度、减小寄身电感、降低封装成本。传统的RC-IGBT在背面槽栅中采用重掺杂的p型多晶硅，利用p型多晶硅与n型漂移区的内建电势来耗尽两个背面槽栅之间的n型漂移区，从而达到消除折回现象的目的。但是构成隧道二极管的P++/N++区的掺杂浓度很高，达到了1E20cm-3～1E21cm-3，工艺难度非常大，IGBT导通时，还是很容易发生如图1所示的折回(snap-back)现象。
发明内容
为解决现有技术中存在的问题，本发明的目的是提供一种逆导型IGBT器件的背面栅结构，本发明解决了普通逆导型IGBT正向导通时存在snap-back问题。
为实现上述目的，本发明采用的技术方案是：一种逆导型IGBT器件的背面栅结构，其特征在于，所述的背面为IGBT器件的集电极所在的区域相对于衬底所在的方向，所述的背面栅结构包括背面P区、背面N区和背面最外侧的集电极，还包括依次设于所述IGBT器件的正面结构上的漂移层、buffer层和背面绝缘层，所述背面P区和背面N区均与所述集电极连接，所述背面绝缘层靠近所述buffer层的一侧形成背面电势区，所述背面绝缘层用于阻断背面电势区和集电极、背面电势区和背面N区或背面电势区和与背面N区靠近的背面P区相连，当在集电极和发射极之间施加反向电压时，如果反向电压低于背面栅的开启电压，则阻断反向导通，在集电极和发射极之间施加反向电压时，如果反向电压高于背面栅的开启电压，则背面P区形成导电区域，将漂移层、buffer层和集电极相连的背面N区导通，实现反向导通的功能。
作为本发明的进一步改进，所述背面绝缘层为沟槽型、平面型、斜面型或曲面型，方向为横向或纵向。
本发明的有益效果是：
本发明提出了一种全新的IGBT结构，采用该结构实现了逆向也可以导通的性能；解决了普通逆导型IGBT正向导通时存在snap-back问题；以及解决了普通逆导型IGBT反向导通时电流在二极管区域内集中，导致芯片局部过热的问题。
附图说明
图1为IGBT器件发生折回(snap-back)现象的Vc-Ic曲线图；
图2为本发明实施例中背面绝缘层为沟槽型的IGBT器件的结构示意图；
图3为本发明实施例中背面绝缘层为平面型的IGBT器件的结构示意图；
图4为本发明实施例中背面绝缘层为斜面型的IGBT器件的结构示意图；
图5为本发明实施例中背面绝缘层为曲面型的IGBT器件的结构示意图；
图6为本发明实施例中RC-IGBT正向导通时的Vg-Ic曲线图；
图7为本发明实施例中RC-IGBT正向导通时的Vc-Ic曲线图；
图8为本发明实施例中RC-IGBT反向导通时的Vc-Ic曲线图；
图9为本发明实施例中RC-IGBT反向导通时的响应曲线图；
图10为本发明实施例中RC-IGBT正向导通时的响应曲线图。
附图标记：
1、集电极，2、背面P区，3、背面N区，4、漂移层，5、buffer层，6、背面绝缘层，7、背面电势区，8、发射极，9、正面N区，10、正面P区，11、栅极，12、正面绝缘层。
具体实施方式
下面结合附图对本发明的实施例进行详细说明。
实施例
如图2-图5所示，一种逆导型IGBT器件的背面栅结构，所述的背面为IGBT器件的集电极1所在的区域相对于衬底所在的方向，所述的背面栅结构包括背面P区2、背面N区3和背面最外侧的集电极1，还包括依次设于所述IGBT器件的正面结构上的漂移层4、buffer层5和背面绝缘层6，所述背面P区2和背面N区3均与所述集电极1连接，所述背面绝缘层6靠近所述buffer层5的一侧形成背面电势区7，所述背面绝缘层6用于阻断背面电势区7和集电极1、背面电势区7和背面N区3或背面电势区7和与背面N区3靠近的背面P区2相连，当在集电极1和发射极8之间施加反向电压时，如果反向电压低于背面栅的开启电压，则阻断反向导通，在集电极1和发射极8之间施加反向电压时，如果反向电压高于背面栅的开启电压，则背面P区2形成导电区域，将漂移层4、buffer层5和集电极1相连的背面N区3导通，实现反向导通的功能；所述背面绝缘层6可以为沟槽型、平面型、斜面型或曲面型，方向为横向或纵向。
再如图2-图5所示，图2-图5分别为背面绝缘层6为沟槽型、平面型、斜面型或曲面型时RC-IGBT结构示意图，在图2-图5中，RC-IGBT的正面结构均相同，其包括发射极8、正面N区9、正面P区10、栅极11和正面绝缘层12。
本实施例的不同结构具有不同的参数效果，图6-图10是符合本实施例的一种结构的仿真效果。
下面对本实施例作进一步说明：
本实施例指定的背面定义为IGBT的集电极1所在的区域相对于衬底所在的方向。其他的方位描述只要符合IGBT的集电极1所在的面均在专利的权利范围。
所述背面栅结构包括：背面电势区7，背面电势区7紧邻背面绝缘层6，背面电势区7和衬底相连的部分可以和衬底的材质一样(N型或P型)，也可以是导电物质。如果材质一样，掺杂浓度可以相同或者不同。
所述背面栅结构包括：背面绝缘区，也称背面绝缘层6，背面绝缘层6可以是沟槽型，也可以是平面型，可以是横向，可以是纵向，可以是斜面型的，也可以是曲面型的，但不限于这些形状。背面绝缘层6的深度即可以深入到截止层，也可以深入到飘移层，背面绝缘层6的厚度决定了逆向导通电压。背面绝缘层6，阻断背面电势区7和集电极1相连。背面绝缘层6阻断背面电势区7和背面N区3相连。背面绝缘层6阻断背面电势区7和与背面N区3靠近的背面P区2相连。
所述背面栅结构包括：背面P区2和背面N区3，背面P区2连接IGBT的集电极1，另外在IGBT的集电极1和发射极8之间施加反向电压时，如果反向电压低于背面栅的开启电压，则阻断反向导通。所述背面栅结构包括：背面N区3，背面N区3连接到IGBT的集电极1，在IGBT的集电极1和发射极8之间施加反向电压时，如果反向电压高于背面栅的开启电压，则靠近栅极11的背面P区2形成导电区域，将漂移层4、buffer层5和集电极1相连的背面N区3导通，实现反向导通的功能。
以上所述实施例仅表达了本发明的具体实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。

Claims (2)

1.一种逆导型IGBT器件的背面栅结构，其特征在于，所述的背面为IGBT器件的集电极所在的区域相对于衬底所在的方向，所述的背面栅结构包括背面P区、背面N区和背面最外侧的集电极，还包括依次设于所述IGBT器件的正面结构上的漂移层、buffer层和背面绝缘层，所述背面P区和背面N区均与所述集电极连接，所述背面绝缘层靠近所述buffer层的一侧形成背面电势区，所述背面绝缘层用于阻断背面电势区和集电极、背面电势区和背面N区或背面电势区和与背面N区靠近的背面P区相连，当在集电极和发射极之间施加反向电压时，如果反向电压低于背面栅的开启电压，则阻断反向导通，在集电极和发射极之间施加反向电压时，如果反向电压高于背面栅的开启电压，则背面P区形成导电区域，将漂移层、buffer层和集电极相连的背面N区导通，实现反向导通的功能。
2.根据权利要求1所述的逆导型IGBT器件的背面栅结构，其特征在于，所述背面绝缘层为沟槽型、平面型、斜面型或曲面型，方向为横向或纵向。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116525656A (zh) * 2023-07-04 2023-08-01 四川奥库科技有限公司 集电极侧含有浮空区的逆导型igbt器件

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116525656A (zh) * 2023-07-04 2023-08-01 四川奥库科技有限公司 集电极侧含有浮空区的逆导型igbt器件
CN116525656B (zh) * 2023-07-04 2023-10-03 四川奥库科技有限公司 集电极侧含有浮空区的逆导型igbt器件

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