US20180269202A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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US20180269202A1
US20180269202A1 US15/883,537 US201815883537A US2018269202A1 US 20180269202 A1 US20180269202 A1 US 20180269202A1 US 201815883537 A US201815883537 A US 201815883537A US 2018269202 A1 US2018269202 A1 US 2018269202A1
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trench structures
emitter
regions
element region
electrode
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US10763252B2 (en
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Akio Yamano
Misaki Takahashi
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0664—Vertical bipolar transistor in combination with diodes
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes

Definitions

  • Embodiments of the invention related to a semiconductor device used in power converting equipment.
  • insulated gate bipolar transistors IGBTs
  • FWDs free wheeling diodes
  • a conventional technique discloses a structure of an RC-IGBT including plural first gate trenches arranged in a width direction of an IGBT region and plural second gate trenches extending in a direction intersecting with the first gate trenches, in which the first gate trenches and the second gate trenches are not in contact with each other (for example, see Japanese Laid-Open Patent Publication No. 2015-138789).
  • a conventional configuration in which an on-potential is applied only to electrodes of either the first gate trenches or the second gate trenches and the other electrodes are caused to float has been disclosed.
  • a semiconductor device includes a first element region in which an insulated gate bipolar transistor is provided; a second element region in which a diode is provided, the first element region and the second element region being located on a semiconductor substrate constituting a drift layer of a first conductivity type; gate trench structures provided on a front surface side of the first element region; and floating trench structures provided on a front surface side of the second element region.
  • the gate trench structures each has an electrode based on a gate potential, the electrode being provided in the gate trench structures.
  • the floating trench structures each has an electrode having a floating potential, the electrode being provided in the floating trench structures.
  • each of a plurality of trench structures including the gate trench structures and the floating trench structures includes a trench and an insulating film provided in the trench, the electrode being provided on the insulating film.
  • the trench structures further include emitter trench structures provided on the front surface side of the second element region.
  • the emitter trench structures each has an electrode based on an emitter potential, the electrode being provided in the emitter trench structures.
  • the semiconductor device further includes an interlayer insulating film provided on the trench structures in the first element region and the second element region, and an emitter electrode provided on the interlayer insulating film.
  • the interlayer insulating film includes contact holes.
  • the emitter trench structures have end portions connected with the emitter electrode by the contact holes.
  • the floating trench structures are insulated from the emitter electrode by the interlayer insulating film.
  • the semiconductor device further includes a collector electrode on a rear surface of the semiconductor substrate.
  • a gate capacitance CdsT between the emitter trench structures and the floating trench structures, and the collector electrode satisfies CdsT/CdsT 0 ⁇ 3 ⁇ 4 where a gate capacitance in a case where only the first element region is provided in the semiconductor device and the trench structures in the first element region are all the emitter trench structures is CdsT 0 .
  • the emitter trench structures or the floating trench structures are provided also in the first element region.
  • the first element region includes a base region of a second conductivity type provided between the trench structures that are adjacent in the first element region, and an emitter region of the first conductivity type provided on the base region.
  • the floating trench structures are larger in number in the second element region than in the first element region.
  • the semiconductor device further includes a channel-stop layer of the first conductivity type, an impurity concentration of the channel-stop layer being higher than an impurity concentration of the drift layer only in the first element region, or in the first element region and the second element region on a front surface side of the drift layer.
  • FIGS. 1A and 1B are sectional views depicting a configuration example of an RC-IGBT according to a first embodiment
  • FIG. 2 is a plan view of the RC-IGBT according to the first embodiment
  • FIG. 3 is a sectional view of an end portion of a floating trench structure in the RC-IGBT of the first embodiment
  • FIG. 4 is a sectional view of another end portion of the floating trench structure in the RC-IGBT of the first embodiment
  • FIGS. 5 and 6 are sectional views depicting other configuration examples of the RC-IGBT of the first embodiment
  • FIG. 7 is a sectional view depicting a configuration example of an RC-IGBT according to a second embodiment
  • FIG. 8 is a sectional view of a configuration of a RC-IGBT according to a comparative example
  • FIGS. 9 and 10 are schematic diagrams of an end portion of an emitter trench structure in the RC-IGBT according to the comparative example.
  • FIG. 11 is a sectional view for explaining a problem of the RC-IGBT according to the comparative example.
  • the conventional RC-IGBT has a problem in that the voltage at the time of turn-on has a tailing shape and turn-on power loss Eon becomes larger than that of a semiconductor device including an IGBT and an FWD separately.
  • n-type is a first conductivity type and a p-type is a second conductivity type.
  • a configuration of an RC-IGBT according to a comparative example is described using, as an example, a configuration of an active region in which an IGBT and an FWD are incorporated and integrated on a single semiconductor chip.
  • FIG. 8 is a sectional view of a configuration of the RC-IGBT according to the comparative example.
  • IGBT regions 121 and FWD regions 122 are provided adjacently with boundaries O interposed therebetween.
  • the boundaries O are, for example, boundaries between p + -type collector regions 131 and n + -type cathode regions 132 .
  • a MOS (metal-oxide-semiconductor) gate (an insulated gate including a metal-oxide-semiconductor) structure 120 of a trench gate type is provided on a front surface of an n ⁇ -type semiconductor substrate constituting an n ⁇ -type drift layer 101 .
  • a collector electrode 133 is provided on a rear surface of the semiconductor substrate.
  • the MOS gate structure 120 includes plural trench structures 104 , n-type regions 102 , p-type base regions 103 , n + -type emitter regions 108 , an interlayer insulating film 109 including contact holes 112 , and an emitter electrode 111 , and the contact holes 112 are filled with contact plugs 110 of tungsten (W) or the like.
  • Each of the trench structures 104 includes a trench 113 , an insulating film 105 provided in the trench 113 , and an electrode 114 provided on the insulating film 105 .
  • the trench structures 104 include gate trench structures 106 each including the electrode 114 based on a gate potential, and emitter trench structures 107 each including the electrode 114 based on an emitter potential.
  • the gate trench structures 106 and the emitter trench structures 107 are formed in the IGBT regions 121 .
  • the gate trench structures 106 and the emitter trench structures 107 are alternately arranged.
  • Each of the gate trench structures 106 has, for example, a structure in which the electrode 114 of polycrystalline silicon is embedded, via the insulating film 105 .
  • Each of the emitter trench structures 107 also has, for example, a structure in which the electrode 114 of polycrystalline silicon is embedded, via the insulating film 105 .
  • FIGS. 9 and 10 are schematic diagrams of an end portion of the emitter trench structure 107 in the RC-IGBT according to the comparative example.
  • FIG. 9 is a plan view depicting a chip end portion 100 B of a semiconductor device 100
  • FIG. 10 is a sectional view along a line A-A′ in FIG. 9 .
  • a gate electrode 411 connected with a gate runner 400 is provided on a front surface of the semiconductor device 100 .
  • An end portion 106 a of the gate trench structure 106 in the IGBT regions 121 is formed to extend to a connection portion 423 such as polysilicon, and the electrode of the end portion 106 a is conductively connected to the gate electrode 411 via a contact hole 112 a opened in the interlayer insulating film 109 on the connection portion 423 .
  • the gate trench structure 106 and the end portion 106 a are indicated by a broken line in FIG. 10 .
  • An end portion 107 a of the emitter trench structure 107 in the FWD regions 122 does not extend to the end portion 106 a of the gate trench structure 106 and is formed to reach a connection portion 123 such as polysilicon to the emitter electrode 111 , which is located midway to the end portion 106 a.
  • the electrode 114 of the end portion 107 a is conductively connected to the emitter electrode 111 via a contact hole 112 b opened in the interlayer insulating film 109 on the connection portion 123 .
  • the emitter electrode 111 , the interlayer insulating film 109 , the contact plugs 110 (the contact holes 112 ), the trench structures 104 , the p-type base regions 103 , the n-type regions 102 , the n ⁇ -type drift layer 101 , n-type field-stop layers 130 , and the collector electrode 133 are provided in the IGBT regions 121 and the FWD regions 122 overall.
  • the n + -type emitter regions 108 and the p + -type collector regions 131 are provided in the IGBT regions 121 overall.
  • p + -type regions 115 and the n + -type cathode regions 132 are provided in the FWD regions 122 overall.
  • each of the trench structures 104 is the emitter trench structure 107 fixed to the emitter potential.
  • the p + -type regions 115 and the emitter electrode 111 are provided on the p-type base regions 103 and also function as p-type anode regions and an anode electrode of an FWD.
  • the n-type field-stop layers 130 are provided on a rear surface side of the n ⁇ -type semiconductor substrate in the depth direction.
  • the p + -type collector region 131 is provided in each of the IGBT regions 121 and the n + -type cathode region 132 is provided in each of the FWD regions 122 .
  • the collector electrode 133 functions also as a cathode electrode and is in contact with the p + -type collector regions 131 and the n + -type cathode regions 132 .
  • the RC-IGBT described above has a collector-emitter gate capacitance (a drain-source capacitance Cds) between the emitter trench structures 107 in the IGBT regions 121 and the collector electrode 133 .
  • the drain-source capacitance Cds is also present between the emitter trench structures 107 in the FWD regions 122 and the collector electrode 133 (the cathode electrode).
  • all the trench structures 104 are the emitter trench structures 107 and the drain-source capacitance Cds is presumed to increase by an active area.
  • FIG. 11 is a sectional view for explaining a problem of the RC-IGBT according to the comparative example.
  • the emitter trench structures 107 are connected to the emitter electrode 111 and are always 0 (zero) volts.
  • a hole accumulation layer H is formed near the emitter trench structures 107 due to a voltage difference between a voltage in the device and the emitter potential (0 volts). Holes pass through the accumulation layer H and conductivity modulation is prevented from occurring easily.
  • the voltage at the time of turn-on has a tailing shape, which causes a problem in that the turn-on power loss Eon is increased.
  • all the trench structures 104 in the FWD regions 122 are the emitter trench structures 107 . Therefore, the RC-IGBT has a problem in that the turn-on power loss Eon increases more than in a semiconductor device having an IGBT and an FWD separately.
  • the drain-source capacitance Cds cannot be adjusted variably and the turn-on power loss Eon cannot be set to an arbitrary value.
  • FIGS. 1A and 1B are sectional views depicting a configuration example of an RC-IGBT according to a first embodiment.
  • a basic structure of an RC-IGBT in the semiconductor device 100 depicted in FIGS. 1A and 1B is a same as a basic structure of the RC-IGBT according to the comparative example (see FIGS. 8 to 11 ).
  • the MOS gate (an insulated gate including a metal-oxide-semiconductor) structure 120 of a trench gate type is provided on a front surface of an n ⁇ -type semiconductor substrate constituting the n ⁇ -type drift layer 101 in the IGBT regions 121 that are first element regions in which insulated gate bipolar transistors are provided.
  • the MOS gate structure 120 includes the trench structures 104 formed on a front surface side of the n ⁇ -type semiconductor substrate, the n-type regions 102 and the p-type base regions 103 provided between adjacent ones of the trench structures 104 , the n + -type emitter regions 108 provided on the p-type base regions 103 , the interlayer insulating film 109 provided on the n + -type emitter regions 108 and including the contact holes 112 , and the emitter electrode 111 connected with the n + -type emitter regions 108 via the contact holes 112 , and the contact plugs 110 of tungsten (W) or the like are embedded in the contact holes 112 .
  • W tungsten
  • Each of the trench structures 104 includes the trench 113 , the insulating film 105 provided in the trench 113 , and the electrode 114 provided on the insulating film 105 .
  • the trench structures 104 include the gate trench structures 106 each including the electrode 114 based on a gate potential, and the emitter trench structures 107 each including the electrode 114 based on an emitter potential.
  • the trench structures 104 are, for example, arranged in a striped shaped along a direction extending in a direction (the depth direction of FIGS. 1A and 1B ) orthogonal to the width direction (the lateral direction in FIGS. 1A and 1B ) in which the IGBT regions (the first element regions) 121 and the FWD regions 122 being second element regions in which diodes are provided are arranged, as viewed from a front surface side of the semiconductor device (semiconductor wafer) 100 .
  • the emitter electrode 111 is electrically connected to the n + -type emitter regions 108 in the IGBT regions 121 .
  • the n-type regions 102 have a function to serve as a barrier for minority carriers (holes) in the n ⁇ -type drift layer 101 and accumulate the minority carriers in the n ⁇ -type drift layer 101 at the time of turn-on of the IGBT.
  • the gate trench structures 106 and the emitter trench structures 107 are formed in the IGBT regions 121 .
  • the gate trench structures 106 and the emitter trench structures 107 are alternately arranged.
  • Each of the gate trench structures 106 has, for example, a structure in which the electrode 114 of polycrystalline silicon is embedded, via the insulating film 105 . Connection of the polycrystalline silicon electrode 114 to the gate electrode 411 (see FIG. 10 ) via the connection portion 423 (see FIG. 10 ) enables the potential to be fixed at a gate potential.
  • Each of the emitter trench structures 107 also has, for example, a structure in which the electrode 114 of polycrystalline silicon is embedded, via the insulating film 105 . Connection of the polycrystalline silicon electrode 114 to the emitter electrode 111 (see FIG. 10 ) via the connection portion 123 (see FIG. 10 ) enables the potential to be fixed at an emitter potential.
  • the emitter electrode 111 , the interlayer insulating film 109 , the contact plugs 110 (the contact holes 112 ), the trench structures 104 , the p-type base regions 103 , the n-type regions 102 , the n ⁇ -type drift layer 101 , the n-type field-stop layers 130 , and the collector electrode 133 are provided in the IGBT regions 121 and the FWD regions 122 overall.
  • These elements may be provided to have a predetermined distance therebetween in the width direction. However, it is not always necessary to provide all of these elements at a predetermined distance. There may be some areas in which these elements are not provided. Firstly, these elements do not need to be provided at predetermined distances.
  • these elements may be provided at a different predetermined distance at portions of the boundaries O.
  • the n + -type emitter regions 108 and the p + -type collector region 131 are provided in the IGBT regions 121 overall.
  • the p + -type regions 115 and the n + -type cathode region 132 are provided in the FWD regions 122 overall.
  • the n-type field-stop layers 130 are provided on the rear surface side of the n ⁇ -type semiconductor substrate in the depth direction.
  • the p + -type collector region 131 is provided in the IGBT regions 121 and the n + -type cathode region 132 is provided in the FWD regions 122 .
  • a configuration in which the n-type field-stop layers 130 are not provided may be used or any number of the n-type field stop layers 130 may be provided. Further, configuration may be such that the n-type field-stop layers 130 are provided only in the IGBT regions 121 .
  • the n-type field-stop layers 130 are formed by irradiating protons multiple times to cause the n-type field-stop layers 130 to equivalently function as one broad n-type field-stop layer.
  • n-type field-stop layers may be formed at a deep position in the substrate by irradiating a polished face on the rear surface of the wafer with n-type impurities such as phosphorus or arsenic and annealing the substrate at an appropriate temperature.
  • n-type field-stop layers of selenium or sulfur may be formed.
  • n-type field-stop layers 130 enables a depleted layer extending from pn junctions between the p-type base regions 103 and the n-type regions 102 to be stopped and suppressed from reaching the p + -type collector region 131 in the off state, so that the on-voltage may be reduced. Further, the thickness of the n ⁇ -type drift layer 101 may be reduced.
  • the collector electrode 133 also serves as a cathode electrode and is in contact with the p + -type collector region 131 and the n + -type cathode region 132 .
  • the FWD regions 122 include the emitter trench structures 107 each including the electrode 114 based on an emitter potential, and floating trench structures 116 each including the electrode 114 having a floating potential, as the trench structures 104 .
  • Each of the floating trench structures 116 has, for example, a structure in which the electrode 114 of polycrystalline silicon is embedded, via the insulating film 105 .
  • the emitter trench structures 107 and the floating trench structures 116 are so-called dummy trench structures and each of which has the electrode 114 electrically isolated from a gate potential.
  • the FWD regions 122 include the p + -type regions 115 and the emitter electrode 111 on the p-type base regions 103 , which function also as p-type anode regions and an anode electrode in the FWD regions 122 .
  • the contact plugs 110 of tungsten (W) or the like are embedded also in the contact holes 112 in the interlayer insulating film 109 of the FWD regions 122 .
  • Ai-Si as an electrode material for the emitter electrode 111 enables satisfactory ohmic contact with the p-type base regions 103 in the IGBT regions 121 . Further, the use of Ai-Si as an electrode material for the emitter electrode 111 also enables in the FWD regions 122 , satisfactory ohmic contact with the p + -type regions 115 (the p-type anode regions).
  • the emitter trench structures 107 and the floating trench structures 116 are alternately arranged.
  • all the trench structures 104 in the FWD regions 122 may be the floating trench structures 116 as in the configuration example of FIG. 1B .
  • a ratio of the number of the emitter trench structures 107 connected to the emitter electrode 111 to the number of the floating trench structures 116 not connected to the emitter electrode 111 may be arbitrary changed.
  • drain-source capacitance Cds varies due to the gate trench structures 106 and the emitter trench structures 107 in the IGBT regions 121 as well as due to formation of the floating trench structures 116 in the FWD regions 122 is described below. Replacing the emitter trench structures 107 in the FWD regions 122 with the floating trench structures 116 changes the value of the drain-source capacitance Cds.
  • ⁇ 0: when all the trench structures 104 in the IGBT regions 121 are the gate trench structures 106 .
  • ⁇ 1: when all the trench structures 104 in the IGBT regions 121 are the emitter trench structures 107 (the device does not operate as an IGBT).
  • ⁇ 0: when all the trench structures 104 in the FWD regions 122 are the emitter trench structures 107 (the device is a general RC-IGBT), and
  • ⁇ 1: when all the trench structures 104 in the FWD regions 122 are the floating trench structures 116 .
  • ⁇ 0: when all the regions are the FWD regions 122 .
  • ⁇ 1: when all the regions are the IGBT regions 121 .
  • a capacitance CdsT between the emitter trench structures 107 and the floating trench structures 116 , and the collector electrode 133 in the drain-source capacitance Cds may be represented by expression 1 in a simplified manner.
  • a combination of ⁇ , ⁇ , and ⁇ may be a case where CdsT satisfies expressions 2 and 3.
  • the turn-on power loss Eon may be reduced to a practical level. Because it is confirmed that CdsT having values within a range of the expression 3 causes no malfunction, reliability of the product may be ensured when CdsT is set to satisfy the expression 3.
  • ⁇ , ⁇ , and ⁇ are set to arbitrary values and the drain-source capacitance Cds having an arbitrary value may be obtained based on the corresponding ratio between the trench structures 104 (the ratio of the emitter trench structures 107 ) in the IGBT regions 121 and the floating trench structures 116 in the FWD regions 122 , and also based on the ratio between the IGBT regions 121 and the FWD regions 122 .
  • the trench structures may be alternately arranged, or a region including the plural gate trench structures 106 and a region including the plural emitter trench structures 107 may be formed.
  • FIG. 2 is a plan view of the RC-IGBT according to the first embodiment.
  • the IGBT regions 121 and the FWD regions 122 each has predetermined widths and are arranged alternately in the width direction.
  • the ratio ⁇ of the IGBT regions 121 may be adjusted by setting these predetermined widths.
  • FIG. 3 is a schematic diagram of an end portion 116 a of one of the floating trench structures 116 in the FWD regions 122 in the RC-IGBT of the first embodiment.
  • FIG. 3 is a sectional view of the end portion 116 a of the floating trench structure 116 in the FWD regions 122 along the line A-A′ in the plan view of FIG. 9 .
  • no contact hole 112 b (see FIG. 10 ) is opened in the interlayer insulating film 109 on the connection portion 123 located at the end portion 116 a as depicted in FIG. 3 . Accordingly, the electrodes 114 of the floating trench structures 116 may be brought into a floating state without being conducted with the emitter electrode 111 .
  • FIG. 4 is a schematic diagram of another end portion 116 a of the floating trench structure 116 in the FWD regions 122 in the RC-IGBT of the first embodiment.
  • a front surface of the end portion 116 a of the floating trench structure 116 may be configured to be covered by the interlayer insulating film 109 without forming the connection portion 123 on the end portion 116 a of the floating trench structure 116 . This enables the floating trench structures 116 to be brought into a floating state without being conducted with the emitter electrode 111 .
  • the ratio ⁇ of the floating trench structures 116 among the trench structures 104 in the FWD regions 122 may be easily adjusted based on whether to conductively connect the end portions 107 a and 116 a of the FWD regions 122 to the emitter electrode 111 .
  • FIGS. 5 and 6 are sectional views depicting other configuration examples of the RC-IGBT of the first embodiment.
  • the n-type regions 102 provided in FIGS. 1A and 1B to function as a channel-stop layer are not provided.
  • the n-type regions 102 are provided only in the IGBT regions 121 and are not provided in the FWD regions 122 .
  • the amount of minority carriers accumulating in the n ⁇ -type drift layer 101 may be changed by these configurations in which the n-type regions 102 on the surface side of the n ⁇ -type drift layer 101 are not provided in a part of an area or in the entire area. Accordingly, the turn-on power loss Eon may be changed.
  • some of the emitter trench structures 107 connected to the emitter electrode 111 are replaced with the floating trench structures 116 in the FWD regions 122 , so that no hole accumulation layer is formed in the floating trench structures 116 at the time of turn-on. Accordingly, the conductivity modulation becomes more likely to occur and the turn-on power loss Eon may be reduced.
  • the drain-source capacitance Cds at a low voltage is particularly larger than the drain-source capacitance Cds in an IGBT as a single unit.
  • the drain-source capacitance Cds of an arbitrary value may be obtained by forming the trench structures 104 corresponding to the parameters ⁇ , ⁇ , and ⁇ .
  • the drain-source capacitance Cds was changed with the collector-emitter voltage at 0.5 volt or lower and the capacitance at 3.5 to 14.5 nF.
  • the drain-source capacitance Cds may be reduced. Therefore, the hole accumulation layer is not formed near the floating trench structures 116 during operation of the IGBT, the conductivity modulation occurs more easily, and the turn-on power loss Eon may be reduced. Further, by increasing or decreasing the number of the floating trench structures 116 among the dummy trench structures, the drain-source capacitance Cds may be correspondingly changed to an arbitrary value.
  • the floating trench structures 116 may each has a configuration in which the inner part of the trench 113 is filled with an insulating material, as well as the configuration in which the electrode 114 of the end portion 116 a is insulated without connecting to the emitter electrode 111 .
  • FIG. 7 is a sectional view depicting a configuration example of an RC-IGBT according to a second embodiment.
  • the second embodiment is a modification of the configuration described in the first embodiment ( FIGS. 1A and 1B ).
  • the floating trench structures 116 are provided also in the IGBT regions 121 in the second embodiment. Accordingly, the drain-source capacitance Cds may be reduced further and the turn-on power loss Eon may be reduced further. However, more floating trench structures 116 may be provided in the FWD regions 122 than in the IGBT regions 121 .
  • the trench structure 104 adjacent to the boundary O between the IGBT region 121 and the FWD region 122 on the side of the IGBT region 121 may be the floating trench structure 116 as in the second embodiment, or other trench structures 104 in the IGBT regions 121 may be the floating trench structures 116 .
  • the turn-on power loss Eon of an RC-IGBT may be reduced.
  • the semiconductor device according to the present embodiment is, for example, useful for a power semiconductor element such as a power device, or a power semiconductor element to be used for industrial motor control or engine control.

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Abstract

A semiconductor device including a semiconductor substrate and a plurality of trench structures formed on the semiconductor substrate. The semiconductor substrate includes a first element region for forming an insulated gate bipolar transistor therein, and a second element region for forming a diode therein, the semiconductor substrate constituting a drift layer. The plurality of trench structures includes a plurality of gate trench structures provided on a front surface side of the first element region, each gate trench structure having an electrode provided therein that is based on a gate potential, and a plurality of floating trench structures provided on a front surface side of the second element region, each floating trench structure having an electrode provided therein that has a floating potential.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2017-050653, filed on Mar. 15, 2017, the entire contents of which are incorporated herein by reference.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • Embodiments of the invention related to a semiconductor device used in power converting equipment.
  • 2. Description of the Related Art
  • Improvement of the characteristics of 600V, 1200V, and 1700V power semiconductor devices such as insulated gate bipolar transistors (IGBTs) or free wheeling diodes (FWDs) is advancing. Such power semiconductor devices are used in power converting equipment such as highly-efficient and power-saving inverters and are important for motor control.
  • In order to reduce the size of power converting equipment (relevant chips including an IGBT) overall, the development of a reverse conducting-IGBT (RC-IGBT) having a structure in which an IGBT and an FWD connected in anti-parallel with the IGBT are incorporated integrally on a single semiconductor chip has also advanced (for example, see International Publication No. WO 2016/080269).
  • A conventional technique discloses a structure of an RC-IGBT including plural first gate trenches arranged in a width direction of an IGBT region and plural second gate trenches extending in a direction intersecting with the first gate trenches, in which the first gate trenches and the second gate trenches are not in contact with each other (for example, see Japanese Laid-Open Patent Publication No. 2015-138789). A conventional configuration in which an on-potential is applied only to electrodes of either the first gate trenches or the second gate trenches and the other electrodes are caused to float has been disclosed.
    • SUMMARY OF THE INVENTION
  • According to an embodiment of the present invention, a semiconductor device includes a first element region in which an insulated gate bipolar transistor is provided; a second element region in which a diode is provided, the first element region and the second element region being located on a semiconductor substrate constituting a drift layer of a first conductivity type; gate trench structures provided on a front surface side of the first element region; and floating trench structures provided on a front surface side of the second element region. The gate trench structures each has an electrode based on a gate potential, the electrode being provided in the gate trench structures. The floating trench structures each has an electrode having a floating potential, the electrode being provided in the floating trench structures.
  • In the embodiment, each of a plurality of trench structures including the gate trench structures and the floating trench structures includes a trench and an insulating film provided in the trench, the electrode being provided on the insulating film.
  • In the embodiment, the trench structures further include emitter trench structures provided on the front surface side of the second element region. The emitter trench structures each has an electrode based on an emitter potential, the electrode being provided in the emitter trench structures.
  • In the embodiment, the semiconductor device further includes an interlayer insulating film provided on the trench structures in the first element region and the second element region, and an emitter electrode provided on the interlayer insulating film. The interlayer insulating film includes contact holes. The emitter trench structures have end portions connected with the emitter electrode by the contact holes. The floating trench structures are insulated from the emitter electrode by the interlayer insulating film.
  • In the embodiment, the semiconductor device further includes a collector electrode on a rear surface of the semiconductor substrate. A gate capacitance CdsT between the emitter trench structures and the floating trench structures, and the collector electrode satisfies CdsT/CdsT0≤¾ where a gate capacitance in a case where only the first element region is provided in the semiconductor device and the trench structures in the first element region are all the emitter trench structures is CdsT0.
  • In the embodiment, the emitter trench structures or the floating trench structures are provided also in the first element region.
  • In the embodiment, the first element region includes a base region of a second conductivity type provided between the trench structures that are adjacent in the first element region, and an emitter region of the first conductivity type provided on the base region.
  • In the embodiment, the floating trench structures are larger in number in the second element region than in the first element region.
  • In the embodiment, the semiconductor device further includes a channel-stop layer of the first conductivity type, an impurity concentration of the channel-stop layer being higher than an impurity concentration of the drift layer only in the first element region, or in the first element region and the second element region on a front surface side of the drift layer.
  • Objects, features, and advantages of the present invention are specifically set forth in or will become apparent from the following detailed description of the invention when read in conjunction with the accompanying drawings.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIGS. 1A and 1B are sectional views depicting a configuration example of an RC-IGBT according to a first embodiment;
  • FIG. 2 is a plan view of the RC-IGBT according to the first embodiment;
  • FIG. 3 is a sectional view of an end portion of a floating trench structure in the RC-IGBT of the first embodiment;
  • FIG. 4 is a sectional view of another end portion of the floating trench structure in the RC-IGBT of the first embodiment;
  • FIGS. 5 and 6 are sectional views depicting other configuration examples of the RC-IGBT of the first embodiment;
  • FIG. 7 is a sectional view depicting a configuration example of an RC-IGBT according to a second embodiment;
  • FIG. 8 is a sectional view of a configuration of a RC-IGBT according to a comparative example;
  • FIGS. 9 and 10 are schematic diagrams of an end portion of an emitter trench structure in the RC-IGBT according to the comparative example; and
  • FIG. 11 is a sectional view for explaining a problem of the RC-IGBT according to the comparative example.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • The conventional RC-IGBT has a problem in that the voltage at the time of turn-on has a tailing shape and turn-on power loss Eon becomes larger than that of a semiconductor device including an IGBT and an FWD separately.
  • Embodiments according to the present invention will be described in detail with reference to the accompanying drawings. In the present description and accompanying drawings, layers and regions prefixed with n or p mean that majority carriers are electrons or holes. Additionally, +or − appended to n or p means that the impurity concentration is higher or lower, respectively, than layers and regions without +or −. In the description of the embodiments below and the accompanying drawings, main portions that are identical will be given the same reference numerals and will not be repeatedly described. Further, in the present description, when Miller indices are described, “−” means a bar added to an index immediately after the “−”, and a negative index is expressed by prefixing “−” to the index.
  • The following embodiments are described assuming that an n-type is a first conductivity type and a p-type is a second conductivity type.
  • A configuration of an RC-IGBT according to a comparative example is described using, as an example, a configuration of an active region in which an IGBT and an FWD are incorporated and integrated on a single semiconductor chip.
  • FIG. 8 is a sectional view of a configuration of the RC-IGBT according to the comparative example. In the RC-IGBT of the comparative example, as depicted in FIG. 8, IGBT regions 121 and FWD regions 122 are provided adjacently with boundaries O interposed therebetween. The boundaries O are, for example, boundaries between p+-type collector regions 131 and n+-type cathode regions 132. In each of the IGBT regions 121, a MOS (metal-oxide-semiconductor) gate (an insulated gate including a metal-oxide-semiconductor) structure 120 of a trench gate type is provided on a front surface of an n−-type semiconductor substrate constituting an n−-type drift layer 101. A collector electrode 133 is provided on a rear surface of the semiconductor substrate.
  • The MOS gate structure 120 includes plural trench structures 104, n-type regions 102, p-type base regions 103, n+-type emitter regions 108, an interlayer insulating film 109 including contact holes 112, and an emitter electrode 111, and the contact holes 112 are filled with contact plugs 110 of tungsten (W) or the like. Each of the trench structures 104 includes a trench 113, an insulating film 105 provided in the trench 113, and an electrode 114 provided on the insulating film 105. The trench structures 104 include gate trench structures 106 each including the electrode 114 based on a gate potential, and emitter trench structures 107 each including the electrode 114 based on an emitter potential.
  • The gate trench structures 106 and the emitter trench structures 107 are formed in the IGBT regions 121. For example, the gate trench structures 106 and the emitter trench structures 107 are alternately arranged. Each of the gate trench structures 106 has, for example, a structure in which the electrode 114 of polycrystalline silicon is embedded, via the insulating film 105. Each of the emitter trench structures 107 also has, for example, a structure in which the electrode 114 of polycrystalline silicon is embedded, via the insulating film 105.
  • FIGS. 9 and 10 are schematic diagrams of an end portion of the emitter trench structure 107 in the RC-IGBT according to the comparative example. FIG. 9 is a plan view depicting a chip end portion 100B of a semiconductor device 100, and FIG. 10 is a sectional view along a line A-A′ in FIG. 9.
  • In the chip end portion 100B, a gate electrode 411 connected with a gate runner 400 is provided on a front surface of the semiconductor device 100. An end portion 106 a of the gate trench structure 106 in the IGBT regions 121 is formed to extend to a connection portion 423 such as polysilicon, and the electrode of the end portion 106 a is conductively connected to the gate electrode 411 via a contact hole 112 a opened in the interlayer insulating film 109 on the connection portion 423. The gate trench structure 106 and the end portion 106 a are indicated by a broken line in FIG. 10.
  • An end portion 107 a of the emitter trench structure 107 in the FWD regions 122 does not extend to the end portion 106 a of the gate trench structure 106 and is formed to reach a connection portion 123 such as polysilicon to the emitter electrode 111, which is located midway to the end portion 106 a. The electrode 114 of the end portion 107 a is conductively connected to the emitter electrode 111 via a contact hole 112 b opened in the interlayer insulating film 109 on the connection portion 123.
  • Referring back to FIG. 8, the emitter electrode 111, the interlayer insulating film 109, the contact plugs 110 (the contact holes 112), the trench structures 104, the p-type base regions 103, the n-type regions 102, the n−-type drift layer 101, n-type field-stop layers 130, and the collector electrode 133 are provided in the IGBT regions 121 and the FWD regions 122 overall. The n+-type emitter regions 108 and the p+-type collector regions 131 are provided in the IGBT regions 121 overall. p+-type regions 115 and the n+-type cathode regions 132 are provided in the FWD regions 122 overall.
  • In the FWD regions 122, each of the trench structures 104 is the emitter trench structure 107 fixed to the emitter potential. The p+-type regions 115 and the emitter electrode 111 are provided on the p-type base regions 103 and also function as p-type anode regions and an anode electrode of an FWD.
  • In the configuration example depicted in FIG. 8, the n-type field-stop layers 130 are provided on a rear surface side of the n−-type semiconductor substrate in the depth direction. On a rear surface side of the n-type field-stop layers 130, the p+-type collector region 131 is provided in each of the IGBT regions 121 and the n+-type cathode region 132 is provided in each of the FWD regions 122. The collector electrode 133 functions also as a cathode electrode and is in contact with the p+-type collector regions 131 and the n+-type cathode regions 132.
  • The RC-IGBT described above has a collector-emitter gate capacitance (a drain-source capacitance Cds) between the emitter trench structures 107 in the IGBT regions 121 and the collector electrode 133. The drain-source capacitance Cds is also present between the emitter trench structures 107 in the FWD regions 122 and the collector electrode 133 (the cathode electrode). In the FWD regions 122, all the trench structures 104 are the emitter trench structures 107 and the drain-source capacitance Cds is presumed to increase by an active area.
  • FIG. 11 is a sectional view for explaining a problem of the RC-IGBT according to the comparative example. In the RC-IGBT according to the comparative example, the emitter trench structures 107 are connected to the emitter electrode 111 and are always 0 (zero) volts. At the time of turn-on, a hole accumulation layer H is formed near the emitter trench structures 107 due to a voltage difference between a voltage in the device and the emitter potential (0 volts). Holes pass through the accumulation layer H and conductivity modulation is prevented from occurring easily.
  • Accordingly, the voltage at the time of turn-on has a tailing shape, which causes a problem in that the turn-on power loss Eon is increased. In the RC-IGBT, all the trench structures 104 in the FWD regions 122 are the emitter trench structures 107. Therefore, the RC-IGBT has a problem in that the turn-on power loss Eon increases more than in a semiconductor device having an IGBT and an FWD separately.
  • Furthermore, in the comparative example, the drain-source capacitance Cds cannot be adjusted variably and the turn-on power loss Eon cannot be set to an arbitrary value.
  • FIGS. 1A and 1B are sectional views depicting a configuration example of an RC-IGBT according to a first embodiment. A basic structure of an RC-IGBT in the semiconductor device 100 depicted in FIGS. 1A and 1B is a same as a basic structure of the RC-IGBT according to the comparative example (see FIGS. 8 to 11).
  • In the RC-IGBT, the MOS gate (an insulated gate including a metal-oxide-semiconductor) structure 120 of a trench gate type is provided on a front surface of an n−-type semiconductor substrate constituting the n−-type drift layer 101 in the IGBT regions 121 that are first element regions in which insulated gate bipolar transistors are provided.
  • The MOS gate structure 120 includes the trench structures 104 formed on a front surface side of the n−-type semiconductor substrate, the n-type regions 102 and the p-type base regions 103 provided between adjacent ones of the trench structures 104, the n+-type emitter regions 108 provided on the p-type base regions 103, the interlayer insulating film 109 provided on the n+-type emitter regions 108 and including the contact holes 112, and the emitter electrode 111 connected with the n+-type emitter regions 108 via the contact holes 112, and the contact plugs 110 of tungsten (W) or the like are embedded in the contact holes 112. Each of the trench structures 104 includes the trench 113, the insulating film 105 provided in the trench 113, and the electrode 114 provided on the insulating film 105. The trench structures 104 include the gate trench structures 106 each including the electrode 114 based on a gate potential, and the emitter trench structures 107 each including the electrode 114 based on an emitter potential.
  • The trench structures 104 (the trenches 113) are, for example, arranged in a striped shaped along a direction extending in a direction (the depth direction of FIGS. 1A and 1B) orthogonal to the width direction (the lateral direction in FIGS. 1A and 1B) in which the IGBT regions (the first element regions) 121 and the FWD regions 122 being second element regions in which diodes are provided are arranged, as viewed from a front surface side of the semiconductor device (semiconductor wafer) 100. The emitter electrode 111 is electrically connected to the n+-type emitter regions 108 in the IGBT regions 121.
  • The n-type regions 102 (channel stop layer) have a function to serve as a barrier for minority carriers (holes) in the n−-type drift layer 101 and accumulate the minority carriers in the n−-type drift layer 101 at the time of turn-on of the IGBT. The gate trench structures 106 and the emitter trench structures 107 are formed in the IGBT regions 121. For example, the gate trench structures 106 and the emitter trench structures 107 are alternately arranged. Each of the gate trench structures 106 has, for example, a structure in which the electrode 114 of polycrystalline silicon is embedded, via the insulating film 105. Connection of the polycrystalline silicon electrode 114 to the gate electrode 411 (see FIG. 10) via the connection portion 423 (see FIG. 10) enables the potential to be fixed at a gate potential.
  • Each of the emitter trench structures 107 also has, for example, a structure in which the electrode 114 of polycrystalline silicon is embedded, via the insulating film 105. Connection of the polycrystalline silicon electrode 114 to the emitter electrode 111 (see FIG. 10) via the connection portion 123 (see FIG. 10) enables the potential to be fixed at an emitter potential.
  • The emitter electrode 111, the interlayer insulating film 109, the contact plugs 110 (the contact holes 112), the trench structures 104, the p-type base regions 103, the n-type regions 102, the n−-type drift layer 101, the n-type field-stop layers 130, and the collector electrode 133 are provided in the IGBT regions 121 and the FWD regions 122 overall. These elements may be provided to have a predetermined distance therebetween in the width direction. However, it is not always necessary to provide all of these elements at a predetermined distance. There may be some areas in which these elements are not provided. Firstly, these elements do not need to be provided at predetermined distances. Alternatively, these elements may be provided at a different predetermined distance at portions of the boundaries O. The n+-type emitter regions 108 and the p+-type collector region 131 are provided in the IGBT regions 121 overall. The p+-type regions 115 and the n+-type cathode region 132 are provided in the FWD regions 122 overall.
  • Also in the configuration example of FIGS. 1A and 1B, the n-type field-stop layers 130 are provided on the rear surface side of the n−-type semiconductor substrate in the depth direction. On a rear surface of the n-type field-stop layers 130, the p+-type collector region 131 is provided in the IGBT regions 121 and the n+-type cathode region 132 is provided in the FWD regions 122. However, a configuration in which the n-type field-stop layers 130 are not provided may be used or any number of the n-type field stop layers 130 may be provided. Further, configuration may be such that the n-type field-stop layers 130 are provided only in the IGBT regions 121. In this example, the n-type field-stop layers 130 are formed by irradiating protons multiple times to cause the n-type field-stop layers 130 to equivalently function as one broad n-type field-stop layer. However, n-type field-stop layers may be formed at a deep position in the substrate by irradiating a polished face on the rear surface of the wafer with n-type impurities such as phosphorus or arsenic and annealing the substrate at an appropriate temperature. Alternatively, n-type field-stop layers of selenium or sulfur may be formed.
  • Provision of the n-type field-stop layers 130 enables a depleted layer extending from pn junctions between the p-type base regions 103 and the n-type regions 102 to be stopped and suppressed from reaching the p+-type collector region 131 in the off state, so that the on-voltage may be reduced. Further, the thickness of the n−-type drift layer 101 may be reduced. The collector electrode 133 also serves as a cathode electrode and is in contact with the p+-type collector region 131 and the n+-type cathode region 132.
  • In the configuration example of FIG. 1A, the FWD regions 122 include the emitter trench structures 107 each including the electrode 114 based on an emitter potential, and floating trench structures 116 each including the electrode 114 having a floating potential, as the trench structures 104. Each of the floating trench structures 116 has, for example, a structure in which the electrode 114 of polycrystalline silicon is embedded, via the insulating film 105. The emitter trench structures 107 and the floating trench structures 116 are so-called dummy trench structures and each of which has the electrode 114 electrically isolated from a gate potential. The FWD regions 122 include the p+-type regions 115 and the emitter electrode 111 on the p-type base regions 103, which function also as p-type anode regions and an anode electrode in the FWD regions 122. The contact plugs 110 of tungsten (W) or the like are embedded also in the contact holes 112 in the interlayer insulating film 109 of the FWD regions 122.
  • Use of Ai-Si as an electrode material for the emitter electrode 111 enables satisfactory ohmic contact with the p-type base regions 103 in the IGBT regions 121. Further, the use of Ai-Si as an electrode material for the emitter electrode 111 also enables in the FWD regions 122, satisfactory ohmic contact with the p+-type regions 115 (the p-type anode regions).
  • In the configuration example of FIG. 1A, among the trench structures 104 arranged in the FWD regions 122, the emitter trench structures 107 and the floating trench structures 116 are alternately arranged. Alternatively, all the trench structures 104 in the FWD regions 122 may be the floating trench structures 116 as in the configuration example of FIG. 1B. In the number of all the trench structures 104 in the FWD regions 122, a ratio of the number of the emitter trench structures 107 connected to the emitter electrode 111 to the number of the floating trench structures 116 not connected to the emitter electrode 111 may be arbitrary changed.
  • A point that the drain-source capacitance Cds varies due to the gate trench structures 106 and the emitter trench structures 107 in the IGBT regions 121 as well as due to formation of the floating trench structures 116 in the FWD regions 122 is described below. Replacing the emitter trench structures 107 in the FWD regions 122 with the floating trench structures 116 changes the value of the drain-source capacitance Cds.
  • Assuming that the ratio of the emitter trench structures 107 in the IGBT regions 121 is α,
  • α=0: when all the trench structures 104 in the IGBT regions 121 are the gate trench structures 106, and
  • α=1: when all the trench structures 104 in the IGBT regions 121 are the emitter trench structures 107 (the device does not operate as an IGBT).
  • Assuming that the ratio of the floating trench structures 116 among the trench structures 104 in the FWD regions 122 is β,
  • β=0: when all the trench structures 104 in the FWD regions 122 are the emitter trench structures 107 (the device is a general RC-IGBT), and
  • β=1: when all the trench structures 104 in the FWD regions 122 are the floating trench structures 116.
  • Assuming that the ratio of the IGBT regions 121 among the IGBT regions 121 and the FWD regions 122 is γ,
  • γ=0: when all the regions are the FWD regions 122, and
  • γ=1: when all the regions are the IGBT regions 121.
  • In the above condition, a capacitance CdsT between the emitter trench structures 107 and the floating trench structures 116, and the collector electrode 133 in the drain-source capacitance Cds may be represented by expression 1 in a simplified manner. In this expression, CdsT0 denotes a capacitance between the emitter trench structures 107 and the collector electrode 133 when γ=1 and α=1, that is, when all the trench structures 104 in all the IGBT regions 121 are the emitter trench structures 107.

  • CdsT=CdsT0×[γ×β+(1−γ)×(1−β)]  (1)
  • A combination of α, β, and γ may be a case where CdsT satisfies expressions 2 and 3. When CdsT is reduced to satisfy the expression 2, the turn-on power loss Eon may be reduced to a practical level. Because it is confirmed that CdsT having values within a range of the expression 3 causes no malfunction, reliability of the product may be ensured when CdsT is set to satisfy the expression 3.

  • CdsT/CdsT0≤¾  (2)

  • CdsT/CdsT0≥⅜  (3)
  • Based on the above descriptions, α, β, and γ are set to arbitrary values and the drain-source capacitance Cds having an arbitrary value may be obtained based on the corresponding ratio between the trench structures 104 (the ratio of the emitter trench structures 107) in the IGBT regions 121 and the floating trench structures 116 in the FWD regions 122, and also based on the ratio between the IGBT regions 121 and the FWD regions 122.
  • For example, when α=0.5, the ratio between the gate trench structures 106 and the emitter trench structures 107 in the IGBT regions 121 is 1:1. Therefore, the trench structures may be alternately arranged, or a region including the plural gate trench structures 106 and a region including the plural emitter trench structures 107 may be formed. When β=0.5, it suffices that the ratio in the number between the emitter trench structures 107 and the floating trench structures 116 in the FWD regions 122 is set to 1:1 to arrange these structures as in the example of the IGBT regions 121.
  • FIG. 2 is a plan view of the RC-IGBT according to the first embodiment. As depicted in FIG. 2, in the semiconductor device 100 of the RC-IGBT, the IGBT regions 121 and the FWD regions 122 each has predetermined widths and are arranged alternately in the width direction. The ratio γ of the IGBT regions 121 may be adjusted by setting these predetermined widths.
  • FIG. 3 is a schematic diagram of an end portion 116 a of one of the floating trench structures 116 in the FWD regions 122 in the RC-IGBT of the first embodiment. FIG. 3 is a sectional view of the end portion 116 a of the floating trench structure 116 in the FWD regions 122 along the line A-A′ in the plan view of FIG. 9.
  • In the first embodiment, in the floating trench structures 116 in the FWD regions 122, no contact hole 112 b (see FIG. 10) is opened in the interlayer insulating film 109 on the connection portion 123 located at the end portion 116 a as depicted in FIG. 3. Accordingly, the electrodes 114 of the floating trench structures 116 may be brought into a floating state without being conducted with the emitter electrode 111.
  • FIG. 4 is a schematic diagram of another end portion 116 a of the floating trench structure 116 in the FWD regions 122 in the RC-IGBT of the first embodiment. As indicated by the configuration example of FIG. 4, a front surface of the end portion 116 a of the floating trench structure 116 may be configured to be covered by the interlayer insulating film 109 without forming the connection portion 123 on the end portion 116 a of the floating trench structure 116. This enables the floating trench structures 116 to be brought into a floating state without being conducted with the emitter electrode 111.
  • According to the above configuration examples, the ratio β of the floating trench structures 116 among the trench structures 104 in the FWD regions 122 may be easily adjusted based on whether to conductively connect the end portions 107 a and 116 a of the FWD regions 122 to the emitter electrode 111.
  • FIGS. 5 and 6 are sectional views depicting other configuration examples of the RC-IGBT of the first embodiment. In the configuration example of FIG. 5, the n-type regions 102 provided in FIGS. 1A and 1B to function as a channel-stop layer are not provided. In FIG. 6, the n-type regions 102 are provided only in the IGBT regions 121 and are not provided in the FWD regions 122.
  • The amount of minority carriers accumulating in the n−-type drift layer 101 may be changed by these configurations in which the n-type regions 102 on the surface side of the n−-type drift layer 101 are not provided in a part of an area or in the entire area. Accordingly, the turn-on power loss Eon may be changed.
  • According to the above configurations, some of the emitter trench structures 107 connected to the emitter electrode 111 are replaced with the floating trench structures 116 in the FWD regions 122, so that no hole accumulation layer is formed in the floating trench structures 116 at the time of turn-on. Accordingly, the conductivity modulation becomes more likely to occur and the turn-on power loss Eon may be reduced.
  • Furthermore, in the RC-IGBT, the drain-source capacitance Cds at a low voltage (a collector-emitter voltage) is particularly larger than the drain-source capacitance Cds in an IGBT as a single unit. With the above configuration, the drain-source capacitance Cds of an arbitrary value may be obtained by forming the trench structures 104 corresponding to the parameters α, β, and γ. For example, in an experimental example, the drain-source capacitance Cds was changed with the collector-emitter voltage at 0.5 volt or lower and the capacitance at 3.5 to 14.5 nF.
  • According to the first embodiment described above, a configuration in which at least some of the dummy trench structures connected to the emitter electrode 111 in the FWD regions 122 of the RC-IGBT are replaced by the floating trench structures 116 is obtained, whereby the drain-source capacitance Cds may be reduced. Therefore, the hole accumulation layer is not formed near the floating trench structures 116 during operation of the IGBT, the conductivity modulation occurs more easily, and the turn-on power loss Eon may be reduced. Further, by increasing or decreasing the number of the floating trench structures 116 among the dummy trench structures, the drain-source capacitance Cds may be correspondingly changed to an arbitrary value.
  • The floating trench structures 116 may each has a configuration in which the inner part of the trench 113 is filled with an insulating material, as well as the configuration in which the electrode 114 of the end portion 116 a is insulated without connecting to the emitter electrode 111.
  • FIG. 7 is a sectional view depicting a configuration example of an RC-IGBT according to a second embodiment. The second embodiment is a modification of the configuration described in the first embodiment (FIGS. 1A and 1B). As depicted in FIG. 7, the floating trench structures 116 are provided also in the IGBT regions 121 in the second embodiment. Accordingly, the drain-source capacitance Cds may be reduced further and the turn-on power loss Eon may be reduced further. However, more floating trench structures 116 may be provided in the FWD regions 122 than in the IGBT regions 121. The trench structure 104 adjacent to the boundary O between the IGBT region 121 and the FWD region 122 on the side of the IGBT region 121 may be the floating trench structure 116 as in the second embodiment, or other trench structures 104 in the IGBT regions 121 may be the floating trench structures 116.
  • The present invention is not limited to the embodiments described above, and may be variously changed without departing from the spirit of the present invention.
  • According to the present invention, the turn-on power loss Eon of an RC-IGBT may be reduced.
  • As described above, the semiconductor device according to the present embodiment is, for example, useful for a power semiconductor element such as a power device, or a power semiconductor element to be used for industrial motor control or engine control.
  • Although the invention has been described with respect to a specific embodiment for a complete and clear disclosure, the appended claims are not to be thus limited but are to be construed as embodying all modifications and alternative constructions that may occur to one skilled in the art which fairly fall within the basic teaching herein set forth.

Claims (9)

What is claimed is:
1. A semiconductor device comprising:
a semiconductor substrate including
a first element region for forming an insulated gate bipolar transistor therein, and
a second element region for forming a diode therein, the semiconductor substrate constituting a drift layer; and
a plurality of trench structures formed on the semiconductor substrate, including
a plurality of gate trench structures provided on a front surface side of the first element region, each gate trench structure having an electrode provided therein that is based on a gate potential, and
a plurality of floating trench structures provided on a front surface side of the second element region, each floating trench structure having an electrode provided therein that has a floating potential.
2. The semiconductor device according to claim 1, wherein each of the trench structures includes
a trench,
an insulating film provided in the trench, and
the electrode provided on the insulating film.
3. The semiconductor device according to claim 1, wherein the plurality of trench structures further include
a plurality of emitter trench structures provided on the front surface side of the second element region, each emitter trench structure having an electrode provided therein that is based on an emitter potential.
4. The semiconductor device according to claim 3, further comprising:
an interlayer insulating film provided on the plurality of trench structures in the first and second element regions, and
an emitter electrode provided on the interlayer insulating film, wherein
the interlayer insulating film includes a plurality of contact holes,
end portions of the emitter trench structures are connected with the emitter electrode via the contact holes, and
the floating trench structures are insulated from the emitter electrode by the interlayer insulating film.
5. The semiconductor device according to claim 3, further comprising:
a collector electrode on a rear surface of the semiconductor substrate, wherein
a gate capacitance CdsT between the emitter trench structures and the floating trench structures, and the collector electrode satisfies CdsT/CdsT0≤¾, where CdsT0 is the gate capacitance in a case where only the first element region is provided in the semiconductor device and only the emitter trench structures are formed in the first element region.
6. The semiconductor device according to claim 3, wherein
the emitter trench structures or the floating trench structures are provided also in the first element region.
7. The semiconductor device according to claim 1, wherein
the semiconductor substrate is of a first conductivity type; and
the semiconductor device further includes, in the first element region,
a base region of a second conductivity type provided between adjacent ones of the trench structures in the first element region, and
an emitter region of the first conductivity type provided on the base region.
8. The semiconductor device according to claim 1, wherein
the floating trench structures are larger in number in the second element region than in the first element region.
9. The semiconductor device according to claim 1, further comprising a channel-stop layer, an impurity concentration of which is higher than an impurity concentration of the drift layer, in only the first element region, or in both the first element region and the second element region on a front surface side of the drift layer.
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180261594A1 (en) * 2017-03-10 2018-09-13 Fuji Electric Co., Ltd. Semiconductor device
US20190081162A1 (en) * 2017-09-14 2019-03-14 Kabushiki Kaisha Toshiba Semiconductor device
CN109728085A (en) * 2018-12-29 2019-05-07 中山汉臣电子科技有限公司 A kind of inverse conductivity type insulated gate bipolar transistor
US10366985B2 (en) * 2016-08-03 2019-07-30 Renesas Electronics Corporation Semiconductor device having a sense IGBT for current detection of a main IGBT
US10763252B2 (en) * 2017-03-15 2020-09-01 Fuji Electric Co., Ltd. Semiconductor device
DE102020134850A1 (en) 2020-12-23 2022-06-23 Infineon Technologies Austria Ag RC-IGBT Method of manufacturing an RC-IGBT
US20220320323A1 (en) * 2020-06-18 2022-10-06 Dynex Semiconductor Limited Reverse conducting igbt with controlled anode injection
US20230083162A1 (en) * 2021-09-14 2023-03-16 Mitsubishi Electric Corporation Semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
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JP7279356B2 (en) 2018-12-19 2023-05-23 富士電機株式会社 semiconductor equipment
DE102019133030B4 (en) * 2019-12-04 2023-05-04 Infineon Technologies Austria Ag INSULATED GATE BIPOLAR TRANSISTOR INCLUDING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
JPWO2023157422A1 (en) * 2022-02-18 2023-08-24

Citations (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936890B2 (en) * 2001-09-13 2005-08-30 Koninklijke Philips Electronics N.V. Edge termination in MOS transistors
US8120104B2 (en) * 2010-02-01 2012-02-21 Renesas Electronics Corporation Semiconductor device and method of manufacturing semiconductor device
US20120132954A1 (en) * 2010-11-25 2012-05-31 Denso Corporation Semiconductor device
US8304829B2 (en) * 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8866222B2 (en) * 2012-03-07 2014-10-21 Infineon Technologies Austria Ag Charge compensation semiconductor device
US9123769B2 (en) * 2012-09-13 2015-09-01 Magnachip Semiconductor, Ltd. Power semiconductor device and fabrication method thereof
US20150262999A1 (en) * 2014-03-14 2015-09-17 Kabushiki Kaisha Toshiba Semiconductor device
US20150349103A1 (en) * 2013-08-15 2015-12-03 Fuji Electric Co., Ltd. Semiconductor device
US20160172471A1 (en) * 2014-12-12 2016-06-16 Toyota Jidosha Kabushiki Kaisha Reverse conducting insulated gate bipolar transistor
US20160268181A1 (en) * 2015-03-10 2016-09-15 Kabushiki Kaisha Toshiba Semiconductor device
US20170077216A1 (en) * 2014-03-25 2017-03-16 Denso Corporation Semiconductor device
US20170162662A1 (en) * 2015-12-03 2017-06-08 Fuji Electric Co., Ltd. Semiconductor device
US9691844B2 (en) * 2015-05-12 2017-06-27 Magnachip Semiconductor, Ltd. Power semiconductor device
US20170200784A1 (en) * 2016-01-12 2017-07-13 Fuji Electric Co., Ltd. Semiconductor device
US20170250269A1 (en) * 2014-07-14 2017-08-31 Denso Corporation Semiconductor device and manufacturing method of the same
US20170263603A1 (en) * 2014-09-29 2017-09-14 Toyota Jidosha Kabushiki Kaisha Semiconductor device
US20180190649A1 (en) * 2016-12-29 2018-07-05 Infineon Technologies Ag Semiconductor Device with an IGBT Region and a Non-Switchable Diode Region
US20180190805A1 (en) * 2015-11-10 2018-07-05 ZhuZhou CRRC Times Electric Co., Ltd. Insulated gate bipolar transistor and preparation method therefor
US10026728B1 (en) * 2017-04-26 2018-07-17 Semiconductor Components Industries, Llc Semiconductor device having biasing structure for self-isolating buried layer and method therefor
US20180226487A1 (en) * 2017-02-09 2018-08-09 Kabushiki Kaisha Toshiba Semiconductor device and electrical apparatus
US20180226399A1 (en) * 2017-02-09 2018-08-09 Kabushiki Kaisha Toshiba Semiconductor device
US20180277667A1 (en) * 2017-03-23 2018-09-27 Kabushiki Kaisha Toshiba Semiconductor device
US20180308839A1 (en) * 2017-04-21 2018-10-25 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
US20190027591A1 (en) * 2017-07-18 2019-01-24 Fuji Electric Co., Ltd. Semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152574A (en) 1991-11-29 1993-06-18 Fuji Electric Co Ltd Semiconductor device
JP4167313B2 (en) 1997-03-18 2008-10-15 株式会社東芝 High voltage power semiconductor device
JP4351745B2 (en) * 1997-09-19 2009-10-28 株式会社東芝 Semiconductor device
JP5098303B2 (en) * 2006-03-02 2012-12-12 株式会社デンソー Insulated gate bipolar transistor
JP5672766B2 (en) * 2010-05-17 2015-02-18 株式会社デンソー Semiconductor device
US8716746B2 (en) 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
JP5636808B2 (en) 2010-08-17 2014-12-10 株式会社デンソー Semiconductor device
JP5891023B2 (en) * 2011-12-07 2016-03-22 株式会社 日立パワーデバイス Semiconductor device and power conversion device using the same
JP5924420B2 (en) 2012-12-20 2016-05-25 トヨタ自動車株式会社 Semiconductor device
JP2015138789A (en) 2014-01-20 2015-07-30 トヨタ自動車株式会社 semiconductor device
WO2015190579A1 (en) 2014-06-12 2015-12-17 富士電機株式会社 Semiconductor device
JP6222702B2 (en) * 2014-09-11 2017-11-01 株式会社東芝 Semiconductor device
JP6260515B2 (en) * 2014-11-13 2018-01-17 三菱電機株式会社 Semiconductor device
WO2016080269A1 (en) 2014-11-17 2016-05-26 富士電機株式会社 Semiconductor device and method for producing semiconductor device
JP2016174029A (en) 2015-03-16 2016-09-29 株式会社東芝 Semiconductor device
JP6891560B2 (en) * 2017-03-15 2021-06-18 富士電機株式会社 Semiconductor device

Patent Citations (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936890B2 (en) * 2001-09-13 2005-08-30 Koninklijke Philips Electronics N.V. Edge termination in MOS transistors
US8304829B2 (en) * 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8120104B2 (en) * 2010-02-01 2012-02-21 Renesas Electronics Corporation Semiconductor device and method of manufacturing semiconductor device
US20120132954A1 (en) * 2010-11-25 2012-05-31 Denso Corporation Semiconductor device
US8866222B2 (en) * 2012-03-07 2014-10-21 Infineon Technologies Austria Ag Charge compensation semiconductor device
US9123769B2 (en) * 2012-09-13 2015-09-01 Magnachip Semiconductor, Ltd. Power semiconductor device and fabrication method thereof
US20150349103A1 (en) * 2013-08-15 2015-12-03 Fuji Electric Co., Ltd. Semiconductor device
US20150262999A1 (en) * 2014-03-14 2015-09-17 Kabushiki Kaisha Toshiba Semiconductor device
US20170077216A1 (en) * 2014-03-25 2017-03-16 Denso Corporation Semiconductor device
US20170250269A1 (en) * 2014-07-14 2017-08-31 Denso Corporation Semiconductor device and manufacturing method of the same
US20170263603A1 (en) * 2014-09-29 2017-09-14 Toyota Jidosha Kabushiki Kaisha Semiconductor device
US20160172471A1 (en) * 2014-12-12 2016-06-16 Toyota Jidosha Kabushiki Kaisha Reverse conducting insulated gate bipolar transistor
US20160268181A1 (en) * 2015-03-10 2016-09-15 Kabushiki Kaisha Toshiba Semiconductor device
US9691844B2 (en) * 2015-05-12 2017-06-27 Magnachip Semiconductor, Ltd. Power semiconductor device
US20180190805A1 (en) * 2015-11-10 2018-07-05 ZhuZhou CRRC Times Electric Co., Ltd. Insulated gate bipolar transistor and preparation method therefor
US20170162662A1 (en) * 2015-12-03 2017-06-08 Fuji Electric Co., Ltd. Semiconductor device
US20170200784A1 (en) * 2016-01-12 2017-07-13 Fuji Electric Co., Ltd. Semiconductor device
US20180190649A1 (en) * 2016-12-29 2018-07-05 Infineon Technologies Ag Semiconductor Device with an IGBT Region and a Non-Switchable Diode Region
US20180226487A1 (en) * 2017-02-09 2018-08-09 Kabushiki Kaisha Toshiba Semiconductor device and electrical apparatus
US20180226399A1 (en) * 2017-02-09 2018-08-09 Kabushiki Kaisha Toshiba Semiconductor device
US20180277667A1 (en) * 2017-03-23 2018-09-27 Kabushiki Kaisha Toshiba Semiconductor device
US20180308839A1 (en) * 2017-04-21 2018-10-25 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
US10026728B1 (en) * 2017-04-26 2018-07-17 Semiconductor Components Industries, Llc Semiconductor device having biasing structure for self-isolating buried layer and method therefor
US20190027591A1 (en) * 2017-07-18 2019-01-24 Fuji Electric Co., Ltd. Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10366985B2 (en) * 2016-08-03 2019-07-30 Renesas Electronics Corporation Semiconductor device having a sense IGBT for current detection of a main IGBT
US20180261594A1 (en) * 2017-03-10 2018-09-13 Fuji Electric Co., Ltd. Semiconductor device
US10763252B2 (en) * 2017-03-15 2020-09-01 Fuji Electric Co., Ltd. Semiconductor device
US20190081162A1 (en) * 2017-09-14 2019-03-14 Kabushiki Kaisha Toshiba Semiconductor device
US10418470B2 (en) * 2017-09-14 2019-09-17 Kabushiki Kaisha Toshiba Semiconductor device having IGBT portion and diode portion
CN109728085A (en) * 2018-12-29 2019-05-07 中山汉臣电子科技有限公司 A kind of inverse conductivity type insulated gate bipolar transistor
US20220320323A1 (en) * 2020-06-18 2022-10-06 Dynex Semiconductor Limited Reverse conducting igbt with controlled anode injection
DE102020134850A1 (en) 2020-12-23 2022-06-23 Infineon Technologies Austria Ag RC-IGBT Method of manufacturing an RC-IGBT
US20230083162A1 (en) * 2021-09-14 2023-03-16 Mitsubishi Electric Corporation Semiconductor device

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