JPWO2025018064A5 - - Google Patents

Info

Publication number
JPWO2025018064A5
JPWO2025018064A5 JP2025533908A JP2025533908A JPWO2025018064A5 JP WO2025018064 A5 JPWO2025018064 A5 JP WO2025018064A5 JP 2025533908 A JP2025533908 A JP 2025533908A JP 2025533908 A JP2025533908 A JP 2025533908A JP WO2025018064 A5 JPWO2025018064 A5 JP WO2025018064A5
Authority
JP
Japan
Prior art keywords
field relaxation
impurity region
trench
semiconductor device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025533908A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025018064A1 (https=
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/021287 external-priority patent/WO2025018064A1/ja
Publication of JPWO2025018064A1 publication Critical patent/JPWO2025018064A1/ja
Publication of JPWO2025018064A5 publication Critical patent/JPWO2025018064A5/ja
Pending legal-status Critical Current

Links

JP2025533908A 2023-07-20 2024-06-12 Pending JPWO2025018064A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023118661 2023-07-20
PCT/JP2024/021287 WO2025018064A1 (ja) 2023-07-20 2024-06-12 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2025018064A1 JPWO2025018064A1 (https=) 2025-01-23
JPWO2025018064A5 true JPWO2025018064A5 (https=) 2026-04-17

Family

ID=94281371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025533908A Pending JPWO2025018064A1 (https=) 2023-07-20 2024-06-12

Country Status (2)

Country Link
JP (1) JPWO2025018064A1 (https=)
WO (1) WO2025018064A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112018002873T5 (de) * 2017-06-06 2020-02-27 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandler
JP6896593B2 (ja) * 2017-11-22 2021-06-30 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP7210182B2 (ja) * 2018-07-26 2023-01-23 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機

Similar Documents

Publication Publication Date Title
CN102403356B (zh) 半导体装置
JP2021073733A5 (https=)
US7692241B2 (en) Semiconductor device
JP5297706B2 (ja) 半導体装置
JP2009088198A (ja) 半導体装置
JP5537359B2 (ja) 半導体装置
CN101211983A (zh) 半导体器件及其制造方法
JP2019054070A5 (https=)
JP2019165180A5 (https=)
JP2010232335A5 (https=)
JP5091614B2 (ja) 半導体素子
CN103681785A (zh) 半导体装置
JP2022009745A5 (https=)
KR100873419B1 (ko) 높은 항복 전압, 낮은 온 저항 및 작은 스위칭 손실을갖는 전력용 반도체 소자
JP2017098359A (ja) 逆導通ｉｇｂｔ
JP2023179936A5 (https=)
JPWO2022239284A5 (https=)
JPWO2022004807A5 (https=)
JP7147510B2 (ja) スイッチング素子
JPWO2025018064A5 (https=)
JPWO2025004543A5 (https=)
JP2018186233A5 (https=)
JP2021174835A5 (https=)
JPWO2024203661A5 (https=)
JP5465837B2 (ja) 半導体装置