JPWO2022004807A5 - - Google Patents

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Publication number
JPWO2022004807A5
JPWO2022004807A5 JP2022534090A JP2022534090A JPWO2022004807A5 JP WO2022004807 A5 JPWO2022004807 A5 JP WO2022004807A5 JP 2022534090 A JP2022534090 A JP 2022534090A JP 2022534090 A JP2022534090 A JP 2022534090A JP WO2022004807 A5 JPWO2022004807 A5 JP WO2022004807A5
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JP2022534090A
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Japanese (ja)
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JPWO2022004807A1 (https=
JP7364081B2 (ja
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Priority claimed from PCT/JP2021/024812 external-priority patent/WO2022004807A1/ja
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JP2022534090A 2020-07-03 2021-06-30 半導体装置 Active JP7364081B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020115972 2020-07-03
JP2020115972 2020-07-03
PCT/JP2021/024812 WO2022004807A1 (ja) 2020-07-03 2021-06-30 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022004807A1 JPWO2022004807A1 (https=) 2022-01-06
JPWO2022004807A5 true JPWO2022004807A5 (https=) 2022-11-16
JP7364081B2 JP7364081B2 (ja) 2023-10-18

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ID=79316372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022534090A Active JP7364081B2 (ja) 2020-07-03 2021-06-30 半導体装置

Country Status (4)

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US (1) US12464768B2 (https=)
JP (1) JP7364081B2 (https=)
CN (1) CN115735280A (https=)
WO (1) WO2022004807A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7701303B2 (ja) * 2022-04-11 2025-07-01 ルネサスエレクトロニクス株式会社 半導体装置
CN119092488B (zh) * 2024-11-06 2025-04-01 杭州士兰集昕微电子有限公司 半导体器件及其制造方法、半导体器件的设计方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2973588B2 (ja) * 1991-06-10 1999-11-08 富士電機株式会社 Mos型半導体装置
JP3504085B2 (ja) * 1996-09-30 2004-03-08 株式会社東芝 半導体装置
JPH10261704A (ja) 1997-03-18 1998-09-29 Toyota Motor Corp 半導体装置及びその製造方法
JP3450650B2 (ja) * 1997-06-24 2003-09-29 株式会社東芝 半導体装置
JP4218512B2 (ja) 2003-12-08 2009-02-04 株式会社豊田自動織機 半導体装置
JP4921730B2 (ja) * 2005-06-20 2012-04-25 株式会社東芝 半導体装置
JP5481030B2 (ja) * 2008-01-30 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置
JP2012204636A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
JP5915677B2 (ja) * 2014-03-04 2016-05-11 トヨタ自動車株式会社 半導体装置
JP2017139291A (ja) * 2016-02-02 2017-08-10 トヨタ自動車株式会社 半導体装置
JP2018016300A (ja) 2016-07-13 2018-02-01 株式会社デンソー 車輪位置検出装置
JP6696450B2 (ja) * 2017-01-27 2020-05-20 株式会社デンソー 炭化珪素半導体装置
TWI648840B (zh) * 2017-05-04 2019-01-21 Leadtrend Technology Corporation 具有良好單脈衝雪崩能量之高壓半導體元件與相關之製作方法

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