JP2024068760A5 - - Google Patents

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Publication number
JP2024068760A5
JP2024068760A5 JP2022179333A JP2022179333A JP2024068760A5 JP 2024068760 A5 JP2024068760 A5 JP 2024068760A5 JP 2022179333 A JP2022179333 A JP 2022179333A JP 2022179333 A JP2022179333 A JP 2022179333A JP 2024068760 A5 JP2024068760 A5 JP 2024068760A5
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JP
Japan
Prior art keywords
electrode
region
channel stopper
semiconductor device
insulating film
Prior art date
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Application number
JP2022179333A
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English (en)
Japanese (ja)
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JP2024068760A (ja
JP7834008B2 (ja
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Priority to JP2022179333A priority Critical patent/JP7834008B2/ja
Priority claimed from JP2022179333A external-priority patent/JP7834008B2/ja
Priority to US18/453,932 priority patent/US20240153989A1/en
Priority to DE102023125588.6A priority patent/DE102023125588A1/de
Priority to CN202311456805.2A priority patent/CN118016687A/zh
Publication of JP2024068760A publication Critical patent/JP2024068760A/ja
Publication of JP2024068760A5 publication Critical patent/JP2024068760A5/ja
Application granted granted Critical
Publication of JP7834008B2 publication Critical patent/JP7834008B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022179333A 2022-11-09 2022-11-09 半導体装置 Active JP7834008B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022179333A JP7834008B2 (ja) 2022-11-09 2022-11-09 半導体装置
US18/453,932 US20240153989A1 (en) 2022-11-09 2023-08-22 Semiconductor device
DE102023125588.6A DE102023125588A1 (de) 2022-11-09 2023-09-21 Halbleitervorrichtung
CN202311456805.2A CN118016687A (zh) 2022-11-09 2023-11-03 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022179333A JP7834008B2 (ja) 2022-11-09 2022-11-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2024068760A JP2024068760A (ja) 2024-05-21
JP2024068760A5 true JP2024068760A5 (https=) 2024-11-25
JP7834008B2 JP7834008B2 (ja) 2026-03-23

Family

ID=90928146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022179333A Active JP7834008B2 (ja) 2022-11-09 2022-11-09 半導体装置

Country Status (4)

Country Link
US (1) US20240153989A1 (https=)
JP (1) JP7834008B2 (https=)
CN (1) CN118016687A (https=)
DE (1) DE102023125588A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7485164B2 (ja) * 2021-12-03 2024-05-16 株式会社三洋物産 遊技機
JP7485162B2 (ja) * 2021-12-03 2024-05-16 株式会社三洋物産 遊技機
JP7485163B2 (ja) * 2021-12-03 2024-05-16 株式会社三洋物産 遊技機
JP2024098458A (ja) * 2023-01-10 2024-07-23 富士電機株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585331B2 (ja) * 1986-12-26 1997-02-26 株式会社東芝 高耐圧プレーナ素子
US8564088B2 (en) * 2008-08-19 2013-10-22 Infineon Technologies Austria Ag Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region
JP5391447B2 (ja) 2009-04-06 2014-01-15 三菱電機株式会社 半導体装置およびその製造方法
JP5515922B2 (ja) * 2010-03-24 2014-06-11 富士電機株式会社 半導体装置
JP5640969B2 (ja) * 2011-12-26 2014-12-17 三菱電機株式会社 半導体素子
JP5921784B2 (ja) 2014-01-10 2016-05-24 三菱電機株式会社 半導体装置
JP7061948B2 (ja) 2018-10-23 2022-05-02 三菱電機株式会社 半導体装置、および、半導体装置の製造方法

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