JPWO2024143378A5 - - Google Patents
Info
- Publication number
- JPWO2024143378A5 JPWO2024143378A5 JP2024567869A JP2024567869A JPWO2024143378A5 JP WO2024143378 A5 JPWO2024143378 A5 JP WO2024143378A5 JP 2024567869 A JP2024567869 A JP 2024567869A JP 2024567869 A JP2024567869 A JP 2024567869A JP WO2024143378 A5 JPWO2024143378 A5 JP WO2024143378A5
- Authority
- JP
- Japan
- Prior art keywords
- planar
- insulating film
- gate electrode
- semiconductor device
- drift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022212614 | 2022-12-28 | ||
| PCT/JP2023/046699 WO2024143378A1 (ja) | 2022-12-28 | 2023-12-26 | ＳｉＣ半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024143378A1 JPWO2024143378A1 (https=) | 2024-07-04 |
| JPWO2024143378A5 true JPWO2024143378A5 (https=) | 2025-09-11 |
Family
ID=91717764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024567869A Pending JPWO2024143378A1 (https=) | 2022-12-28 | 2023-12-26 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250331225A1 (https=) |
| JP (1) | JPWO2024143378A1 (https=) |
| CN (1) | CN120584561A (https=) |
| DE (1) | DE112023004900T5 (https=) |
| WO (1) | WO2024143378A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119384019A (zh) * | 2024-12-30 | 2025-01-28 | 深圳天狼芯半导体有限公司 | 半导体器件、制备方法及电子设备 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011228611A (ja) * | 2010-03-30 | 2011-11-10 | Renesas Electronics Corp | 半導体装置およびその製造方法、ならびに電源装置 |
| JP6977273B2 (ja) * | 2016-06-16 | 2021-12-08 | 富士電機株式会社 | 半導体装置および製造方法 |
| CN109065620B (zh) * | 2018-08-22 | 2023-10-13 | 江苏中科君芯科技有限公司 | 一种具有低米勒电容的igbt器件 |
| CN112786587B (zh) * | 2019-11-08 | 2022-09-09 | 株洲中车时代电气股份有限公司 | 一种碳化硅mosfet器件及其元胞结构 |
| JP2022046240A (ja) * | 2020-09-10 | 2022-03-23 | 株式会社東芝 | 半導体装置 |
-
2023
- 2023-12-26 CN CN202380089540.9A patent/CN120584561A/zh active Pending
- 2023-12-26 WO PCT/JP2023/046699 patent/WO2024143378A1/ja not_active Ceased
- 2023-12-26 DE DE112023004900.9T patent/DE112023004900T5/de active Pending
- 2023-12-26 JP JP2024567869A patent/JPWO2024143378A1/ja active Pending
-
2025
- 2025-06-27 US US19/252,551 patent/US20250331225A1/en active Pending