JPWO2023243556A5 - - Google Patents
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- Publication number
- JPWO2023243556A5 JPWO2023243556A5 JP2024528804A JP2024528804A JPWO2023243556A5 JP WO2023243556 A5 JPWO2023243556 A5 JP WO2023243556A5 JP 2024528804 A JP2024528804 A JP 2024528804A JP 2024528804 A JP2024528804 A JP 2024528804A JP WO2023243556 A5 JPWO2023243556 A5 JP WO2023243556A5
- Authority
- JP
- Japan
- Prior art keywords
- gate structure
- semiconductor layer
- nitride semiconductor
- active region
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 claims 27
- 239000004065 semiconductor Substances 0.000 claims 27
- 230000005669 field effect Effects 0.000 claims 19
- 239000004020 conductor Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 9
- 230000002093 peripheral effect Effects 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 3
- 230000000149 penetrating effect Effects 0.000 claims 2
- 230000005533 two-dimensional electron gas Effects 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022096669 | 2022-06-15 | ||
| PCT/JP2023/021506 WO2023243556A1 (ja) | 2022-06-15 | 2023-06-09 | 電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023243556A1 JPWO2023243556A1 (https=) | 2023-12-21 |
| JPWO2023243556A5 true JPWO2023243556A5 (https=) | 2025-02-26 |
Family
ID=89191247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024528804A Pending JPWO2023243556A1 (https=) | 2022-06-15 | 2023-06-09 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023243556A1 (https=) |
| WO (1) | WO2023243556A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026053841A1 (ja) * | 2024-09-06 | 2026-03-12 | ローム株式会社 | 半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5245305B2 (ja) * | 2007-07-06 | 2013-07-24 | サンケン電気株式会社 | 電界効果半導体装置及びその製造方法 |
| US9397168B2 (en) * | 2014-10-17 | 2016-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to define the active region of a transistor employing a group III-V semiconductor material |
| JP2017143122A (ja) * | 2016-02-09 | 2017-08-17 | 株式会社東芝 | 半導体装置 |
| US11908927B2 (en) * | 2019-02-28 | 2024-02-20 | Rohm Co., Ltd. | Nitride semiconductor device |
-
2023
- 2023-06-09 WO PCT/JP2023/021506 patent/WO2023243556A1/ja not_active Ceased
- 2023-06-09 JP JP2024528804A patent/JPWO2023243556A1/ja active Pending
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