JPWO2024150368A5 - - Google Patents

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JPWO2024150368A5
JPWO2024150368A5 JP2024569941A JP2024569941A JPWO2024150368A5 JP WO2024150368 A5 JPWO2024150368 A5 JP WO2024150368A5 JP 2024569941 A JP2024569941 A JP 2024569941A JP 2024569941 A JP2024569941 A JP 2024569941A JP WO2024150368 A5 JPWO2024150368 A5 JP WO2024150368A5
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Japan
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trench
semiconductor device
trenches
insulating film
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JP2024569941A
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Japanese (ja)
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JPWO2024150368A1 (https=
JP7851428B2 (ja
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Priority claimed from PCT/JP2023/000592 external-priority patent/WO2024150368A1/ja
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JP2024569941A 2023-01-12 2023-01-12 半導体装置、および、半導体装置の製造方法 Active JP7851428B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/000592 WO2024150368A1 (ja) 2023-01-12 2023-01-12 半導体装置、および、半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2024150368A1 JPWO2024150368A1 (https=) 2024-07-18
JPWO2024150368A5 true JPWO2024150368A5 (https=) 2025-03-27
JP7851428B2 JP7851428B2 (ja) 2026-04-24

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ID=91896554

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JP2024569941A Active JP7851428B2 (ja) 2023-01-12 2023-01-12 半導体装置、および、半導体装置の製造方法

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JP (1) JP7851428B2 (https=)
CN (1) CN120457788A (https=)
DE (1) DE112023005602T5 (https=)
WO (1) WO2024150368A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121548078B (zh) * 2026-01-19 2026-04-14 广东芯粤能半导体有限公司 集成鳍式结构的元胞结构及其制备方法、SiC功率器件

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088010A (ja) * 2005-09-20 2007-04-05 Denso Corp 半導体装置およびその製造方法
WO2013076890A1 (ja) * 2011-11-21 2013-05-30 パナソニック株式会社 半導体装置及びその製造方法
JP5790573B2 (ja) * 2012-04-03 2015-10-07 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6848317B2 (ja) * 2016-10-05 2021-03-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7196463B2 (ja) * 2018-08-23 2022-12-27 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP7331653B2 (ja) * 2019-11-19 2023-08-23 株式会社デンソー 半導体装置の製造方法
JP2021136313A (ja) * 2020-02-26 2021-09-13 株式会社日立製作所 半導体装置およびその製造方法

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