JPWO2022070304A5 - - Google Patents
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- Publication number
- JPWO2022070304A5 JPWO2022070304A5 JP2022553298A JP2022553298A JPWO2022070304A5 JP WO2022070304 A5 JPWO2022070304 A5 JP WO2022070304A5 JP 2022553298 A JP2022553298 A JP 2022553298A JP 2022553298 A JP2022553298 A JP 2022553298A JP WO2022070304 A5 JPWO2022070304 A5 JP WO2022070304A5
- Authority
- JP
- Japan
- Prior art keywords
- termination
- trench
- gate
- insulating film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/037139 WO2022070304A1 (ja) | 2020-09-30 | 2020-09-30 | 半導体装置および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022070304A1 JPWO2022070304A1 (https=) | 2022-04-07 |
| JPWO2022070304A5 true JPWO2022070304A5 (https=) | 2022-11-25 |
| JP7330392B2 JP7330392B2 (ja) | 2023-08-21 |
Family
ID=80951544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022553298A Active JP7330392B2 (ja) | 2020-09-30 | 2020-09-30 | 半導体装置および半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230246101A1 (https=) |
| JP (1) | JP7330392B2 (https=) |
| CN (1) | CN116325175B (https=) |
| DE (1) | DE112020007650T5 (https=) |
| WO (1) | WO2022070304A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117038732B (zh) * | 2023-07-15 | 2024-09-27 | 湖北九峰山实验室 | 一种宽禁带半导体沟槽mosfet器件及其制作方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6838722B2 (en) | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
| US6861701B2 (en) * | 2003-03-05 | 2005-03-01 | Advanced Analogic Technologies, Inc. | Trench power MOSFET with planarized gate bus |
| DE102005008354B4 (de) * | 2005-02-23 | 2007-12-27 | Infineon Technologies Austria Ag | Halbleiterbauteil sowie Verfahren zu dessen Herstellung |
| JP2010251422A (ja) | 2009-04-13 | 2010-11-04 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
| US8319282B2 (en) * | 2010-07-09 | 2012-11-27 | Infineon Technologies Austria Ag | High-voltage bipolar transistor with trench field plate |
| JP6135181B2 (ja) * | 2013-02-26 | 2017-05-31 | サンケン電気株式会社 | 半導体装置 |
| DE112015004374B4 (de) | 2014-09-26 | 2019-02-14 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
| CN107683530B (zh) * | 2015-06-09 | 2020-08-18 | 三菱电机株式会社 | 电力用半导体装置 |
| CN107644902A (zh) * | 2016-07-22 | 2018-01-30 | 三垦电气株式会社 | 半导体装置 |
| JP6967907B2 (ja) * | 2017-08-07 | 2021-11-17 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| US10580888B1 (en) * | 2018-08-08 | 2020-03-03 | Infineon Technologies Austria Ag | Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices |
| TWI684276B (zh) * | 2019-01-11 | 2020-02-01 | 力源半導體股份有限公司 | 溝渠式功率電晶體及其製作方法 |
-
2020
- 2020-09-30 DE DE112020007650.4T patent/DE112020007650T5/de not_active Withdrawn
- 2020-09-30 JP JP2022553298A patent/JP7330392B2/ja active Active
- 2020-09-30 US US18/018,894 patent/US20230246101A1/en not_active Abandoned
- 2020-09-30 WO PCT/JP2020/037139 patent/WO2022070304A1/ja not_active Ceased
- 2020-09-30 CN CN202080105187.5A patent/CN116325175B/zh active Active
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