DE112020007650T5 - Halbleitereinheit und verfahren zur herstellung einer halbleitereinheit - Google Patents

Halbleitereinheit und verfahren zur herstellung einer halbleitereinheit Download PDF

Info

Publication number
DE112020007650T5
DE112020007650T5 DE112020007650.4T DE112020007650T DE112020007650T5 DE 112020007650 T5 DE112020007650 T5 DE 112020007650T5 DE 112020007650 T DE112020007650 T DE 112020007650T DE 112020007650 T5 DE112020007650 T5 DE 112020007650T5
Authority
DE
Germany
Prior art keywords
termination
gate
trench
layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112020007650.4T
Other languages
German (de)
English (en)
Inventor
Toshiaki Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE112020007650T5 publication Critical patent/DE112020007650T5/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE112020007650.4T 2020-09-30 2020-09-30 Halbleitereinheit und verfahren zur herstellung einer halbleitereinheit Withdrawn DE112020007650T5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/037139 WO2022070304A1 (ja) 2020-09-30 2020-09-30 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE112020007650T5 true DE112020007650T5 (de) 2023-07-13

Family

ID=80951544

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112020007650.4T Withdrawn DE112020007650T5 (de) 2020-09-30 2020-09-30 Halbleitereinheit und verfahren zur herstellung einer halbleitereinheit

Country Status (5)

Country Link
US (1) US20230246101A1 (https=)
JP (1) JP7330392B2 (https=)
CN (1) CN116325175B (https=)
DE (1) DE112020007650T5 (https=)
WO (1) WO2022070304A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117038732B (zh) * 2023-07-15 2024-09-27 湖北九峰山实验室 一种宽禁带半导体沟槽mosfet器件及其制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006520091A (ja) 2003-03-05 2006-08-31 アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッド 平坦化したゲートバスを備えたトレンチ・パワーｍｏｓｆｅｔ

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838722B2 (en) 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
DE102005008354B4 (de) * 2005-02-23 2007-12-27 Infineon Technologies Austria Ag Halbleiterbauteil sowie Verfahren zu dessen Herstellung
JP2010251422A (ja) 2009-04-13 2010-11-04 Renesas Electronics Corp 半導体装置及びその製造方法
US8319282B2 (en) * 2010-07-09 2012-11-27 Infineon Technologies Austria Ag High-voltage bipolar transistor with trench field plate
JP6135181B2 (ja) * 2013-02-26 2017-05-31 サンケン電気株式会社 半導体装置
DE112015004374B4 (de) 2014-09-26 2019-02-14 Mitsubishi Electric Corporation Halbleitervorrichtung
CN107683530B (zh) * 2015-06-09 2020-08-18 三菱电机株式会社 电力用半导体装置
CN107644902A (zh) * 2016-07-22 2018-01-30 三垦电气株式会社 半导体装置
JP6967907B2 (ja) * 2017-08-07 2021-11-17 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US10580888B1 (en) * 2018-08-08 2020-03-03 Infineon Technologies Austria Ag Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices
TWI684276B (zh) * 2019-01-11 2020-02-01 力源半導體股份有限公司 溝渠式功率電晶體及其製作方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006520091A (ja) 2003-03-05 2006-08-31 アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッド 平坦化したゲートバスを備えたトレンチ・パワーｍｏｓｆｅｔ

Also Published As

Publication number Publication date
WO2022070304A1 (ja) 2022-04-07
CN116325175A (zh) 2023-06-23
JPWO2022070304A1 (https=) 2022-04-07
CN116325175B (zh) 2024-12-03
US20230246101A1 (en) 2023-08-03
JP7330392B2 (ja) 2023-08-21

Similar Documents

Publication Publication Date Title
DE102017210665B4 (de) Siliziumkarbid-halbleiterbauelement und verfahren zur herstellung des siliziumkarbid-halbleiterbauelements
DE112009005320B4 (de) Leistungshalbleiterbauteil und zugehöriges Verfahren
DE112016003510B4 (de) HALBLEITERVORRlCHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERVORRICHTUNG
DE102013214196B4 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE102014117780B4 (de) Halbleiterbauelement mit einer Grabenelektrode und Verfahren zur Herstellung
DE112011101442B4 (de) Halbleitervorrichtung
DE19949364B4 (de) Halbleiterbauteil mit MOS-Gate-Steuerung und Grabenstruktur sowie Verfahren zur Herstellung
DE102014107325B4 (de) Halbleiterbauelement und verfahren zum herstellen eines halbleiterbauelements
DE69621200T2 (de) Durchgriff-feldeffekttransistor
DE19539541B4 (de) Lateraler Trench-MISFET und Verfahren zu seiner Herstellung
DE102013022598B3 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE112009004744B4 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102005052731B4 (de) Siliziumkarbidhalbleitervorrichtung und Verfahren zur Herstellung derselben
DE112016006380B4 (de) Halbleiterbauelement
DE112012000748T5 (de) Siliziumcarbid-Halbleitervorrichtung und Verfahren zu deren Fertigung
DE112017003957B4 (de) Halbleitereinheit
DE102018118875B4 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE112017002113B4 (de) Halbleitereinheit
DE102015107331A1 (de) Halbleitervorrichtung und rückwärts leitender Bipolartransistor mit isoliertem Gate mit isolierten Sourcezonen
DE102018120734B4 (de) Halbleitervorrichtung, die ein übergangsmaterial in einem graben enthält, und herstellungsverfahren
DE102020122641B4 (de) Halbleitervorrichtung
DE10229146A1 (de) Laterales Superjunction-Halbleiterbauteil
DE102013201565A1 (de) Halbleiterbauelement mit einer Randabschlussstruktur
DE2607203B2 (de) Feldeffekttransistor vom Anreicherungstyp
DE112022006775T5 (de) Halbleitereinrichtung und Herstellungsverfahren für eine Halbleitereinrichtung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R084 Declaration of willingness to licence
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029780000

Ipc: H10D0030600000

R120 Application withdrawn or ip right abandoned