JPWO2023166666A5 - - Google Patents
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- Publication number
- JPWO2023166666A5 JPWO2023166666A5 JP2023524727A JP2023524727A JPWO2023166666A5 JP WO2023166666 A5 JPWO2023166666 A5 JP WO2023166666A5 JP 2023524727 A JP2023524727 A JP 2023524727A JP 2023524727 A JP2023524727 A JP 2023524727A JP WO2023166666 A5 JPWO2023166666 A5 JP WO2023166666A5
- Authority
- JP
- Japan
- Prior art keywords
- gate
- trench
- gate electrode
- insulating film
- termination trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000010410 layer Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims 4
- 239000011229 interlayer Substances 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/009146 WO2023166666A1 (ja) | 2022-03-03 | 2022-03-03 | 半導体装置および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7338813B1 JP7338813B1 (ja) | 2023-09-05 |
| JPWO2023166666A1 JPWO2023166666A1 (https=) | 2023-09-07 |
| JPWO2023166666A5 true JPWO2023166666A5 (https=) | 2024-02-06 |
Family
ID=87882198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023524727A Active JP7338813B1 (ja) | 2022-03-03 | 2022-03-03 | 半導体装置および半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250185285A1 (https=) |
| JP (1) | JP7338813B1 (https=) |
| CN (1) | CN118786531A (https=) |
| DE (1) | DE112022006775T5 (https=) |
| WO (1) | WO2023166666A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250107124A1 (en) * | 2023-09-27 | 2025-03-27 | Wolfspeed, Inc. | Power Semiconductor Device Having Shaped Trench Ends |
| WO2025134220A1 (ja) * | 2023-12-19 | 2025-06-26 | 三菱電機株式会社 | 半導体装置、および、半導体装置の製造方法 |
| WO2025143233A1 (ja) * | 2023-12-27 | 2025-07-03 | ローム株式会社 | 半導体装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001177093A (ja) * | 1999-12-20 | 2001-06-29 | Toyota Central Res & Dev Lab Inc | 絶縁ゲート型半導体装置 |
| US6861701B2 (en) | 2003-03-05 | 2005-03-01 | Advanced Analogic Technologies, Inc. | Trench power MOSFET with planarized gate bus |
| WO2007022316A2 (en) * | 2005-08-17 | 2007-02-22 | International Rectifier Corporation | Power semiconductor device with interconnected gate trenches |
| US7449354B2 (en) * | 2006-01-05 | 2008-11-11 | Fairchild Semiconductor Corporation | Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch |
| DE112015004374B4 (de) * | 2014-09-26 | 2019-02-14 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
| DE112017007186B4 (de) * | 2017-03-07 | 2024-06-27 | Mitsubishi Electric Corporation | Halbleitereinheit und leistungswandler |
| JP7201336B2 (ja) * | 2017-05-17 | 2023-01-10 | ローム株式会社 | 半導体装置 |
-
2022
- 2022-03-03 WO PCT/JP2022/009146 patent/WO2023166666A1/ja not_active Ceased
- 2022-03-03 US US18/840,521 patent/US20250185285A1/en active Pending
- 2022-03-03 JP JP2023524727A patent/JP7338813B1/ja active Active
- 2022-03-03 DE DE112022006775.6T patent/DE112022006775T5/de active Pending
- 2022-03-03 CN CN202280092813.0A patent/CN118786531A/zh active Pending
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