JPWO2024053022A5 - - Google Patents

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Publication number
JPWO2024053022A5
JPWO2024053022A5 JP2024545340A JP2024545340A JPWO2024053022A5 JP WO2024053022 A5 JPWO2024053022 A5 JP WO2024053022A5 JP 2024545340 A JP2024545340 A JP 2024545340A JP 2024545340 A JP2024545340 A JP 2024545340A JP WO2024053022 A5 JPWO2024053022 A5 JP WO2024053022A5
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JP
Japan
Prior art keywords
gate
insulating film
layer
trench
potential fixing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024545340A
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English (en)
Japanese (ja)
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JPWO2024053022A1 (https=
JP7752780B2 (ja
Publication date
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Priority claimed from PCT/JP2022/033581 external-priority patent/WO2024053022A1/ja
Publication of JPWO2024053022A1 publication Critical patent/JPWO2024053022A1/ja
Publication of JPWO2024053022A5 publication Critical patent/JPWO2024053022A5/ja
Application granted granted Critical
Publication of JP7752780B2 publication Critical patent/JP7752780B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2024545340A 2022-09-07 2022-09-07 半導体装置およびその製造方法 Active JP7752780B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/033581 WO2024053022A1 (ja) 2022-09-07 2022-09-07 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JPWO2024053022A1 JPWO2024053022A1 (https=) 2024-03-14
JPWO2024053022A5 true JPWO2024053022A5 (https=) 2025-01-08
JP7752780B2 JP7752780B2 (ja) 2025-10-10

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ID=90192496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024545340A Active JP7752780B2 (ja) 2022-09-07 2022-09-07 半導体装置およびその製造方法

Country Status (4)

Country Link
JP (1) JP7752780B2 (https=)
CN (1) CN119769193A (https=)
DE (1) DE112022007744T5 (https=)
WO (1) WO2024053022A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007189192A (ja) * 2005-12-15 2007-07-26 Toshiba Corp 半導体装置
JP2011199109A (ja) 2010-03-23 2011-10-06 Renesas Electronics Corp パワーｍｏｓｆｅｔ
JP5395309B2 (ja) 2011-03-23 2014-01-22 パナソニック株式会社 半導体装置およびその製造方法
JP2014033079A (ja) 2012-08-03 2014-02-20 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
JP2015230932A (ja) * 2014-06-04 2015-12-21 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
DE112015004374B4 (de) 2014-09-26 2019-02-14 Mitsubishi Electric Corporation Halbleitervorrichtung
JP2016152357A (ja) 2015-02-18 2016-08-22 株式会社東芝 半導体装置および半導体パッケージ
JP6532549B2 (ja) 2016-02-09 2019-06-19 三菱電機株式会社 半導体装置
DE212019000104U1 (de) * 2018-08-07 2020-02-19 Rohm Co., Ltd. SiC-Halbleitervorrichtung

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