JPWO2023189161A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2023189161A5 JPWO2023189161A5 JP2024511536A JP2024511536A JPWO2023189161A5 JP WO2023189161 A5 JPWO2023189161 A5 JP WO2023189161A5 JP 2024511536 A JP2024511536 A JP 2024511536A JP 2024511536 A JP2024511536 A JP 2024511536A JP WO2023189161 A5 JPWO2023189161 A5 JP WO2023189161A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- trench
- semiconductor device
- potential
- conductive polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 7
- 229920005591 polysilicon Polymers 0.000 claims 7
- 238000009413 insulation Methods 0.000 claims 6
- 238000002955 isolation Methods 0.000 claims 6
- 239000002344 surface layer Substances 0.000 claims 3
- 210000000746 body region Anatomy 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 230000007423 decrease Effects 0.000 claims 1
- 238000005192 partition Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022053290 | 2022-03-29 | ||
| PCT/JP2023/007747 WO2023189161A1 (ja) | 2022-03-29 | 2023-03-02 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023189161A1 JPWO2023189161A1 (https=) | 2023-10-05 |
| JPWO2023189161A5 true JPWO2023189161A5 (https=) | 2024-12-10 |
Family
ID=88201241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511536A Pending JPWO2023189161A1 (https=) | 2022-03-29 | 2023-03-02 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023189161A1 (https=) |
| WO (1) | WO2023189161A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020162620A1 (ja) * | 2019-02-07 | 2020-08-13 | ローム株式会社 | 半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4379013B2 (ja) * | 2003-06-25 | 2009-12-09 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
| JP2005303253A (ja) * | 2004-03-18 | 2005-10-27 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
| JP5087816B2 (ja) * | 2004-12-15 | 2012-12-05 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| JP5371358B2 (ja) * | 2008-09-29 | 2013-12-18 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
-
2023
- 2023-03-02 JP JP2024511536A patent/JPWO2023189161A1/ja active Pending
- 2023-03-02 WO PCT/JP2023/007747 patent/WO2023189161A1/ja not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5118270B2 (ja) | 埋め込みゲートを有するｍｏｓゲート装置 | |
| CN111370485B (zh) | 沟槽型垂直双扩散金属氧化物半导体场效应晶体管 | |
| CN105009286B (zh) | 具有增大沟道区有效宽度的非易失性存储器单元及其制作方法 | |
| CN111816707B (zh) | 消除体内曲率效应的等势降场器件及其制造方法 | |
| CN108231765A (zh) | 半导体器件 | |
| JP6792345B2 (ja) | 半導体装置の製造方法 | |
| TW201340326A (zh) | 用於在溝槽功率ｍｏｓｆｅｔｓ中優化端接設計的不對稱多晶矽柵極的製備方法 | |
| CN102270661A (zh) | 单边栅极鳍状场效晶体管及其制造方法 | |
| US10475916B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN106549052B (zh) | 横向扩散金属氧化物半导体晶体管及其制作方法 | |
| KR20070094582A (ko) | 보이드가 한정된 한 쌍의 핀들을 갖는 비휘발성 메모리소자 | |
| WO2021232792A1 (zh) | 沟槽栅vdmos器件及其制备方法 | |
| CN111200018A (zh) | 半导体器件及半导体器件制备方法 | |
| JPWO2023106152A5 (https=) | ||
| JP2022151587A5 (https=) | ||
| JPWO2021100206A5 (https=) | ||
| CN110718585A (zh) | Ldmos器件及其制造方法 | |
| JPWO2022264694A5 (https=) | ||
| JPWO2023189161A5 (https=) | ||
| JPWO2024203661A5 (https=) | ||
| JPWO2023013200A5 (https=) | ||
| JP5388495B2 (ja) | 半導体装置 | |
| CN119317157B (zh) | 一种功率半导体器件版图 | |
| JP2022139078A5 (https=) | ||
| CN119300425B (zh) | 一种功率半导体器件版图 |