JPWO2023013200A5 - - Google Patents

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Publication number
JPWO2023013200A5
JPWO2023013200A5 JP2023539657A JP2023539657A JPWO2023013200A5 JP WO2023013200 A5 JPWO2023013200 A5 JP WO2023013200A5 JP 2023539657 A JP2023539657 A JP 2023539657A JP 2023539657 A JP2023539657 A JP 2023539657A JP WO2023013200 A5 JPWO2023013200 A5 JP WO2023013200A5
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JP
Japan
Prior art keywords
region
trench
semiconductor device
main surface
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023539657A
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English (en)
Japanese (ja)
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JPWO2023013200A1 (https=
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Application filed filed Critical
Priority claimed from PCT/JP2022/019924 external-priority patent/WO2023013200A1/ja
Publication of JPWO2023013200A1 publication Critical patent/JPWO2023013200A1/ja
Publication of JPWO2023013200A5 publication Critical patent/JPWO2023013200A5/ja
Pending legal-status Critical Current

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JP2023539657A 2021-08-05 2022-05-11 Pending JPWO2023013200A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021128850 2021-08-05
PCT/JP2022/019924 WO2023013200A1 (ja) 2021-08-05 2022-05-11 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023013200A1 JPWO2023013200A1 (https=) 2023-02-09
JPWO2023013200A5 true JPWO2023013200A5 (https=) 2024-04-26

Family

ID=85155640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023539657A Pending JPWO2023013200A1 (https=) 2021-08-05 2022-05-11

Country Status (5)

Country Link
US (1) US20240178316A1 (https=)
JP (1) JPWO2023013200A1 (https=)
CN (1) CN117751455A (https=)
TW (1) TW202308039A (https=)
WO (1) WO2023013200A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7701303B2 (ja) * 2022-04-11 2025-07-01 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03160761A (ja) * 1989-11-17 1991-07-10 Fujitsu Ltd 半導体装置
JPH04259258A (ja) * 1991-02-14 1992-09-14 Nissan Motor Co Ltd Ｍｉｓ電界効果形半導体装置の製造方法
JP4857487B2 (ja) * 2001-05-30 2012-01-18 富士電機株式会社 トレンチ型半導体装置の製造方法
EP1786031A1 (en) * 2005-11-10 2007-05-16 STMicroelectronics S.r.l. Vertical-gate mos transistor for high voltage applications with variable gate oxide thickness
US9412881B2 (en) * 2012-07-31 2016-08-09 Silanna Asia Pte Ltd Power device integration on a common substrate

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