JPWO2025023128A5 - - Google Patents

Info

Publication number
JPWO2025023128A5
JPWO2025023128A5 JP2025535766A JP2025535766A JPWO2025023128A5 JP WO2025023128 A5 JPWO2025023128 A5 JP WO2025023128A5 JP 2025535766 A JP2025535766 A JP 2025535766A JP 2025535766 A JP2025535766 A JP 2025535766A JP WO2025023128 A5 JPWO2025023128 A5 JP WO2025023128A5
Authority
JP
Japan
Prior art keywords
region
semiconductor device
concentration
gate structure
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025535766A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025023128A1 (https=
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/025692 external-priority patent/WO2025023128A1/ja
Publication of JPWO2025023128A1 publication Critical patent/JPWO2025023128A1/ja
Publication of JPWO2025023128A5 publication Critical patent/JPWO2025023128A5/ja
Pending legal-status Critical Current

Links

JP2025535766A 2023-07-21 2024-07-17 Pending JPWO2025023128A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023119281 2023-07-21
PCT/JP2024/025692 WO2025023128A1 (ja) 2023-07-21 2024-07-17 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2025023128A1 JPWO2025023128A1 (https=) 2025-01-30
JPWO2025023128A5 true JPWO2025023128A5 (https=) 2026-04-21

Family

ID=94374434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025535766A Pending JPWO2025023128A1 (https=) 2023-07-21 2024-07-17

Country Status (2)

Country Link
JP (1) JPWO2025023128A1 (https=)
WO (1) WO2025023128A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3158973B2 (ja) * 1995-07-20 2001-04-23 富士電機株式会社 炭化けい素縦型fet
JP2009283540A (ja) * 2008-05-20 2009-12-03 Denso Corp 炭化珪素半導体装置およびその製造方法
US9293558B2 (en) * 2012-11-26 2016-03-22 Infineon Technologies Austria Ag Semiconductor device
WO2019244681A1 (ja) * 2018-06-21 2019-12-26 富士電機株式会社 半導体装置および製造方法
WO2020084736A1 (ja) * 2018-10-25 2020-04-30 三菱電機株式会社 半導体装置、電力変換装置及び半導体装置の製造方法
JP7712617B2 (ja) * 2021-09-16 2025-07-24 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機

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