JPWO2023189060A5 - - Google Patents
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- Publication number
- JPWO2023189060A5 JPWO2023189060A5 JP2024511477A JP2024511477A JPWO2023189060A5 JP WO2023189060 A5 JPWO2023189060 A5 JP WO2023189060A5 JP 2024511477 A JP2024511477 A JP 2024511477A JP 2024511477 A JP2024511477 A JP 2024511477A JP WO2023189060 A5 JPWO2023189060 A5 JP WO2023189060A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- impurity concentration
- sic semiconductor
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 20
- 239000012535 impurity Substances 0.000 claims 18
- 210000000746 body region Anatomy 0.000 claims 10
- 239000013078 crystal Substances 0.000 claims 6
- 239000002344 surface layer Substances 0.000 claims 5
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022061145 | 2022-03-31 | ||
| PCT/JP2023/006639 WO2023189060A1 (ja) | 2022-03-31 | 2023-02-24 | ＳｉＣ半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023189060A1 JPWO2023189060A1 (https=) | 2023-10-05 |
| JPWO2023189060A5 true JPWO2023189060A5 (https=) | 2024-12-10 |
Family
ID=88200479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511477A Pending JPWO2023189060A1 (https=) | 2022-03-31 | 2023-02-24 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20250022920A1 (https=) |
| JP (1) | JPWO2023189060A1 (https=) |
| WO (1) | WO2023189060A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102024202658A1 (de) * | 2024-03-20 | 2025-09-25 | Infineon Technologies Ag | Leistungshalbleitervorrichtung und Verfahren zum Herstellen einer Leistungshalbleitervorrichtung |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015103067B3 (de) * | 2015-03-03 | 2016-09-01 | Infineon Technologies Ag | Halbleitervorrichtung mit trenchgatestrukturen in einem halbleiterkörper mit hexagonalem kristallgitter |
| JP7067021B2 (ja) * | 2017-11-07 | 2022-05-16 | 富士電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
| DE212019000104U1 (de) * | 2018-08-07 | 2020-02-19 | Rohm Co., Ltd. | SiC-Halbleitervorrichtung |
| JP7246237B2 (ja) * | 2019-04-15 | 2023-03-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2023
- 2023-02-24 JP JP2024511477A patent/JPWO2023189060A1/ja active Pending
- 2023-02-24 WO PCT/JP2023/006639 patent/WO2023189060A1/ja not_active Ceased
-
2024
- 2024-09-30 US US18/901,248 patent/US20250022920A1/en active Pending
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