JPWO2023189060A5 - - Google Patents

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Publication number
JPWO2023189060A5
JPWO2023189060A5 JP2024511477A JP2024511477A JPWO2023189060A5 JP WO2023189060 A5 JPWO2023189060 A5 JP WO2023189060A5 JP 2024511477 A JP2024511477 A JP 2024511477A JP 2024511477 A JP2024511477 A JP 2024511477A JP WO2023189060 A5 JPWO2023189060 A5 JP WO2023189060A5
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JP
Japan
Prior art keywords
region
semiconductor device
impurity concentration
sic semiconductor
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024511477A
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English (en)
Japanese (ja)
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JPWO2023189060A1 (https=
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Application filed filed Critical
Priority claimed from PCT/JP2023/006639 external-priority patent/WO2023189060A1/ja
Publication of JPWO2023189060A1 publication Critical patent/JPWO2023189060A1/ja
Publication of JPWO2023189060A5 publication Critical patent/JPWO2023189060A5/ja
Pending legal-status Critical Current

Links

JP2024511477A 2022-03-31 2023-02-24 Pending JPWO2023189060A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022061145 2022-03-31
PCT/JP2023/006639 WO2023189060A1 (ja) 2022-03-31 2023-02-24 ＳｉＣ半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023189060A1 JPWO2023189060A1 (https=) 2023-10-05
JPWO2023189060A5 true JPWO2023189060A5 (https=) 2024-12-10

Family

ID=88200479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024511477A Pending JPWO2023189060A1 (https=) 2022-03-31 2023-02-24

Country Status (3)

Country Link
US (1) US20250022920A1 (https=)
JP (1) JPWO2023189060A1 (https=)
WO (1) WO2023189060A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102024202658A1 (de) * 2024-03-20 2025-09-25 Infineon Technologies Ag Leistungshalbleitervorrichtung und Verfahren zum Herstellen einer Leistungshalbleitervorrichtung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015103067B3 (de) * 2015-03-03 2016-09-01 Infineon Technologies Ag Halbleitervorrichtung mit trenchgatestrukturen in einem halbleiterkörper mit hexagonalem kristallgitter
JP7067021B2 (ja) * 2017-11-07 2022-05-16 富士電機株式会社 絶縁ゲート型半導体装置及びその製造方法
US12080760B2 (en) * 2018-08-07 2024-09-03 Rohm Co., Ltd. SiC semiconductor device
JP7246237B2 (ja) * 2019-04-15 2023-03-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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