JPWO2023189057A5 - - Google Patents
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- Publication number
- JPWO2023189057A5 JPWO2023189057A5 JP2024511474A JP2024511474A JPWO2023189057A5 JP WO2023189057 A5 JPWO2023189057 A5 JP WO2023189057A5 JP 2024511474 A JP2024511474 A JP 2024511474A JP 2024511474 A JP2024511474 A JP 2024511474A JP WO2023189057 A5 JPWO2023189057 A5 JP WO2023189057A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- region
- trench structure
- sic semiconductor
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 20
- 210000000746 body region Anatomy 0.000 claims 7
- 239000013078 crystal Substances 0.000 claims 6
- 239000002344 surface layer Substances 0.000 claims 5
- 239000012535 impurity Substances 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022061147 | 2022-03-31 | ||
| PCT/JP2023/006636 WO2023189057A1 (ja) | 2022-03-31 | 2023-02-24 | ＳｉＣ半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023189057A1 JPWO2023189057A1 (https=) | 2023-10-05 |
| JPWO2023189057A5 true JPWO2023189057A5 (https=) | 2024-12-10 |
Family
ID=88200455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511474A Pending JPWO2023189057A1 (https=) | 2022-03-31 | 2023-02-24 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250022926A1 (https=) |
| JP (1) | JPWO2023189057A1 (https=) |
| CN (1) | CN118974944A (https=) |
| WO (1) | WO2023189057A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015103067B3 (de) * | 2015-03-03 | 2016-09-01 | Infineon Technologies Ag | Halbleitervorrichtung mit trenchgatestrukturen in einem halbleiterkörper mit hexagonalem kristallgitter |
| JP7067021B2 (ja) * | 2017-11-07 | 2022-05-16 | 富士電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
| DE212019000104U1 (de) * | 2018-08-07 | 2020-02-19 | Rohm Co., Ltd. | SiC-Halbleitervorrichtung |
| JP7246237B2 (ja) * | 2019-04-15 | 2023-03-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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2023
- 2023-02-24 WO PCT/JP2023/006636 patent/WO2023189057A1/ja not_active Ceased
- 2023-02-24 JP JP2024511474A patent/JPWO2023189057A1/ja active Pending
- 2023-02-24 CN CN202380032222.9A patent/CN118974944A/zh active Pending
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2024
- 2024-09-30 US US18/900,986 patent/US20250022926A1/en active Pending