JPWO2023181749A5 - - Google Patents
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- Publication number
- JPWO2023181749A5 JPWO2023181749A5 JP2024509855A JP2024509855A JPWO2023181749A5 JP WO2023181749 A5 JPWO2023181749 A5 JP WO2023181749A5 JP 2024509855 A JP2024509855 A JP 2024509855A JP 2024509855 A JP2024509855 A JP 2024509855A JP WO2023181749 A5 JPWO2023181749 A5 JP WO2023181749A5
- Authority
- JP
- Japan
- Prior art keywords
- barrier layer
- layer
- semiconductor device
- gate electrode
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims 35
- 239000004065 semiconductor Substances 0.000 claims 17
- 125000006850 spacer group Chemical group 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 3
- 230000005533 two-dimensional electron gas Effects 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 230000001154 acute effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263323736P | 2022-03-25 | 2022-03-25 | |
| US63/323,736 | 2022-03-25 | ||
| PCT/JP2023/006048 WO2023181749A1 (ja) | 2022-03-25 | 2023-02-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023181749A1 JPWO2023181749A1 (https=) | 2023-09-28 |
| JPWO2023181749A5 true JPWO2023181749A5 (https=) | 2024-08-16 |
| JP7578862B2 JP7578862B2 (ja) | 2024-11-06 |
Family
ID=88100497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024509855A Active JP7578862B2 (ja) | 2022-03-25 | 2023-02-20 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12477771B2 (https=) |
| JP (1) | JP7578862B2 (https=) |
| WO (1) | WO2023181749A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119967854B (zh) * | 2025-01-17 | 2025-12-02 | 西安电子科技大学 | MIM型栅极GaN P沟道场效应管及其制备方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2456662A1 (en) * | 2001-08-07 | 2003-02-20 | Jan Kuzmik | High electron mobility devices |
| US7859021B2 (en) | 2007-08-29 | 2010-12-28 | Sanken Electric Co., Ltd. | Field-effect semiconductor device |
| JP5487550B2 (ja) | 2007-08-29 | 2014-05-07 | サンケン電気株式会社 | 電界効果半導体装置及びその製造方法 |
| US8309987B2 (en) * | 2008-07-15 | 2012-11-13 | Imec | Enhancement mode semiconductor device |
| US7985986B2 (en) * | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
| US20100148153A1 (en) | 2008-12-16 | 2010-06-17 | Hudait Mantu K | Group III-V devices with delta-doped layer under channel region |
| US8624260B2 (en) * | 2010-01-30 | 2014-01-07 | National Semiconductor Corporation | Enhancement-mode GaN MOSFET with low leakage current and improved reliability |
| KR20120027988A (ko) * | 2010-09-14 | 2012-03-22 | 삼성엘이디 주식회사 | 질화갈륨계 반도체소자 및 그 제조방법 |
| US8853709B2 (en) * | 2011-07-29 | 2014-10-07 | Hrl Laboratories, Llc | III-nitride metal insulator semiconductor field effect transistor |
| JP5913816B2 (ja) * | 2011-02-21 | 2016-04-27 | 富士通株式会社 | 半導体装置の製造方法 |
| TWI587512B (zh) * | 2011-05-16 | 2017-06-11 | 瑞薩電子股份有限公司 | Field effect transistor and semiconductor device |
| CN103620751B (zh) | 2011-07-12 | 2017-08-01 | 松下知识产权经营株式会社 | 氮化物半导体装置及其制造方法 |
| US8941118B1 (en) * | 2011-07-29 | 2015-01-27 | Hrl Laboratories, Llc | Normally-off III-nitride transistors with high threshold-voltage and low on-resistance |
| JP5662367B2 (ja) | 2012-03-26 | 2015-01-28 | 株式会社東芝 | 窒化物半導体装置およびその製造方法 |
| KR101980197B1 (ko) * | 2012-09-04 | 2019-05-20 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 및 그 제조방법 |
| JP2014072397A (ja) | 2012-09-28 | 2014-04-21 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
| WO2014078699A1 (en) | 2012-11-16 | 2014-05-22 | Massachusetts Institute Of Technology | Semiconductor structure and recess formation etch technique |
| JP6220161B2 (ja) * | 2013-06-03 | 2017-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP6462393B2 (ja) * | 2015-02-10 | 2019-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| US9502535B2 (en) * | 2015-04-10 | 2016-11-22 | Cambridge Electronics, Inc. | Semiconductor structure and etch technique for monolithic integration of III-N transistors |
| US9812532B1 (en) * | 2015-08-28 | 2017-11-07 | Hrl Laboratories, Llc | III-nitride P-channel transistor |
| CN108292678B (zh) * | 2015-11-19 | 2021-07-06 | Hrl实验室有限责任公司 | 具有双栅极的iii族氮化物场效应晶体管 |
| CN110914961B (zh) * | 2017-07-07 | 2023-10-10 | 松下控股株式会社 | 半导体装置 |
| FR3074359B1 (fr) * | 2017-11-28 | 2025-01-31 | Commissariat Energie Atomique | Composant electronique a heterojonction muni d'une couche barriere enterree amelioree |
| CN110034186B (zh) | 2018-01-12 | 2021-03-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于复合势垒层结构的iii族氮化物增强型hemt及其制作方法 |
| CN112652659B (zh) * | 2019-10-09 | 2024-02-13 | 联华电子股份有限公司 | 高电子迁移率晶体管及其制作方法 |
| US11973134B2 (en) * | 2020-03-26 | 2024-04-30 | Mitsubishi Electric Research Laboratories, Inc. | Super junction gated AlGaN GaN HEMT |
| KR102792554B1 (ko) * | 2020-06-23 | 2025-04-08 | 삼성전자주식회사 | 고 전자 이동도 트랜지스터 및 그 제조방법 |
| US20220069114A1 (en) * | 2020-08-28 | 2022-03-03 | Hrl Laboratories, Llc | Self-passivated nitrogen-polar iii-nitride transistor |
-
2023
- 2023-02-20 US US18/848,769 patent/US12477771B2/en active Active
- 2023-02-20 JP JP2024509855A patent/JP7578862B2/ja active Active
- 2023-02-20 WO PCT/JP2023/006048 patent/WO2023181749A1/ja not_active Ceased
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