JPWO2024116612A5 - - Google Patents

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Publication number
JPWO2024116612A5
JPWO2024116612A5 JP2024561220A JP2024561220A JPWO2024116612A5 JP WO2024116612 A5 JPWO2024116612 A5 JP WO2024116612A5 JP 2024561220 A JP2024561220 A JP 2024561220A JP 2024561220 A JP2024561220 A JP 2024561220A JP WO2024116612 A5 JPWO2024116612 A5 JP WO2024116612A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
gate electrode
nitride
semiconductor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024561220A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024116612A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/036963 external-priority patent/WO2024116612A1/ja
Publication of JPWO2024116612A1 publication Critical patent/JPWO2024116612A1/ja
Publication of JPWO2024116612A5 publication Critical patent/JPWO2024116612A5/ja
Pending legal-status Critical Current

Links

JP2024561220A 2022-11-30 2023-10-12 Pending JPWO2024116612A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022191497 2022-11-30
PCT/JP2023/036963 WO2024116612A1 (ja) 2022-11-30 2023-10-12 窒化物半導体デバイス

Publications (2)

Publication Number Publication Date
JPWO2024116612A1 JPWO2024116612A1 (https=) 2024-06-06
JPWO2024116612A5 true JPWO2024116612A5 (https=) 2025-08-08

Family

ID=91323592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024561220A Pending JPWO2024116612A1 (https=) 2022-11-30 2023-10-12

Country Status (3)

Country Link
US (1) US20250275170A1 (https=)
JP (1) JPWO2024116612A1 (https=)
WO (1) WO2024116612A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118943180B (zh) * 2024-07-29 2025-09-23 深圳市汇芯通信技术有限公司 半导体器件及其制备方法
CN118943179B (zh) * 2024-07-29 2025-09-23 深圳市汇芯通信技术有限公司 半导体器件及其制备方法
CN118943178B (zh) * 2024-07-29 2025-11-11 深圳市汇芯通信技术有限公司 半导体器件及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225765A (ja) * 2009-03-23 2010-10-07 Panasonic Corp 半導体装置及びその製造方法
KR20150000115A (ko) * 2013-06-24 2015-01-02 서울반도체 주식회사 수직형 채널을 구비하는 질화물계 트랜지스터 및 이의 제조 방법
JP6229172B2 (ja) * 2013-07-12 2017-11-15 パナソニックＩｐマネジメント株式会社 半導体装置
JP7195306B2 (ja) * 2018-03-27 2022-12-23 パナソニックホールディングス株式会社 窒化物半導体装置
JP2021114496A (ja) * 2020-01-16 2021-08-05 信一郎 高谷 縦型窒化物半導体トランジスタ装置
WO2022176455A1 (ja) * 2021-02-16 2022-08-25 パナソニックホールディングス株式会社 窒化物半導体デバイス

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