JP7578862B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7578862B2
JP7578862B2 JP2024509855A JP2024509855A JP7578862B2 JP 7578862 B2 JP7578862 B2 JP 7578862B2 JP 2024509855 A JP2024509855 A JP 2024509855A JP 2024509855 A JP2024509855 A JP 2024509855A JP 7578862 B2 JP7578862 B2 JP 7578862B2
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barrier layer
layer
gate electrode
semiconductor device
drain electrode
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Japanese (ja)
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JPWO2023181749A1 (https=
JPWO2023181749A5 (https=
Inventor
裕介 神田
順 清水
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge

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  • Junction Field-Effect Transistors (AREA)
JP2024509855A 2022-03-25 2023-02-20 半導体装置 Active JP7578862B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263323736P 2022-03-25 2022-03-25
US63/323,736 2022-03-25
PCT/JP2023/006048 WO2023181749A1 (ja) 2022-03-25 2023-02-20 半導体装置

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JPWO2023181749A1 JPWO2023181749A1 (https=) 2023-09-28
JPWO2023181749A5 JPWO2023181749A5 (https=) 2024-08-16
JP7578862B2 true JP7578862B2 (ja) 2024-11-06

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US (1) US12477771B2 (https=)
JP (1) JP7578862B2 (https=)
WO (1) WO2023181749A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119967854B (zh) * 2025-01-17 2025-12-02 西安电子科技大学 MIM型栅极GaN P沟道场效应管及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009076845A (ja) 2007-08-29 2009-04-09 Sanken Electric Co Ltd 電界効果半導体装置及びその製造方法
JP2012510172A (ja) 2008-12-16 2012-04-26 インテル コーポレイション チャネル領域の下方にデルタドープ層を有するｉｉｉ−ｖ族デバイス
JP2014072397A (ja) 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2015536570A (ja) 2012-11-16 2015-12-21 マサチューセッツ インスティテュート オブ テクノロジー 半導体構造およびリセス形成のエッチング技術
US20160300835A1 (en) 2015-04-10 2016-10-13 Cambridge Electronics, Inc. Semiconductor structure and etch technique for monolithic integration of iii-n transistors
JP2021510461A (ja) 2018-01-12 2021-04-22 中国科学院蘇州納米技術与納米▲ファン▼生研究所 複合バリア層構造に基づくｉｉｉ族窒化物エンハンスメント型ｈｅｍｔ及びその製造方法

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US7859021B2 (en) 2007-08-29 2010-12-28 Sanken Electric Co., Ltd. Field-effect semiconductor device
US8309987B2 (en) * 2008-07-15 2012-11-13 Imec Enhancement mode semiconductor device
US7985986B2 (en) * 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
US8624260B2 (en) * 2010-01-30 2014-01-07 National Semiconductor Corporation Enhancement-mode GaN MOSFET with low leakage current and improved reliability
KR20120027988A (ko) * 2010-09-14 2012-03-22 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법
US8853709B2 (en) * 2011-07-29 2014-10-07 Hrl Laboratories, Llc III-nitride metal insulator semiconductor field effect transistor
JP5913816B2 (ja) * 2011-02-21 2016-04-27 富士通株式会社 半導体装置の製造方法
TWI587512B (zh) * 2011-05-16 2017-06-11 瑞薩電子股份有限公司 Field effect transistor and semiconductor device
CN103620751B (zh) 2011-07-12 2017-08-01 松下知识产权经营株式会社 氮化物半导体装置及其制造方法
US8941118B1 (en) * 2011-07-29 2015-01-27 Hrl Laboratories, Llc Normally-off III-nitride transistors with high threshold-voltage and low on-resistance
JP5662367B2 (ja) 2012-03-26 2015-01-28 株式会社東芝 窒化物半導体装置およびその製造方法
KR101980197B1 (ko) * 2012-09-04 2019-05-20 삼성전자주식회사 고전자 이동도 트랜지스터 및 그 제조방법
JP6220161B2 (ja) * 2013-06-03 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6462393B2 (ja) * 2015-02-10 2019-01-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US9812532B1 (en) * 2015-08-28 2017-11-07 Hrl Laboratories, Llc III-nitride P-channel transistor
CN108292678B (zh) * 2015-11-19 2021-07-06 Hrl实验室有限责任公司 具有双栅极的iii族氮化物场效应晶体管
CN110914961B (zh) * 2017-07-07 2023-10-10 松下控股株式会社 半导体装置
FR3074359B1 (fr) * 2017-11-28 2025-01-31 Commissariat Energie Atomique Composant electronique a heterojonction muni d'une couche barriere enterree amelioree
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Publication number Priority date Publication date Assignee Title
JP2009076845A (ja) 2007-08-29 2009-04-09 Sanken Electric Co Ltd 電界効果半導体装置及びその製造方法
JP2012510172A (ja) 2008-12-16 2012-04-26 インテル コーポレイション チャネル領域の下方にデルタドープ層を有するｉｉｉ−ｖ族デバイス
JP2014072397A (ja) 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2015536570A (ja) 2012-11-16 2015-12-21 マサチューセッツ インスティテュート オブ テクノロジー 半導体構造およびリセス形成のエッチング技術
US20160300835A1 (en) 2015-04-10 2016-10-13 Cambridge Electronics, Inc. Semiconductor structure and etch technique for monolithic integration of iii-n transistors
JP2021510461A (ja) 2018-01-12 2021-04-22 中国科学院蘇州納米技術与納米▲ファン▼生研究所 複合バリア層構造に基づくｉｉｉ族窒化物エンハンスメント型ｈｅｍｔ及びその製造方法

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US20250113526A1 (en) 2025-04-03
WO2023181749A1 (ja) 2023-09-28
JPWO2023181749A1 (https=) 2023-09-28
US12477771B2 (en) 2025-11-18

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