JP2012510172A - チャネル領域の下方にデルタドープ層を有するiii−v族デバイス - Google Patents
チャネル領域の下方にデルタドープ層を有するiii−v族デバイス Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 68
- 230000004888 barrier function Effects 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 44
- 125000006850 spacer group Chemical group 0.000 claims description 11
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 28
- 230000006911 nucleation Effects 0.000 description 16
- 238000010899 nucleation Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000003877 atomic layer epitaxy Methods 0.000 description 4
- 238000004871 chemical beam epitaxy Methods 0.000 description 4
- 238000004211 migration-enhanced epitaxy Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- -1 devices Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910017414 LaAl Inorganic materials 0.000 description 1
- DFXZOVNXZVSTLY-UHFFFAOYSA-N [Si+4].[GeH3+]=O Chemical compound [Si+4].[GeH3+]=O DFXZOVNXZVSTLY-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7784—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with delta or planar doped donor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
- H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (20)
- InAlAsを有する下部バリア領域;
前記下部バリア領域の頂部上のデルタドープ領域;
前記デルタドープ領域の頂部上の、InGaAsを有する量子井戸チャネル領域;
前記量子井戸チャネル領域の頂部上の、InAlAsを有する第1の上部バリア領域;及び
前記上部バリア領域の頂部上のゲート電極;
を有するデバイス。 - 前記ゲート電極と前記第1の上部バリア領域との間のゲート誘電体と、前記ゲート電極の第1の側のソース領域と、前記ゲート電極の前記第1の側とは反対側の第2の側のドレイン領域と、を更に有する請求項1に記載のデバイス。
- 前記ゲート電極は金属を有する、請求項1に記載のデバイス。
- 前記下部バリア領域の下の、Siを有する基板、を更に有する請求項1に記載のデバイス。
- 前記基板と前記下部バリア領域との間のバッファ領域、を更に有する請求項4に記載のデバイス。
- 前記第1の上部バリア領域と前記ゲート電極との間の、InPを有する第2の上部バリア領域、を更に有する請求項1に記載のデバイス。
- 前記第2の上部バリア領域と前記ゲート電極との間の、high−k材料を有するゲート誘電体領域、を更に有する請求項6に記載のデバイス。
- 前記ゲート誘電体領域は、HfO2、Al2O3又はTaO5を有する、請求項7に記載のデバイス。
- 20nm以下のゲート長を有するトランジスタである請求項1に記載のデバイス。
- 基板;
前記基板上の、III−V族材料を有する量子井戸チャネル領域;
前記量子井戸チャネル領域と前記基板との間のデルタドープ領域;
を有する半導体デバイス。 - 当該デバイスはトランジスタであり、該トランジスタは更に:
前記量子井戸チャネル領域上の第1の上部バリア領域;及び
前記量子井戸チャネル領域の下方の下部バリア領域;
を有する、請求項10に記載のデバイス。 - 前記上部バリア領域及び前記下部バリア領域の双方がInyAl1−yAs材料を有し、yは0.52と0.70との間である、請求項11に記載のデバイス。
- 前記デルタドープ領域は、前記下部バリア領域と実質的に同じ材料にドーパントを加えた材料を有する、請求項11に記載のデバイス。
- 前記量子井戸チャネル領域は、InxGa1−xAs材料を有し、xは0.53と1.0との間である、請求項11に記載のデバイス。
- 前記デルタドープ領域と前記量子井戸チャネル領域との間のスペーサ領域、を更に有する請求項11に記載のデバイス。
- 前記第1の上部バリア領域上のhigh−kゲート誘電体領域;
前記high−kゲート誘電体領域上の、金属を有するゲート電極;
前記high−kゲート誘電体領域の第1の側のソースコンタクト;及び
前記high−kゲート誘電体領域の前記第1の側とは反対側の第2の側のドレインコンタクト;
を更に有する請求項15に記載のデバイス。 - 前記第1の上部バリア領域と前記high−kゲート誘電体領域との間の、InPを有する第2の上部バリア領域、を更に有する請求項16に記載のデバイス。
- 前記トランジスタは、前記量子井戸チャネル領域の上部内に2次元電子ガスを生成するように動作する、請求項11に記載のデバイス。
- 当該デバイスは、前記量子井戸チャネル領域の上方にはデルタドープ領域を含んでいない、請求項11に記載のデバイス。
- シリコンを有する基板;
前記基板上のバッファ層であり、傾斜されたInyAl1−yAs材料を有し、yは前記基板からの距離が増大するにつれて大きくなる、バッファ層;
前記バッファ層上の下部バリア層であり、InyAl1−yAs材料を有し、yは0.52と0.70との間である、下部バリア層;
前記下部バリア層上のデルタドープ層であり、前記下部バリア層の前記InyAl1−yAs材料と実質的に同じものにドーパントを加えたInyAl1−yAs材料を有するデルタドープ層;
前記デルタドープ層上の量子井戸チャネル層であり、InxGa1−xAs材料を有し、xは0.53と1.0との間である、量子井戸チャネル層;
前記量子井戸チャネル層上の第1の上部バリア層であり、前記下部バリア層と実質的に同じ材料からなる第1の上部バリア層;
前記第1の上部バリア層上の第2の上部バリア層であり、InPを有する第2の上部バリア層;
前記第2の上部バリア層上のhigh−kゲート誘電体層;
前記high−kゲート誘電体層上のゲート電極であり、金属を有するゲート電極;
前記ゲート電極の第1の側のソースコンタクトであり、InGaAsを有するソースコンタクト;及び
前記ゲート電極の前記第1の側とは反対側の第2の側のドレインコンタクトであり、InGaAsを有するドレインコンタクト;
を有するトランジスタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/316,878 US20100148153A1 (en) | 2008-12-16 | 2008-12-16 | Group III-V devices with delta-doped layer under channel region |
US12/316,878 | 2008-12-16 | ||
PCT/US2009/066432 WO2010074906A2 (en) | 2008-12-16 | 2009-12-02 | Group iii-v devices with delta-doped layer under channel region |
Publications (1)
Publication Number | Publication Date |
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JP2012510172A true JP2012510172A (ja) | 2012-04-26 |
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JP2011537748A Pending JP2012510172A (ja) | 2008-12-16 | 2009-12-02 | チャネル領域の下方にデルタドープ層を有するiii−v族デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100148153A1 (ja) |
EP (1) | EP2359405A4 (ja) |
JP (1) | JP2012510172A (ja) |
KR (1) | KR101252937B1 (ja) |
CN (1) | CN102171831A (ja) |
TW (1) | TWI441337B (ja) |
WO (1) | WO2010074906A2 (ja) |
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JP2016152404A (ja) * | 2015-02-19 | 2016-08-22 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
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WO2019133013A1 (en) * | 2017-12-30 | 2019-07-04 | Intel Corporation | Source to channel junction for iii-v metal-oxide-semiconductor field effect transistors (mosfets) |
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Also Published As
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EP2359405A2 (en) | 2011-08-24 |
US20100148153A1 (en) | 2010-06-17 |
WO2010074906A2 (en) | 2010-07-01 |
WO2010074906A3 (en) | 2010-09-16 |
KR20110051271A (ko) | 2011-05-17 |
EP2359405A4 (en) | 2013-04-10 |
TW201034196A (en) | 2010-09-16 |
KR101252937B1 (ko) | 2013-04-09 |
TWI441337B (zh) | 2014-06-11 |
CN102171831A (zh) | 2011-08-31 |
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