JP2011097062A5 - - Google Patents

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JP2011097062A5
JP2011097062A5 JP2010243863A JP2010243863A JP2011097062A5 JP 2011097062 A5 JP2011097062 A5 JP 2011097062A5 JP 2010243863 A JP2010243863 A JP 2010243863A JP 2010243863 A JP2010243863 A JP 2010243863A JP 2011097062 A5 JP2011097062 A5 JP 2011097062A5
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semiconductor substrate
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JP2010243863A
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JP5396369B2 (ja
JP2011097062A (ja
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Priority claimed from EP09174720.4A external-priority patent/EP2317542B1/en
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JP2010243863A 2009-10-30 2010-10-29 半導体基板構造および半導体素子 Active JP5396369B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP09174720.4A EP2317542B1 (en) 2009-10-30 2009-10-30 Semiconductor device and method of manufacturing thereof
EP09174720.4 2009-10-30
US26026809P 2009-11-11 2009-11-11
US61/260,268 2009-11-11

Publications (3)

Publication Number Publication Date
JP2011097062A JP2011097062A (ja) 2011-05-12
JP2011097062A5 true JP2011097062A5 (https=) 2013-06-27
JP5396369B2 JP5396369B2 (ja) 2014-01-22

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JP2010243863A Active JP5396369B2 (ja) 2009-10-30 2010-10-29 半導体基板構造および半導体素子

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US (2) US8373204B2 (https=)
EP (1) EP2317542B1 (https=)
JP (1) JP5396369B2 (https=)

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US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
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US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US20140077266A1 (en) * 2012-09-14 2014-03-20 Power Integrations, Inc. Heterostructure Transistor with Multiple Gate Dielectric Layers
DE102012217073B4 (de) 2012-09-21 2024-11-28 Robert Bosch Gmbh Vertikales mikroelektronisches Bauelement
KR20140083591A (ko) * 2012-12-26 2014-07-04 에스케이하이닉스 주식회사 반도체 장치 제조 방법
CN103117294B (zh) 2013-02-07 2015-11-25 苏州晶湛半导体有限公司 氮化物高压器件及其制造方法
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US10381473B2 (en) 2016-12-02 2019-08-13 Vishay-Siliconix High-electron-mobility transistor with buried interconnect
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US10833063B2 (en) 2018-07-25 2020-11-10 Vishay SIliconix, LLC High electron mobility transistor ESD protection structures
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US20220139709A1 (en) * 2020-11-05 2022-05-05 International Business Machines Corporation Confined gallium nitride epitaxial layers
US20220376059A1 (en) * 2020-12-28 2022-11-24 Innoscience (suzhou) Semiconductor Co., Ltd. Semiconductor device structures and methods of manufacturing the same
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