JP5396369B2 - 半導体基板構造および半導体素子 - Google Patents

半導体基板構造および半導体素子 Download PDF

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JP5396369B2
JP5396369B2 JP2010243863A JP2010243863A JP5396369B2 JP 5396369 B2 JP5396369 B2 JP 5396369B2 JP 2010243863 A JP2010243863 A JP 2010243863A JP 2010243863 A JP2010243863 A JP 2010243863A JP 5396369 B2 JP5396369 B2 JP 5396369B2
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JP2011097062A5 (https=
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チェン・カイ
ステファン・デフローテ
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Interuniversitair Microelektronica Centrum vzw IMEC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

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JP2010243863A 2009-10-30 2010-10-29 半導体基板構造および半導体素子 Active JP5396369B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP09174720.4A EP2317542B1 (en) 2009-10-30 2009-10-30 Semiconductor device and method of manufacturing thereof
EP09174720.4 2009-10-30
US26026809P 2009-11-11 2009-11-11
US61/260,268 2009-11-11

Publications (3)

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JP2011097062A JP2011097062A (ja) 2011-05-12
JP2011097062A5 JP2011097062A5 (https=) 2013-06-27
JP5396369B2 true JP5396369B2 (ja) 2014-01-22

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US (2) US8373204B2 (https=)
EP (1) EP2317542B1 (https=)
JP (1) JP5396369B2 (https=)

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WO2023090019A1 (ja) 2021-11-17 2023-05-25 信越半導体株式会社 窒化物半導体基板及び窒化物半導体基板の製造方法

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US9245760B2 (en) * 2010-09-30 2016-01-26 Infineon Technologies Ag Methods of forming epitaxial layers on a porous semiconductor layer
US8835986B2 (en) * 2011-06-22 2014-09-16 Imec Method for fabrication of III-nitride device and the III-nitride device thereof
KR20130035024A (ko) * 2011-09-29 2013-04-08 삼성전자주식회사 고 전자 이동도 트랜지스터 및 그 제조방법
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US20130143392A1 (en) * 2011-12-06 2013-06-06 Epowersoft, Inc. In-situ sin growth to enable schottky contact for gan devices
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US20140077266A1 (en) * 2012-09-14 2014-03-20 Power Integrations, Inc. Heterostructure Transistor with Multiple Gate Dielectric Layers
DE102012217073B4 (de) 2012-09-21 2024-11-28 Robert Bosch Gmbh Vertikales mikroelektronisches Bauelement
KR20140083591A (ko) * 2012-12-26 2014-07-04 에스케이하이닉스 주식회사 반도체 장치 제조 방법
CN103117294B (zh) 2013-02-07 2015-11-25 苏州晶湛半导体有限公司 氮化物高压器件及其制造方法
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
DE102013210814A1 (de) 2013-06-10 2014-12-11 Robert Bosch Gmbh Verfahren zum Herstellen eines Transistors mit hoher Elektronenbeweglichkeit
US9368584B2 (en) 2013-07-09 2016-06-14 Vishay General Semiconductor Llc Gallium nitride power semiconductor device having a vertical structure
US9425312B2 (en) 2014-06-23 2016-08-23 International Business Machines Corporation Silicon-containing, tunneling field-effect transistor including III-N source
US9640620B2 (en) * 2014-11-03 2017-05-02 Texas Instruments Incorporated High power transistor with oxide gate barriers
JP6520197B2 (ja) * 2015-02-20 2019-05-29 富士通株式会社 化合物半導体装置及びその製造方法
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CN112242442B (zh) * 2019-07-16 2024-06-11 世界先进积体电路股份有限公司 半导体结构及其形成方法
CN112993005B (zh) * 2019-12-02 2024-01-09 联华电子股份有限公司 具有平台结构的半导体元件及其制作方法
US20220139709A1 (en) * 2020-11-05 2022-05-05 International Business Machines Corporation Confined gallium nitride epitaxial layers
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US8580626B2 (en) 2013-11-12
US8373204B2 (en) 2013-02-12
EP2317542B1 (en) 2018-05-23
JP2011097062A (ja) 2011-05-12
US20130203221A1 (en) 2013-08-08
EP2317542A1 (en) 2011-05-04
US20110101370A1 (en) 2011-05-05

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