JP2017055053A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 150000004767 nitrides Chemical class 0.000 claims abstract description 16
- 229910002704 AlGaN Inorganic materials 0.000 claims description 45
- 238000003475 lamination Methods 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 118
- 229910002601 GaN Inorganic materials 0.000 abstract description 114
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- 239000001257 hydrogen Substances 0.000 description 10
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- 230000015572 biosynthetic process Effects 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
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- 238000010438 heat treatment Methods 0.000 description 4
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- 239000011777 magnesium Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910004541 SiN Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 238000004904 shortening Methods 0.000 description 1
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- 229910052717 sulfur Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
Description
Claims (6)
- 基板と、
前記基板の第1面の上方に設けられ、第1導電型の窒化物半導体層を含む第1層と、
前記第1層上に設けられ、Alを含有する第1導電型の窒化物半導体層を含む第2層と、
前記第2層の上面のうち第1領域に設けられた絶縁膜と、
前記第2層の上面のうち第2領域に設けられ、第2導電型の窒化膜半導体層を含む第3層であって、前記第2層と前記第3層の積層方向の断面において、前記第2層上に設けられ前記第2領域の幅とほぼ等しい幅を有する第1部分と、前記第1部分上に設けられ前記第2領域の幅および前記第1部分の幅よりも広い幅を有する第2部分とを有する第3層と、
前記第3層の前記第2部分上に設けられた電極とを備えた半導体装置。 - 前記第1部分は、前記絶縁膜の厚みとほぼ同じ厚みを有し、
前記第2部分は、前記第1部分および該第1部分に隣接する前記絶縁膜の上に設けられている、請求項1に記載の半導体装置。 - 前記第2層と前記第3層の積層方向の断面において、前記電極は、前記第2領域の幅および前記第1部分の幅よりも広い幅を有する、請求項1または請求項2に記載の半導体装置。
- 前記第2層と前記第3層の積層方向の断面において、前記第3層は、略T形状を有する、請求項1から請求項3のいずれか一項に記載の半導体装置。
- 前記第1層はn型GaN層であり、
前記第2層はn型AlGaN層であり、
前記第3層はp型GaN層である、請求項1から請求項4のいずれか一項に記載の半導体装置。 - 基板の第1面の上方に第1導電型の窒化物半導体層を用いて第1層を形成し、
前記第1層上に、Alを含有する第1導電型の窒化物半導体層を用いて第2層を形成し、
前記第2層の上面のうち第1領域上に絶縁膜を形成し、
前記第2層の上面のうち前記絶縁膜が形成されていない第2領域上に第2導電型の窒化膜半導体層を選択的にエピタキシャル成長させて第3層を形成し、
前記第3層上に電極を形成することを具備する半導体装置の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2015179704A JP2017055053A (ja) | 2015-09-11 | 2015-09-11 | 半導体装置および半導体装置の製造方法 |
US15/062,209 US20170077280A1 (en) | 2015-09-11 | 2016-03-07 | Semiconductor device and method of manufacturing a semiconductor device |
TW105107391A TW201711141A (zh) | 2015-09-11 | 2016-03-10 | 半導體裝置及半導體裝置之製造方法 |
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JP2015179704A JP2017055053A (ja) | 2015-09-11 | 2015-09-11 | 半導体装置および半導体装置の製造方法 |
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JP2015179704A Pending JP2017055053A (ja) | 2015-09-11 | 2015-09-11 | 半導体装置および半導体装置の製造方法 |
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US (1) | US20170077280A1 (ja) |
JP (1) | JP2017055053A (ja) |
TW (1) | TW201711141A (ja) |
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TWI692870B (zh) * | 2017-07-18 | 2020-05-01 | 世界先進積體電路股份有限公司 | 半導體裝置及其製造方法 |
US10998434B2 (en) | 2017-12-22 | 2021-05-04 | Vanguard International Semiconductor Corporation | Semiconductor device and method for forming the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08274115A (ja) * | 1995-03-31 | 1996-10-18 | Nec Corp | 接合型電界効果トランジスタ及びその製造方法 |
US20070164314A1 (en) * | 2005-12-30 | 2007-07-19 | Robert Beach | Nitrogen polar III-nitride heterojunction JFET |
JP2007220895A (ja) * | 2006-02-16 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 窒化物半導体装置およびその製造方法 |
WO2012172753A1 (ja) * | 2011-06-13 | 2012-12-20 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP2015149324A (ja) * | 2014-02-05 | 2015-08-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2015
- 2015-09-11 JP JP2015179704A patent/JP2017055053A/ja active Pending
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2016
- 2016-03-07 US US15/062,209 patent/US20170077280A1/en not_active Abandoned
- 2016-03-10 TW TW105107391A patent/TW201711141A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08274115A (ja) * | 1995-03-31 | 1996-10-18 | Nec Corp | 接合型電界効果トランジスタ及びその製造方法 |
US20070164314A1 (en) * | 2005-12-30 | 2007-07-19 | Robert Beach | Nitrogen polar III-nitride heterojunction JFET |
JP2007220895A (ja) * | 2006-02-16 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 窒化物半導体装置およびその製造方法 |
WO2012172753A1 (ja) * | 2011-06-13 | 2012-12-20 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP2015149324A (ja) * | 2014-02-05 | 2015-08-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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TW201711141A (zh) | 2017-03-16 |
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