JPWO2024042814A5 - - Google Patents

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Publication number
JPWO2024042814A5
JPWO2024042814A5 JP2024542598A JP2024542598A JPWO2024042814A5 JP WO2024042814 A5 JPWO2024042814 A5 JP WO2024042814A5 JP 2024542598 A JP2024542598 A JP 2024542598A JP 2024542598 A JP2024542598 A JP 2024542598A JP WO2024042814 A5 JPWO2024042814 A5 JP WO2024042814A5
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JP
Japan
Prior art keywords
layer
insulating film
contact
gate insulating
current spreading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024542598A
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English (en)
Japanese (ja)
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JP7772236B2 (ja
JPWO2024042814A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/021200 external-priority patent/WO2024042814A1/ja
Publication of JPWO2024042814A1 publication Critical patent/JPWO2024042814A1/ja
Publication of JPWO2024042814A5 publication Critical patent/JPWO2024042814A5/ja
Priority to JP2025155188A priority Critical patent/JP2025176181A/ja
Application granted granted Critical
Publication of JP7772236B2 publication Critical patent/JP7772236B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2024542598A 2022-08-26 2023-06-07 電界効果トランジスタ Active JP7772236B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025155188A JP2025176181A (ja) 2022-08-26 2025-09-18 電界効果トランジスタ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022135237 2022-08-26
JP2022135237 2022-08-26
PCT/JP2023/021200 WO2024042814A1 (ja) 2022-08-26 2023-06-07 電界効果トランジスタ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025155188A Division JP2025176181A (ja) 2022-08-26 2025-09-18 電界効果トランジスタ

Publications (3)

Publication Number Publication Date
JPWO2024042814A1 JPWO2024042814A1 (https=) 2024-02-29
JPWO2024042814A5 true JPWO2024042814A5 (https=) 2024-09-20
JP7772236B2 JP7772236B2 (ja) 2025-11-18

Family

ID=90012970

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2024542598A Active JP7772236B2 (ja) 2022-08-26 2023-06-07 電界効果トランジスタ
JP2025155188A Pending JP2025176181A (ja) 2022-08-26 2025-09-18 電界効果トランジスタ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025155188A Pending JP2025176181A (ja) 2022-08-26 2025-09-18 電界効果トランジスタ

Country Status (5)

Country Link
US (1) US20250089293A1 (https=)
EP (1) EP4579759A4 (https=)
JP (2) JP7772236B2 (https=)
CN (1) CN119234316A (https=)
WO (1) WO2024042814A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025183962A1 (en) * 2024-03-01 2025-09-04 Semiconductor Components Industries, Llc Electronic device including a buried shield and a gap region

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008016747A (ja) * 2006-07-10 2008-01-24 Fuji Electric Holdings Co Ltd トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法
JP4450241B2 (ja) 2007-03-20 2010-04-14 株式会社デンソー 炭化珪素半導体装置の製造方法
JP5531787B2 (ja) * 2010-05-31 2014-06-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6952826B2 (ja) * 2016-10-31 2021-10-27 株式会社東芝 半導体装置及びその製造方法
JP6991476B2 (ja) * 2017-05-31 2022-01-12 国立研究開発法人産業技術総合研究所 半導体装置
DE112018002873T5 (de) * 2017-06-06 2020-02-27 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandler
JP7059556B2 (ja) * 2017-10-05 2022-04-26 富士電機株式会社 半導体装置
JP7196463B2 (ja) * 2018-08-23 2022-12-27 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
US11942538B2 (en) * 2019-02-04 2024-03-26 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device
JP2021034526A (ja) * 2019-08-22 2021-03-01 株式会社デンソー スイッチング素子の製造方法
JP7459975B2 (ja) * 2020-12-24 2024-04-02 富士電機株式会社 絶縁ゲート型半導体装置

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