CN119234316A - 场效应晶体管 - Google Patents

场效应晶体管 Download PDF

Info

Publication number
CN119234316A
CN119234316A CN202380041413.1A CN202380041413A CN119234316A CN 119234316 A CN119234316 A CN 119234316A CN 202380041413 A CN202380041413 A CN 202380041413A CN 119234316 A CN119234316 A CN 119234316A
Authority
CN
China
Prior art keywords
layer
insulating film
gate insulating
current diffusion
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380041413.1A
Other languages
English (en)
Chinese (zh)
Inventor
高谷秀史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN119234316A publication Critical patent/CN119234316A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN202380041413.1A 2022-08-26 2023-06-07 场效应晶体管 Pending CN119234316A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022135237 2022-08-26
JP2022-135237 2022-08-26
PCT/JP2023/021200 WO2024042814A1 (ja) 2022-08-26 2023-06-07 電界効果トランジスタ

Publications (1)

Publication Number Publication Date
CN119234316A true CN119234316A (zh) 2024-12-31

Family

ID=90012970

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380041413.1A Pending CN119234316A (zh) 2022-08-26 2023-06-07 场效应晶体管

Country Status (5)

Country Link
US (1) US20250089293A1 (https=)
EP (1) EP4579759A4 (https=)
JP (2) JP7772236B2 (https=)
CN (1) CN119234316A (https=)
WO (1) WO2024042814A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025183962A1 (en) * 2024-03-01 2025-09-04 Semiconductor Components Industries, Llc Electronic device including a buried shield and a gap region

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008016747A (ja) * 2006-07-10 2008-01-24 Fuji Electric Holdings Co Ltd トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法
JP4450241B2 (ja) 2007-03-20 2010-04-14 株式会社デンソー 炭化珪素半導体装置の製造方法
JP5531787B2 (ja) * 2010-05-31 2014-06-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6952826B2 (ja) * 2016-10-31 2021-10-27 株式会社東芝 半導体装置及びその製造方法
JP6991476B2 (ja) * 2017-05-31 2022-01-12 国立研究開発法人産業技術総合研究所 半導体装置
DE112018002873T5 (de) * 2017-06-06 2020-02-27 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandler
JP7059556B2 (ja) * 2017-10-05 2022-04-26 富士電機株式会社 半導体装置
JP7196463B2 (ja) * 2018-08-23 2022-12-27 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
US11942538B2 (en) * 2019-02-04 2024-03-26 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device
JP2021034526A (ja) * 2019-08-22 2021-03-01 株式会社デンソー スイッチング素子の製造方法
JP7459975B2 (ja) * 2020-12-24 2024-04-02 富士電機株式会社 絶縁ゲート型半導体装置

Also Published As

Publication number Publication date
EP4579759A4 (en) 2025-12-03
JP2025176181A (ja) 2025-12-03
JP7772236B2 (ja) 2025-11-18
EP4579759A1 (en) 2025-07-02
JPWO2024042814A1 (https=) 2024-02-29
WO2024042814A1 (ja) 2024-02-29
US20250089293A1 (en) 2025-03-13

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